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SI4943BDY-T1-GE3

SI4943BDY-T1-GE3
Mfr. #:
SI4943BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V 8.4A 2.0W 19mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4943BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4943BDY-T1-GE3 DatasheetSI4943BDY-T1-GE3 Datasheet (P4-P6)SI4943BDY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI4943BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4943BDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4943BDY-T, SI4943B, SI4943, SI494, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-Channel 20V 6.3A 8-Pin SOIC N T/R
***nell
DUAL P CHANNEL MOSFET, -20V, 8.4A
***ment14 APAC
DUAL P CHANNEL MOSFET, -20V, 8.4A; Trans; DUAL P CHANNEL MOSFET, -20V, 8.4A; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-6.3A; Drain Source Voltage Vds, P Channel:-20V; On Resistance Rds(on), P Channel:0.016ohm; Rds(on) Test Voltage Vgs:-10V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4943BDY-T1-GE3
DISTI # SI4943BDY-T1-GE3-ND		Vishay SiliconixMOSFET 2P-CH 20V 6.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.9950
SI4943BDY-T1-GE3
DISTI # SI4943BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 6.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4943BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
    SI4943BDY-T1-GE3
    DISTI # 26R1900    		Vishay IntertechnologiesDUAL P CHANNEL MOSFET, -20V, 8.4A,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8.4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes0
      SI4943BDY-T1-GE3
      DISTI # 15R5133      		Vishay IntertechnologiesDUAL P CHANNEL MOSFET, -20V, 8.4A,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8.4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes0
        SI4943BDY-T1-GE3
        DISTI # 781-SI4943BDY-GE3        		Vishay IntertechnologiesMOSFET 20V 8.4A 2.0W 19mohm @ 10V
        RoHS: Compliant        		0
        • 1:$2.0900
        • 10:$1.7300
        • 100:$1.3400
        • 500:$1.1800
        • 1000:$0.9720
        • 2500:$0.9050
        • 5000:$0.8720
        Bild Teil # Beschreibung
        SI4943BDY-T1-E3

        Mfr.#: SI4943BDY-T1-E3

        OMO.#: OMO-SI4943BDY-T1-E3

        		 MOSFET 20V 8.4A 2W
        SI4943BDY-T1-GE3

        Mfr.#: SI4943BDY-T1-GE3

        OMO.#: OMO-SI4943BDY-T1-GE3

        		 MOSFET 20V 8.4A 2.0W 19mohm @ 10V
        SI4943BDY-T1-GE3

        Mfr.#: SI4943BDY-T1-GE3

        OMO.#: OMO-SI4943BDY-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 20V 8.4A 2.0W 19mohm @ 10V
        SI4943BDY-T1-E3-CUT TAPE

        Mfr.#: SI4943BDY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4943BDY-T1-E3-CUT-TAPE-1190

        		 Neu und Original
        SI4943BDY

        Mfr.#: SI4943BDY

        OMO.#: OMO-SI4943BDY-1190

        		 Neu und Original
        SI4943BDY(R301)

        Mfr.#: SI4943BDY(R301)

        OMO.#: OMO-SI4943BDY-R301--1190

        		 Neu und Original
        SI4943BDY-T1-E3

        Mfr.#: SI4943BDY-T1-E3

        OMO.#: OMO-SI4943BDY-T1-E3-VISHAY

        		 MOSFET 2P-CH 20V 6.3A 8-SOIC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von SI4943BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,08 $
        2,08 $
        10
        1,73 $
        17,30 $
        100
        1,34 $
        134,00 $
        500
        1,17 $
        585,00 $
        1000
        0,97 $
        972,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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