SI2312CDS-T1-GE3

Mfr. #:: SI2312CDS-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 20V Vds 8V Vgs SOT-23
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2312CDS-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2312CDS-T1-GE3 Datasheet SI2312CDS-T1-GE3 Datasheet (P4-P6)SI2312CDS-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:: SI2312CDS-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 6 A

Rds On - Drain-Source-Widerstand:: 31.8 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 450 mV

Vgs - Gate-Source-Spannung:: 4.5 V

Qg - Gate-Ladung:: 18 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2.1 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.45 mm

Länge:: 2.9 mm

Serie:: SI2

Transistortyp:: 1 N-Channel

Breite:: 1.6 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 24 S

Abfallzeit:: 8 ns

Produktart:: MOSFET

Anstiegszeit:: 17 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 31 ns

Typische Einschaltverzögerungszeit:: 8 ns

Teil # Aliase:: SI2312CDS-GE3 SI7621DN-T1-GE3

Gewichtseinheit:: 0.000282 oz

Tags: SI2312CDS-T1-G, SI2312CDS-T, SI2312C, SI2312, SI231, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2312CDS-T1-GE3 Beschreibung

***ure Electronics: Single N-Channel 20 V 31.8 mO 8.8 nC Surface Mount Mosfet - SOT-23

***itex: N-MOSFET transistor SI2312CDS-T1-GE3, SOT23, Vishay

*** Source Electronics: Trans MOSFET N-CH 20V 6A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 6A SOT-23

***ment14 APAC: MOSFET,N CH,20V,6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):26500µohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V

SI2312CDS-T1-GE3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2312CDS-T1-GE3 DISTI # V72:2272_07432214	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R RoHS: Compliant	20	10:$0.4293 1:$0.5117
SI2312CDS-T1-GE3 DISTI # V36:1790_07432214	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.1554 1500000:$0.1556 300000:$0.1609 30000:$0.1681 3000:$0.1692
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	31879In Stock	1000:$0.1747 500:$0.2260 100:$0.2877 10:$0.3850 1:$0.4500
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	31879In Stock	1000:$0.1747 500:$0.2260 100:$0.2877 10:$0.3850 1:$0.4500
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 6A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	30000In Stock	75000:$0.1263 30000:$0.1277 15000:$0.1347 6000:$0.1446 3000:$0.1546
SI2312CDS-T1-GE3 DISTI # 32889280	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R RoHS: Compliant	81000	3000:$0.1505
SI2312CDS-T1-GE3 DISTI # 32925432	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R RoHS: Compliant	9000	3000:$0.1350
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R (Alt: SI2312CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1209 18000:€0.1299 12000:€0.1409 6000:€0.1639 3000:€0.2399
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2312CDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1018 18000:$0.1046 12000:$0.1076 6000:$0.1121 3000:$0.1156
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R (Alt: SI2312CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2312CDS-T1-GE3 DISTI # 87W5911	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 87W5911) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.2030 500:$0.2630 250:$0.2910 100:$0.3190 50:$0.3740 25:$0.4290 1:$0.5630
SI2312CDS-T1-GE3 DISTI # 23T8496	Vishay Intertechnologies	MOSFET,N CH,20V,6A,DIODE,SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):26500µohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1.25W,Operating RoHS Compliant: Yes	5548	1000:$0.2050 500:$0.2650 250:$0.2940 100:$0.3230 50:$0.3780 25:$0.4330 1:$0.5690
SI2312CDS-T1-GE3 DISTI # 87W5911	Vishay Intertechnologies	MOSFET,N CHANNEL,20V,6A,DIODE,SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:450mV,MSL:- RoHS Compliant: Yes	1121	1000:$0.2050 500:$0.2650 250:$0.2940 100:$0.3230 50:$0.3780 25:$0.4330 1:$0.5690
SI2312CDS-T1-GE3. DISTI # 81AC9914	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET ROHS COMPLIANT: NO	3000	30000:$0.1020 18000:$0.1050 12000:$0.1080 6000:$0.1130 1:$0.1160
SI2312CDS-T1-GE3 DISTI # 70459671	Vishay Siliconix	MOSFET N-CH 20V 6A SOT-23 RoHS: Compliant	0	3000:$0.5720 6000:$0.4020
SI2312CDS-T1-GE3	Vishay Intertechnologies	Single N-Channel 20 V 31.8 mO 8.8 nC Surface Mount Mosfet - SOT-23 RoHS: Compliant	1960Cut Tape/Mini-Reel	1:$0.2400 100:$0.1590 250:$0.1460 500:$0.1370 1500:$0.1240
SI2312CDS-T1-GE3	Vishay Intertechnologies	Single N-Channel 20 V 31.8 mO 8.8 nC Surface Mount Mosfet - SOT-23 RoHS: Compliant	120000Reel	3000:$0.1120 6000:$0.1070
SI2312CDS-T1-GE3 DISTI # 781-SI2312CDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SOT-23 RoHS: Compliant	26520	1:$0.4500 10:$0.3430 100:$0.2550 500:$0.2100 1000:$0.1620
SI2312CDS-T1-GE3	Vishay Siliconix		1064
SI2312CDS-T1-GE3 DISTI # SI2312CDS-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,20V,5.1A,1.3W,SOT23	1466	500:$0.1995 100:$0.2221 25:$0.2514 5:$0.2796 1:$0.5591
SI2312CDS-T1-GE3 DISTI # 1858940RL	Vishay Intertechnologies	MOSFET,N CH,20V,6A,DIODE,SOT23 RoHS: Compliant	0	1000:$0.2620 500:$0.3390 100:$0.4310 10:$0.5760 1:$0.6700
SI2312CDS-T1-GE3 DISTI # 1858940	Vishay Intertechnologies	MOSFET,N CH,20V,6A,DIODE,SOT23 RoHS: Compliant	5488	1000:$0.2620 500:$0.3390 100:$0.4310 10:$0.5760 1:$0.6700
SI2312CDS-T1-GE3 DISTI # 1858940	Vishay Intertechnologies	MOSFET,N CH,20V,6A,DIODE,SOT23	56753	500:£0.1630 250:£0.1810 100:£0.1990 25:£0.2900 5:£0.3040
SI2312CDS-T1-GE3 DISTI # XSFP00000090652	Vishay Siliconix	RoHS: Compliant	97058 in Stock0 on Order	97058:$0.1493 3000:$0.1600
SI2312CDST1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	24000
SI2312CDS-T1-GE3 DISTI # TMOSS6497	Vishay Intertechnologies	N-CHANNEL-FET 5,6A 20V SOT23 RoHS: Compliant	Stock DE - 18000Stock HK - 0Stock US - 0	3000:$0.1821 6000:$0.1717 9000:$0.1612 12000:$0.1456 18000:$0.1404
SI2312CDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SOT-23 RoHS: Compliant	Americas - 246000	3000:$0.1200 6000:$0.1140 12000:$0.1100 18000:$0.1070
SI2312CDS-T1-GE3.	Vishay Intertechnologies	MOSFET 20V 6A N-CH MOSFET RoHS: Compliant	Americas - 5075	25:$0.2690 250:$0.2090

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Verfügbarkeit

Aktie:: 29
Auf Bestellung:: 2012
Menge eingeben:

Der aktuelle Preis von SI2312CDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,45 $~~; ~~0,45 $~~

10: ~~0,34 $~~; ~~3,43 $~~

100: ~~0,26 $~~; ~~25,50 $~~

500: ~~0,21 $~~; ~~105,00 $~~

1000: ~~0,16 $~~; ~~162,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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More Newest Products

SI2312CDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes