BC847BE6327HTSA1

Mfr. #:: BC847BE6327HTSA1
Hersteller:: Infineon Technologies
Beschreibung:: Bipolar Transistors - BJT NPN 45 V 100 mA
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BC847BE6327HTSA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Polarität des Transistors:: NPN

Aufbau:: Dual

Kollektor- Emitterspannung VCEO Max:: 45 V

Kollektor- Basisspannung VCBO:: 50 V

Emitter- Basisspannung VEBO:: 6 V

Kollektor-Emitter-Sättigungsspannung:: 200 mV

Maximaler DC-Kollektorstrom:: 200 mA

Bandbreitenprodukt fT gewinnen:: 250 MHz

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Serie:: BC847

DC-Stromverstärkung hFE Max:: 450

Verpackung:: Spule

Marke:: Infineon-Technologien

Kontinuierlicher Kollektorstrom:: 100 mA

DC-Kollektor/Basisverstärkung hfe Min:: 200

Pd - Verlustleistung:: 330 mW

Produktart:: BJTs - Bipolartransistoren

Qualifikation:: AEC-Q101

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Teil # Aliase:: 847B BC BC847BE6327XT E6327 SP000010559

Gewichtseinheit:: 0.000282 oz

Tags: BC847BE63, BC847BE6, BC847BE, BC847B, BC847, BC84, BC8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BC847BE6327HTSA1 Beschreibung

***ure Electronics: BC847 Series NPN 45 V 100 mA SMT Silicon AF Transistor - SOT-23-3

*** Electronic Components: Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

***icontronic: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

***ow.cn: Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

***ment14 APAC: Transistor, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:250MHz; Power

***ineon: NPN Silicon AF Transistors | Summary of Features: High current gain; Low collector-emitter saturation voltage; Low noise between 30 Hz and 15 kHz; Complementary types: BC857...-BC860...(PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q1011; BC847BL3 is not qualified according AEC Q101; 1BC847BL3 is not qualified according AEC Q101 | Target Applications: For AF input stages and driver applications

***trelec: Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 330 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900

***ure Electronics: DDTC Series NPN 50 V 100 mA 200 mW Pre-Biased Small Signal Transistor - SOT-23

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R

***i-Key: TRANS PREBIAS NPN 200MW SOT23-3

***ure Electronics: NPN 250 mW 50 V 100 mA Surface Mount Epitaxial Silicon Transistor - SOT-23-3

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel

***emi: NPN Epitaxial Silicon Transistor with Bias Resistor

***rchild Semiconductor: Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

***i-Key: TRANS PREBIAS NPN 200MW SOT23-3

***el Electronic: IC REG LINEAR 2.5V 1A 8HTSOP-J

***el Nordic: Contact for details

***et: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)

***inecomponents.com: NPN Epitaxial Silicon Transistor

***i-Key: TRANS PREBIAS NPN 200MW SOT23-3

***el Electronic: IC REG LINEAR 2.5V 1A 8HTSOP-J

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

***ure Electronics: DDTC Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3

***icontronic: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:4.7Kohm; Resistor Ratio, R1 / R2:1(Ratio); Msl:- Rohs Compliant: Yes

***ure Electronics: DDTC114CA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3

***p One Stop Global: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

***icontronic: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***(Formerly Allied Electronics): Trans Digital BJT NPN 100mA 3Pin SOT23 | Diodes Inc DDTC114ECA-7-F

***ark: Rf Transistor, 50V, 0.1A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DDTC114ECA-7-F

***itex: Transistor: NPN; bipolar; 32V; 0.5A; 350mW; -55+150 deg.C; SMD; SOT23

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans GP BJT NPN 32V 0.5A 3-Pin SOT-23 T/R

***ark: Transistor; Transistor Type:Bipolar; Package/Case:SOT-323; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:500mA; Voltage Rating:32V ;RoHS Compliant: Yes

