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PMST5550,135

PMST5550,135
Mfr. #:
PMST5550,135
Hersteller:
Nexperia
Beschreibung:
Bipolar Transistors - BJT TRANS HV TAPE-11
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PMST5550,135 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PMST5550,135 DatasheetPMST5550,135 Datasheet (P4-P6)PMST5550,135 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOT-323-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
140 V
Kollektor- Basisspannung VCBO:
160 V
Emitter- Basisspannung VEBO:
6 V
Maximaler DC-Kollektorstrom:
0.3 A
Bandbreitenprodukt fT gewinnen:
300 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
DC-Stromverstärkung hFE Max:
60 at 1 mA, 5 V
Höhe:
1 mm
Länge:
2.2 mm
Verpackung:
Spule
Breite:
1.35 mm
Marke:
Nexperia
DC-Kollektor/Basisverstärkung hfe Min:
60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V
Pd - Verlustleistung:
200 mW
Produktart:
BJTs - Bipolartransistoren
Qualifikation:
AEC-Q101
Werkspackungsmenge:
10000
Unterkategorie:
Transistoren
Teil # Aliase:
/T3 PMST5550
Gewichtseinheit:
0.000176 oz
Tags
PMST5550, PMST55, PMST5, PMST, PMS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans GP BJT NPN 140V 0.3A 3-Pin SC-70 T/R
***peria
PMST5550 - NPN high-voltage transistor
***ponent Stockers USA
300 mA 140 V NPN Si SMALL SIGNAL TRANSISTOR
***enic
140V 200mW 300mA 60@10mA5V 100MHz 250mV@50mA5mA NPN +150¡Í@(Tj) SOT-323 Bipolar Transistors - BJT ROHS
***ark
Transistor, Bipolar Rohs Compliant: Yes
***SIT Distribution GmbH
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
DTC143ZUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
***ark
Transistor; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:-; Rf Rohs Compliant: Yes
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
DTC114EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
***ical
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R
***ark
Transistor, Digital; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:-; Rfrohs Compliant: Yes
***nell
TRANSISTOR, DIGITAL; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC114E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
*** Source Electronics
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R / TRANS PREBIAS NPN 200MW UMT3
***ure Electronics
DTC123EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
***ark
Transistor, Rf, Npn, 50V, 250Mhz, Sot-323-3
***ment14 APAC
Transistor, DIGITAL;UMT;NPN; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;
***nell
TRANSISTOR, DIGITAL;UMT;NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 2.2kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC123E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 20hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 20; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***r Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
***ical
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R
***ark
BIPOLAR TRANSISTOR, NPN, 20V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:20V; Power Dissipation, Pd:200mW; Collector Emitter Saturation Voltage, Vce(sat):0.4V; Continuous Collector Current, Ic:0.5A ;RoHS Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R - Tape and Reel
***ark
BIPOLAR TRANSISTOR, NPN, 20V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:20V; Power Dissipation, Pd:200mW; DC Collector Current:500mA; DC Current Gain Max (hfe):200 ;RoHS Compliant: Yes
***ical
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 0.1W USM
*** Europe
NPN TRANSIST ARRAY 50V USM
Teil # Mfg. Beschreibung Aktie Preis
PMST5550,135
DISTI # PMST5550,135-ND		NexperiaTRANS NPN 140V 0.3A SOT323
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.0357
PMST5550,135
DISTI # PMST5550,135		NexperiaTrans GP BJT NPN 140V 0.3A 3-Pin SC-70 T/R - Tape and Reel (Alt: PMST5550,135)
RoHS: Compliant
Min Qty: 40000
Container: Reel		Americas - 0
  • 40000:$0.0263
  • 60000:$0.0260
  • 100000:$0.0253
  • 200000:$0.0247
  • 400000:$0.0241
PMST5550135NXP SemiconductorsNow Nexperia PMST5550 - Small Signal Bipolar Transistor, 0.3A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon
RoHS: Not Compliant		20000
  • 1:$0.0300
  • 25:$0.0300
  • 100:$0.0300
  • 500:$0.0300
  • 1000:$0.0300
PMST5550,135
DISTI # 771-PMST5550135		NexperiaBipolar Transistors - BJT TRANS HV TAPE-11
RoHS: Compliant		9627
  • 1:$0.2700
  • 10:$0.1800
  • 100:$0.0750
  • 1000:$0.0520
  • 2500:$0.0400
  • 10000:$0.0350
PMST5550,115
DISTI # 771-PMST5550115		NexperiaBipolar Transistors - BJT TRANS HV TAPE-7
RoHS: Compliant		8292
  • 1:$0.3500
  • 10:$0.2240
  • 100:$0.0960
  • 1000:$0.0740
  • 3000:$0.0560
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von PMST5550,135 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,26 $
0,26 $
10
0,18 $
1,80 $
100
0,08 $
7,50 $
1000
0,05 $
52,00 $
2500
0,04 $
100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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