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SIRC04DP-T1-GE3

SIRC04DP-T1-GE3
Mfr. #:
SIRC04DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 60A POWERPAKSO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRC04DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIRC04DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIRC0, SIRC, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.00205Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:50W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 30V, 60A, 150°C, 50W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.00205ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.1V; Dissipazione di Potenza Pd:50W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.7316
  • 3000:$0.7598
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.8405
  • 500:$1.0144
  • 100:$1.2347
  • 10:$1.5360
  • 1:$1.7100
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.8405
  • 500:$1.0144
  • 100:$1.2347
  • 10:$1.5360
  • 1:$1.7100
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC04DP-T1-GE3)
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.6869
  • 30000:$0.7059
  • 18000:$0.7259
  • 12000:$0.7569
  • 6000:$0.7799
SIRC04DP-T1-GE3
DISTI # 81AC2785		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00205ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes6050
  • 500:$0.9480
  • 250:$1.0100
  • 100:$1.0800
  • 50:$1.1900
  • 25:$1.2900
  • 10:$1.3900
  • 1:$1.6800
SIRC04DP-T1-GE3
DISTI # 59AC7426		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.6700
  • 6000:$0.6970
  • 4000:$0.7240
  • 2000:$0.8040
  • 1000:$0.8470
  • 1:$0.9010
SIRC04DP-T1-GE3
DISTI # 78-SIRC04DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		5996
  • 1:$1.6600
  • 10:$1.3800
  • 100:$1.0700
  • 500:$0.9390
  • 1000:$0.7780
  • 3000:$0.7240
  • 6000:$0.6970
SIRC04DP-T1-GE3
DISTI # 2932950		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W6050
  • 500:£0.6800
  • 250:£0.7280
  • 100:£0.7750
  • 10:£1.0500
  • 1:£1.3700
SIRC04DP-T1-GE3
DISTI # 2932950		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W
RoHS: Compliant		6050
  • 1000:$1.2200
  • 500:$1.2800
  • 250:$1.5100
  • 100:$1.8300
  • 10:$2.3300
  • 1:$2.8200
Bild Teil # Beschreibung
SIRC04DP-T1-GE3

Mfr.#: SIRC04DP-T1-GE3

OMO.#: OMO-SIRC04DP-T1-GE3

 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRC04DP

Mfr.#: SIRC04DP

OMO.#: OMO-SIRC04DP-1190

 Neu und Original
SIRC04DP-T1-GE3

Mfr.#: SIRC04DP-T1-GE3

OMO.#: OMO-SIRC04DP-T1-GE3-VISHAY

 MOSFET N-CH 30V 60A POWERPAKSO-8
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von SIRC04DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,00 $
1,00 $
10
0,95 $
9,55 $
100
0,90 $
90,45 $
500
0,85 $
427,15 $
1000
0,80 $
804,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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