***et: Trans GP BJT NPN 300V 0.2A 3-Pin SOT-23

***nell: TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 330mW; DC Collector Current: 200mA; DC Current Gain hFE: 25hFE; Transistor Case Styl

***ark: TRANSISTOR, NPN, SOT-23; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:300V; Current Ic Continuous a Max:200mA; Voltage, Vce Sat Max:0.5V; Power Dissipation:330mW; Min Hfe:40; ft, Typ:50MHz;;RoHS Compliant: Yes

*** Electronic Components: Bipolar Transistors - BJT SOT-23 PNP GP AMP

***ical: Trans GP BJT PNP 32V 0.5A 3-Pin SOT-23 T/R

***rchild Semiconductor: • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. • Sourced from Process 68.

***ure Electronics: MMBT3904 Series NPN 40 V 300 mW Surface Mount Small Signal Transistor - SOT-23

***el Electronic: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3

***ical: Trans GP BJT NPN 40V 0.2A 350mW 3-Pin SOT-23 T/R

***icontronic: Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN

*** Stop Electro: Small Signal Bipolar Transistors

*** Americas: STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'

***ark: Transistor,bjt,npn,30V V(Br)Ceo,100Ma I(C),to-236Aa Rohs Compliant: Yes

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

***el Electronic: Transistor (BJT) - Discrete ON Semiconductor BC848BMTF SOT 23-3

*** Electronic Components: Bipolar Transistors - BJT SOT-23 NPN GP AMP

***Yang: Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel

***et: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236)

*** Electronic Components: Bipolar Transistors - Pre-Biased PNP/50V/100mA/10K

***i-Key Marketplace: SMALL SIGNAL BIPOLAR TRANSISTOR

*** Electronics: TRANS PREBIAS PNP 200MW SOT23-3

***el Electronic: IC REG LINEAR 2.5V 500MA TO252-5

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***Yang: Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk

***emi: PNP Epitaxial Silicon Transistor with Bias Resistor

*** Electronic Components: Bipolar Transistors - Pre-Biased PNP/50V/100mA 4.7K 4.7K

***ark: Pre-Biased "Digital" Transistor,50V V(Br)Ceo,100Ma I(C),Sot-23

***th Star Micro: PNP Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KW, R2=4.7KW) Complement to FJV3101R

***rchild Semiconductor: Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

***-Wing Technology: Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 125 @ 2mA 5V 100mA 300mW 100MHz

***p One Stop Global: Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R

***S: French Electronic Distributor since 1988

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

***p One Stop Global: Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R

***ponent Stockers USA: 100 mA 30 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***inecomponents.com: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

