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SIHB28N60EF-GE3

SIHB28N60EF-GE3
Mfr. #:
SIHB28N60EF-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB28N60EF-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB28N60EF-GE3 DatasheetSIHB28N60EF-GE3 Datasheet (P4-P6)SIHB28N60EF-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHB28N60EF-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Verpackung:
Schüttgut
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
EF
Breite:
9.65 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.068654 oz
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***v
    V***v
    RU

    Good seller, good price. I recommend everyone.

    2019-06-14
    D***v
    D***v
    UA

    All oK!

    2019-04-23
    R***k
    R***k
    PL

    ok

    2019-06-26
    R***i
    R***i
    BG

    OK

    2019-03-25
***et Europe
Trans MOSFET N-CH 600V 28A 3-Pin D2PAK T/R
***ure Electronics
600V, 28A, 0.123 OHM, D2PAK EF SERIES
***
N-CH 600V T0-263
***ark
N-CHANNEL 600V
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Teil # Mfg. Beschreibung Aktie Preis
SIHB28N60EF-GE3
DISTI # SIHB28N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 28A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$3.4342
SIHB28N60EF-GE3
DISTI # SIHB28N60EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 28A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB28N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.1900
  • 2000:$3.0900
  • 4000:$2.9900
  • 6000:$2.8900
  • 10000:$2.7900
SIHB28N60EF-GE3
DISTI # 78-SIHB28N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		122
  • 1:$6.2500
  • 10:$5.1800
  • 100:$4.2600
  • 250:$4.1300
  • 500:$3.7300
  • 1000:$3.7200
SIHB28N60EF-GE3
DISTI # 9034504P		Vishay IntertechnologiesMOSFET 600V 28A W/FAST DIODE D2PAK, TU796
  • 20:£1.7300
SIHB28N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    BC807-16LT1G

    Mfr.#: BC807-16LT1G

    OMO.#: OMO-BC807-16LT1G

    		 Bipolar Transistors - BJT 500mA 50V PNP
    1SMA5932BT3G

    Mfr.#: 1SMA5932BT3G

    OMO.#: OMO-1SMA5932BT3G

    		 Zener Diodes 20V 1.5W
    S8MC-13

    Mfr.#: S8MC-13

    OMO.#: OMO-S8MC-13

    		 Rectifiers 8.0A 1000V
    DNFR18-250FIB-M

    Mfr.#: DNFR18-250FIB-M

    OMO.#: OMO-DNFR18-250FIB-M

    		 Terminals Female Disc R/A NYL fully insulated
    1SMA5932BT3G

    Mfr.#: 1SMA5932BT3G

    OMO.#: OMO-1SMA5932BT3G-ON-SEMICONDUCTOR

    		 Zener Diodes 20V 1.5W
    TAJA225K025RNJ

    Mfr.#: TAJA225K025RNJ

    OMO.#: OMO-TAJA225K025RNJ-AVX

    		 Tantalum Capacitors - Solid SMD 25volts 2.2uF 10%
    1-480305-0

    Mfr.#: 1-480305-0

    OMO.#: OMO-1-480305-0-TE-CONNECTIVITY

    		 Power to the Board PIN PANEL 3 CIRCUITS
    DNFR18-250FIB-M

    Mfr.#: DNFR18-250FIB-M

    OMO.#: OMO-DNFR18-250FIB-M-PANDUIT

    		 Terminals Female Disc R/A NYL fully insulated
    LRC-LRZ2512LF-R000

    Mfr.#: LRC-LRZ2512LF-R000

    OMO.#: OMO-LRC-LRZ2512LF-R000-1085

    		 Current Sense Resistors - SMD 2512 0 OHM JUMPER
    BC807-16LT1G

    Mfr.#: BC807-16LT1G

    OMO.#: OMO-BC807-16LT1G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT 500mA 50V PNP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von SIHB28N60EF-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,24 $
    6,24 $
    10
    5,17 $
    51,70 $
    100
    4,25 $
    425,00 $
    250
    4,12 $
    1 030,00 $
    500
    3,70 $
    1 850,00 $
    1000
    3,12 $
    3 120,00 $
    2000
    2,96 $
    5 920,00 $
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