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FQU12N20TU

FQU12N20TU
Mfr. #:
FQU12N20TU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 200V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQU12N20TU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
9 A
Rds On - Drain-Source-Widerstand:
280 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
6.3 mm
Länge:
6.8 mm
Serie:
FQU12N20
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
2.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
7.3 S
Abfallzeit:
55 ns
Produktart:
MOSFET
Anstiegszeit:
120 ns
Werkspackungsmenge:
5040
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
FQU12N20TU_NL
Gewichtseinheit:
0.012102 oz
Tags
FQU12N2, FQU12, FQU1, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes |Onsemi FQU12N20TU
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Ch QFET Logic Level
***-Wing Technology
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -3.7 A, 1.4 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Teil # Mfg. Beschreibung Aktie Preis
FQU12N20TU
DISTI # FQU12N20TU-ND		ON SemiconductorMOSFET N-CH 200V 9A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5709
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.8019
  • 10:€0.7129
  • 25:€0.6409
  • 50:€0.5829
  • 100:€0.5339
  • 500:€0.4929
  • 1000:€0.4579
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.4429
  • 10080:$0.4399
  • 20160:$0.4349
  • 30240:$0.4289
  • 50400:$0.4179
FQU12N20TU
DISTI # 82C4388		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-251AA ROHS COMPLIANT: YES0
  • 10000:$0.5080
  • 2500:$0.5230
  • 1000:$0.6480
  • 500:$0.7420
  • 100:$0.8390
  • 10:$1.1000
  • 1:$1.2800
FQU12N20TU
DISTI # 512-FQU12N20TU		ON SemiconductorMOSFET 200V N-Channel QFET
RoHS: Compliant		3569
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9130
  • 500:$0.8070
  • 1000:$0.6370
  • 2500:$0.5650
  • 10000:$0.5440
FQU12N20TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		15120
  • 1000:$0.8200
  • 500:$0.8600
  • 100:$0.8900
  • 25:$0.9300
  • 1:$1.0000
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von FQU12N20TU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,10 $
1,10 $
10
0,94 $
9,44 $
100
0,72 $
72,50 $
500
0,64 $
320,50 $
1000
0,51 $
506,00 $
2500
0,45 $
1 120,00 $
10000
0,43 $
4 320,00 $
25000
0,42 $
10 450,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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