AOK40N30L

AOK40N30L
Mfr. #:
AOK40N30L
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
MOSFET N-CH 300V 40A TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOK40N30L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOK40N30L DatasheetAOK40N30L Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOK40, AOK4, AOK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 300V 40A TO247
***el Electronic
IC REG BUCK ADJ 8A SYNC 28HTSSOP
***icroelectronics
N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a TO-247 package
***r Electronics
Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 300V 42A Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
Automotive Q101 300V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
***ical
Trans MOSFET N-CH 300V 38A Automotive 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
MOSFET Auto Q101 300V SGL N-CH HEXFET
***ineon
Target Applications: HV DC-DC Converter
***emi
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
***ark
Mosfet, N Channel, 650V, 44A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 44A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
***el Electronic
INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
***roFlash
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ure Electronics
Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC
***nell
MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Teil # Mfg. Beschreibung Aktie Preis
AOK40N30L
DISTI # V36:1790_07841675
Alpha & Omega SemiconductorTrans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247
RoHS: Compliant
0
  • 240000:$1.1390
  • 120000:$1.1420
  • 24000:$1.3830
  • 2400:$1.8090
  • 240:$1.8800
AOK40N30L
DISTI # 785-1447-5-ND
Alpha & Omega SemiconductorMOSFET N-CH 300V 40A TO247
RoHS: Compliant
Min Qty: 480
Container: Tube
Temporarily Out of Stock
  • 480:$1.8800
Bild Teil # Beschreibung
AOK40B120M1

Mfr.#: AOK40B120M1

OMO.#: OMO-AOK40B120M1-ALPHA-AND-OMEGA-SEMICONDUCTOR

IGBT 1200V 40A TO-247
AOK40B60D

Mfr.#: AOK40B60D

OMO.#: OMO-AOK40B60D-ALPHA-AND-OMEGA-SEMICONDUCTOR

IGBT 600V 80A 312.5W TO247
AOK40B60D1

Mfr.#: AOK40B60D1

OMO.#: OMO-AOK40B60D1-ALPHA-AND-OMEGA-SEMICONDUCTOR

IGBT 600V 80A 278W TO247
AOK40B60D1L

Mfr.#: AOK40B60D1L

OMO.#: OMO-AOK40B60D1L-1190

Neu und Original
AOK40B65H1

Mfr.#: AOK40B65H1

OMO.#: OMO-AOK40B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR

IGBT 650V 40A TO247
AOK40B65H2AL

Mfr.#: AOK40B65H2AL

OMO.#: OMO-AOK40B65H2AL-ALPHA-AND-OMEGA-SEMICONDUCTOR

IGBT 650V 40A TO-247
AOK40D120M

Mfr.#: AOK40D120M

OMO.#: OMO-AOK40D120M-1190

Neu und Original
AOK40N30L

Mfr.#: AOK40N30L

OMO.#: OMO-AOK40N30L-ALPHA-AND-OMEGA-SEMICONDUCTOR

MOSFET N-CH 300V 40A TO247
AOK42S60

Mfr.#: AOK42S60

OMO.#: OMO-AOK42S60-1190

Neu und Original
AOK431

Mfr.#: AOK431

OMO.#: OMO-AOK431-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von AOK40N30L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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