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SI7772DP-T1-GE3

SI7772DP-T1-GE3
Mfr. #:
SI7772DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7772DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7772DP-T1-GE3 DatasheetSI7772DP-T1-GE3 Datasheet (P4-P6)SI7772DP-T1-GE3 Datasheet (P7-P9)SI7772DP-T1-GE3 Datasheet (P10-P12)SI7772DP-T1-GE3 Datasheet (P13)
ECAD Model:
Mehr Informationen:
SI7772DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
35.6 A
Rds On - Drain-Source-Widerstand:
13 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
28 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
29.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
SI7
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
37 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
SI7772DP-GE3
Gewichtseinheit:
0.017870 oz
Tags
SI77, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):10500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.9A; Power Dissipation Pd:3.9W; Voltage Vgs Max:20V
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI7772DP-T1-GE3
DISTI # V72:2272_09215678		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		5930
  • 3000:$0.2938
  • 1000:$0.3135
  • 500:$0.3648
  • 250:$0.4058
  • 100:$0.4252
  • 25:$0.5137
  • 10:$0.5241
  • 1:$0.6158
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8242In Stock
  • 1000:$0.3716
  • 500:$0.4645
  • 100:$0.6271
  • 10:$0.8130
  • 1:$0.9300
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8242In Stock
  • 1000:$0.3716
  • 500:$0.4645
  • 100:$0.6271
  • 10:$0.8130
  • 1:$0.9300
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.3270
SI7772DP-T1-GE3
DISTI # 26730596		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		5930
  • 3000:$0.2975
  • 1000:$0.3008
  • 500:$0.3273
  • 250:$0.3609
  • 100:$0.3648
  • 25:$0.3925
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7772DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 21000
  • 3000:$0.3199
  • 6000:$0.3189
  • 12000:$0.3179
  • 18000:$0.3169
  • 30000:$0.3169
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R (Alt: SI7772DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7772DP-T1-GE3
    DISTI # 35R6247    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Product Range:- RoHS Compliant: Yes0
    • 1:$0.8200
    • 25:$0.6540
    • 50:$0.5760
    • 100:$0.4970
    • 250:$0.4540
    • 500:$0.4100
    • 1000:$0.3430
    SI7772DP-T1-GE3.
    DISTI # 15AC0304    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:3.9W,No. of Pins:8Pins RoHS Compliant: Yes21000
    • 1:$0.3420
    • 3000:$0.3420
    SI7772DP-T1-GE3
    DISTI # 781-SI7772DP-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		1843
    • 1:$0.8200
    • 10:$0.6540
    • 100:$0.4970
    • 500:$0.4100
    • 1000:$0.3430
    • 3000:$0.3420
    SI7772DP-T1-GE3Vishay Siliconix 2988
      SI7772DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		Americas - Stock
        SI7772DP-T1-GE3
        DISTI # C1S803604553529        		Vishay IntertechnologiesMOSFETs
        RoHS: Compliant        		5930
        • 250:$0.3609
        • 100:$0.3648
        • 25:$0.3925
        • 10:$0.4361
        Bild Teil # Beschreibung
        TPD1E1B04DPYR

        Mfr.#: TPD1E1B04DPYR

        OMO.#: OMO-TPD1E1B04DPYR

        		 TVS Diodes / ESD Suppressors 1-channel ESD protection diode with low dynamic resistance and low clamping voltage 2-X1SON -40 to 125
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        Mfr.#: ESD307U102NE6327XTSA1

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        		 RS-232 Interface IC RS232 3V 2D/2R 15KV SHTDWN IND
        LM4132CMF-3.0/NOPB

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        OMO.#: OMO-LM4132CMF-3-0-NOPB

        		 Voltage References SOT23 Precision Low Dropout Voltage Refe
        SI7617DN-T1-GE3

        Mfr.#: SI7617DN-T1-GE3

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        2N7002BKMB,315

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        OMO.#: OMO-2N7002BKMB-315

        		 MOSFET N-Chan 60V 450mA
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        Mfr.#: SI7617DN-T1-GE3

        OMO.#: OMO-SI7617DN-T1-GE3-VISHAY

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        LM4132CMF-3.0/NOPB

        Mfr.#: LM4132CMF-3.0/NOPB

        OMO.#: OMO-LM4132CMF-3-0-NOPB-TEXAS-INSTRUMENTS

        		 Voltage References SOT23 Precision Low Dropout Voltage Refe
        TPD1E1B04DPYR

        Mfr.#: TPD1E1B04DPYR

        OMO.#: OMO-TPD1E1B04DPYR-TEXAS-INSTRUMENTS

        		 TVS DIODE 3.6V 8.5V 2X1SON
        AP1608SGC

        Mfr.#: AP1608SGC

        OMO.#: OMO-AP1608SGC-1052

        		 Standard LEDs - SMD GREEN WATER CLEAR
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1987
        Menge eingeben:
        Der aktuelle Preis von SI7772DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,81 $
        0,81 $
        10
        0,65 $
        6,53 $
        100
        0,50 $
        49,60 $
        500
        0,41 $
        205,00 $
        1000
        0,33 $
        328,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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