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SI2306BDS-T1-GE3

SI2306BDS-T1-GE3
Mfr. #:
SI2306BDS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2306BDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2306BDS-T1-GE3 DatasheetSI2306BDS-T1-GE3 Datasheet (P4-P6)SI2306BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI2306BDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI2
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI2306BDS-GE3
Gewichtseinheit:
0.000282 oz
Tags
SI2306BDS-T1, SI2306BDS-T, SI2306B, SI2306, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
***ronik
N-CHANNEL-FET 4A 30V SOT23 RoHSconf
***ment14 APAC
N CHANNEL MOSFET, 30V, 4A, TO-236; Trans; N CHANNEL MOSFET, 30V, 4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2306BDS-T1-GE3
DISTI # V72:2272_09216787		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		2468
  • 1000:$0.2567
  • 500:$0.3246
  • 250:$0.3731
  • 100:$0.4146
  • 25:$0.5007
  • 10:$0.6120
  • 1:$0.7921
SI2306BDS-T1-GE3
DISTI # V36:1790_09216787		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.2127
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3520In Stock
  • 1000:$0.2390
  • 500:$0.3093
  • 100:$0.3937
  • 10:$0.5270
  • 1:$0.6200
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3520In Stock
  • 1000:$0.2390
  • 500:$0.3093
  • 100:$0.3937
  • 10:$0.5270
  • 1:$0.6200
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1747
  • 15000:$0.1843
  • 6000:$0.1979
  • 3000:$0.2116
SI2306BDS-T1-GE3
DISTI # 32400643		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1770
SI2306BDS-T1-GE3
DISTI # 33599494		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 327:$0.2354
SI2306BDS-T1-GE3
DISTI # 31084367		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		2468
  • 39:$0.7921
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1729
  • 18000:€0.1859
  • 12000:€0.2009
  • 6000:€0.2339
  • 3000:€0.3429
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2306BDS-T1-GE3
    DISTI # SI2306BDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1659
    • 18000:$0.1709
    • 12000:$0.1759
    • 6000:$0.1829
    • 3000:$0.1889
    SI2306BDS-T1-GE3
    DISTI # 16P3706    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 16P3706)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$0.2220
    • 500:$0.2870
    • 250:$0.3180
    • 100:$0.3490
    • 50:$0.4100
    • 25:$0.4700
    • 1:$0.6200
    SI2306BDS-T1-GE3
    DISTI # 16P3706    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 4A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes3000
    • 1:$0.1530
    • 25:$0.1530
    • 50:$0.1530
    • 100:$0.1530
    • 250:$0.1530
    • 500:$0.1530
    • 1000:$0.1530
    SI2306BDS-T1-GE3.
    DISTI # 30AC0137    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1660
    • 18000:$0.1710
    • 12000:$0.1760
    • 6000:$0.1830
    • 1:$0.1890
    SI2306BDS-T1-GE3
    DISTI # 781-SI2306BDS-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
    RoHS: Compliant    		8400
    • 1:$0.6100
    • 10:$0.4690
    • 100:$0.3480
    • 500:$0.2860
    • 1000:$0.2210
    • 3000:$0.2010
    • 6000:$0.1880
    • 9000:$0.1750
    SI2306BDS-T1-GE3Vishay Intertechnologies 9000
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1991
      Menge eingeben:
      Der aktuelle Preis von SI2306BDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,61 $
      0,61 $
      10
      0,47 $
      4,69 $
      100
      0,35 $
      34,80 $
      500
      0,29 $
      143,00 $
      1000
      0,22 $
      221,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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