FCA22N60N

FCA22N60N
Mfr. #:
FCA22N60N
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Channel SupreMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCA22N60N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCA22N60N Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PN-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
140 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
205 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SupreMOS
Verpackung:
Rohr
Höhe:
20.1 mm
Länge:
16.2 mm
Serie:
FCA22N60N
Transistortyp:
1 N-Channel
Typ:
SupreMOS
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
22 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
16.7 s
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
49 ns
Typische Einschaltverzögerungszeit:
16.9 s
Gewichtseinheit:
0.225789 oz
Tags
FCA22, FCA2, FCA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-3P
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3P(N) Rail
***p One Stop Global
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3PN Tube
***Components
MOSFET SuperMOS canal N 600 V 22A TO-3
***i-Key
MOSFET N-CH 600V 22A TO-3PN
***inecomponents.com
SupreMOS, 22A in TO3PN
***ure Electronics
SUPREMOS, 22A IN TO3PN
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,600V,22A,TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCP22N60N/FCPF22N60N/FCA22N60N SupreMOS® MOSFET
On Semiconductor FCP22N60N / FCPF22N60N / FCA22N60N SupreMOS® N-Channel MOSFETs are the next generation high voltage super-junction MOSFETs. These SupreMOS MOSFETs utilize advanced technology and precise process control to provide world-class Rsp on-resistance, superior switching performance, and ruggedness. Thes SupreMOS MOSFETs fit the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
FCA22N60N
DISTI # V36:1790_06359509
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3PN Rail0
  • 450000:$2.2510
  • 225000:$2.2560
  • 45000:$3.0220
  • 4500:$4.6270
  • 450:$4.9100
FCA22N60N
DISTI # FCA22N60NOS-ND
ON SemiconductorMOSFET N-CH 600V 22A TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube
20In Stock
  • 2700:$2.5939
  • 900:$3.2374
  • 450:$3.6080
  • 25:$4.3880
  • 10:$4.6420
  • 1:$5.1700
FCA22N60N
DISTI # FCA22N60N
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FCA22N60N)
Min Qty: 114
Container: Bulk
Americas - 0
  • 570:$2.6900
  • 1140:$2.6900
  • 114:$2.7900
  • 228:$2.7900
  • 342:$2.7900
FCA22N60N
DISTI # FCA22N60N
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FCA22N60N)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.0900
  • 100:€2.2900
  • 500:€2.2900
  • 50:€2.3900
  • 25:€2.4900
  • 10:€2.5900
  • 1:€2.8900
FCA22N60N
DISTI # FCA22N60N
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FCA22N60N)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$2.1900
  • 1800:$2.2900
  • 2700:$2.2900
  • 450:$2.3900
  • 900:$2.3900
FCA22N60N
DISTI # 64R2976
ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:205W,MSL:-RoHS Compliant: Yes0
  • 500:$3.4900
  • 250:$3.8600
  • 100:$4.0600
  • 50:$4.2500
  • 25:$4.4500
  • 10:$4.6500
  • 1:$5.4300
FCA22N60N
DISTI # 512-FCA22N60N
ON SemiconductorMOSFET 600V N-Channel SupreMOS
RoHS: Compliant
694
  • 1:$4.9100
  • 10:$4.1700
  • 100:$3.6200
  • 250:$3.4300
  • 500:$3.0800
  • 1000:$2.6000
  • 2500:$2.4700
FCA22N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
728
  • 1000:$2.7100
  • 500:$2.8500
  • 100:$2.9700
  • 25:$3.1000
  • 1:$3.3400
FCA22N60N
DISTI # 7599431P
ON SemiconductorMOSFET N-CH 600V 22A SUPREMOS TO-3P(N), TU141
  • 200:£1.8800
  • 100:£1.9200
  • 50:£1.9700
  • 10:£2.1300
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Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TRAY PACKING)
Verfügbarkeit
Aktie:
694
Auf Bestellung:
2677
Menge eingeben:
Der aktuelle Preis von FCA22N60N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,91 $
4,91 $
10
4,17 $
41,70 $
100
3,62 $
362,00 $
250
3,43 $
857,50 $
500
3,08 $
1 540,00 $
1000
2,60 $
2 600,00 $
2500
2,47 $
6 175,00 $
5000
2,37 $
11 850,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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