***nell: TRANSISTOR, DIGITAL SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic Max: 100mA;

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BC847BE6327HTSA1 DISTI # V36:1790_06391317	Infineon Technologies AG	Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	144000	480000:$0.0145 240000:$0.0162 96000:$0.0171 48000:$0.0190
BC847BE6327HTSA1 DISTI # V72:2272_06391317	Infineon Technologies AG	Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	45470	30000:$0.0219 15000:$0.0223 6000:$0.0257 3000:$0.0275 1000:$0.0347 500:$0.0460 250:$0.0466 100:$0.0585 25:$0.1546 10:$0.1661 1:$0.1776
BC847BE6327HTSA1 DISTI # BC847BE6327HTSA1CT-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	62939In Stock	1000:$0.0399 500:$0.0585 100:$0.0951 10:$0.1750 1:$0.1900
BC847BE6327HTSA1 DISTI # BC847BE6327HTSA1DKR-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	62939In Stock	1000:$0.0399 500:$0.0585 100:$0.0951 10:$0.1750 1:$0.1900
BC847BE6327HTSA1 DISTI # BC847BE6327HTSA1TR-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	60000In Stock	150000:$0.0172 75000:$0.0207 30000:$0.0232 15000:$0.0258 6000:$0.0297 3000:$0.0329
BC847BE6327HTSA1 DISTI # 26573979	Infineon Technologies AG	Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	144000	48000:$0.0190
BC847BE6327HTSA1 DISTI # 32427924	Infineon Technologies AG	Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	45470	401:$0.1776
BC847BE6327HTSA1 DISTI # BC847BE6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BC847BE6327HTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 36000	30000:$0.0141 18000:$0.0144 12000:$0.0149 6000:$0.0154 3000:$0.0160
BC847BE6327HTSA1 DISTI # BC847BE6327HTSA1	Infineon Technologies AG	- Bulk (Alt: BC847BE6327HTSA1) RoHS: Compliant Min Qty: 25000 Container: Bulk	Americas - 0	250000:$0.0127 125000:$0.0129 75000:$0.0134 50000:$0.0139 25000:$0.0144
BC847BE6327HTSA1 DISTI # 47Y7985	Infineon Technologies AG	Bipolar (BJT) Single Transistor, NPN, 45 V, 250 MHz, 330 mW, 100 mA, 200 RoHS Compliant: Yes	0	1000:$0.0340 500:$0.0400 250:$0.0450 100:$0.0510 50:$0.0820 25:$0.1140 10:$0.1450 1:$0.1500
BC847BE6327XT DISTI # 726-BC847BE6327XT	Infineon Technologies AG	Bipolar Transistors - BJT NPN 45 V 100 mA RoHS: Compliant	37750	1:$0.1500 10:$0.1450 100:$0.0510 1000:$0.0340 3000:$0.0260 9000:$0.0230 24000:$0.0210 45000:$0.0180 99000:$0.0150
BC847BE6327HTSA1 DISTI # 726-BC847BE6327HTSA1	Infineon Technologies AG	Bipolar Transistors - BJT NPN 45 V 100 mA RoHS: Compliant	33414	1:$0.1700 10:$0.1590 100:$0.0560 1000:$0.0370 3000:$0.0290 9000:$0.0250 24000:$0.0230 45000:$0.0200 99000:$0.0170
BC 847B E6327 DISTI # 726-BC847BE6327	Infineon Technologies AG	Bipolar Transistors - BJT NPN 45 V 100 mA RoHS: Compliant	23019	1:$0.1500 10:$0.1450 100:$0.0510 1000:$0.0340 3000:$0.0260 9000:$0.0230 24000:$0.0210 45000:$0.0180
SP000010559 DISTI # 726-SP000010559	Infineon Technologies AG	Bipolar Transistors - BJT NPN 45 V 100 mA RoHS: Compliant	0
BC847BE6327HTSA1	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant	36000	100:$0.0100 500:$0.0100 1000:$0.0100 1:$0.0200 25:$0.0200
BC847BE6327HTSA1 DISTI # XSKDRABS0023658	Infineon Technologies AG	Bridge Rectifier Diode RoHS: Compliant	246000 in Stock0 on Order	246000:$0.0169 39000:$0.0181
BC847BE6327HTSA1 DISTI # XSKDRABV0044612	Infineon Technologies AG	RoHS: Compliant	54000 in Stock0 on Order	54000:$0.0187 36000:$0.0200
BC847BE6327HTSA1 DISTI # 2443459	Infineon Technologies AG	TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3 RoHS: Compliant	8785	45000:$0.0280 24000:$0.0330 9000:$0.0360 3000:$0.0400 1000:$0.0530 100:$0.0790 10:$0.2240 1:$0.2310
BC847BE6327HTSA1 DISTI # 2443459	Infineon Technologies AG	TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3 RoHS: Compliant	11545	500:£0.0390 250:£0.0411 100:£0.0433 25:£0.1250 5:£0.1270

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Verfügbarkeit

Aktie:: 33
Auf Bestellung:: 2016
Menge eingeben:

Der aktuelle Preis von BC847BE6327HTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,17 $~~; ~~0,17 $~~

10: ~~0,16 $~~; ~~1,59 $~~

100: ~~0,06 $~~; ~~5,60 $~~

1000: ~~0,04 $~~; ~~37,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BC847BE6327HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes