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2N5302G

2N5302G
Mfr. #:
2N5302G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 30A 60V 200W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5302G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5302G Datasheet2N5302G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-204-2
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
60 V
Kollektor- Basisspannung VCBO:
60 V
Kollektor-Emitter-Sättigungsspannung:
0.75 V
Maximaler DC-Kollektorstrom:
30 A
Bandbreitenprodukt fT gewinnen:
2 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N5302
Höhe:
8.51 mm
Länge:
39.37 mm
Verpackung:
Tablett
Breite:
26.67 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
30 A
DC-Kollektor/Basisverstärkung hfe Min:
15
Pd - Verlustleistung:
200 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Gewichtseinheit:
0.423993 oz
Tags
2N5302, 2N530, 2N53, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
***ure Electronics
2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***emi
High Power NPN Bipolar Power Transistor
***ark
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2N5302G
DISTI # 2N5302GOS-ND		ON SemiconductorTRANS NPN 60V 30A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray		402In Stock
  • 1000:$2.4309
  • 500:$2.8824
  • 100:$3.3860
  • 10:$4.1330
  • 1:$4.6000
2N5302G
DISTI # 26762258		ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		600
  • 1000:$2.0985
  • 500:$2.3375
  • 300:$2.6010
2N5302G
DISTI # 2N5302G		ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5302G)
RoHS: Compliant
Min Qty: 300
Container: Tray		Americas - 0
  • 300:$2.0900
  • 500:$2.0900
  • 800:$2.0900
  • 1500:$1.9900
  • 3000:$1.9900
2N5302G
DISTI # 26K5293		ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5293)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.3800
  • 10:$3.7300
  • 25:$3.5600
  • 50:$3.4000
  • 100:$3.2300
  • 250:$3.0600
  • 500:$2.7500
2N5302G
DISTI # 26K5293		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 60V TO-204,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:60V,Transition Frequency ft:2MHz,Power Dissipation Pd:200W,DC Collector Current:30A,DC Current Gain hFE:5hFE,No. of Pins:2Pins RoHS Compliant: Yes300
  • 1:$4.5200
  • 10:$3.8700
  • 25:$3.7000
  • 50:$3.5400
  • 100:$3.3700
  • 250:$3.2000
  • 500:$2.8900
2N5302G
DISTI # 59M4756		ON SemiconductorBipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2 MHz, 200 W, 30 A, 2 RoHS Compliant: Yes127
  • 1:$4.3800
  • 10:$3.7300
  • 25:$3.5600
  • 50:$3.4000
  • 100:$3.2300
  • 250:$3.0600
  • 500:$2.7500
2N5302GON Semiconductor 
RoHS: Not Compliant		2845
  • 1000:$2.4200
  • 500:$2.5500
  • 100:$2.6500
  • 25:$2.7700
  • 1:$2.9800
2N5302G
DISTI # 863-2N5302G		ON SemiconductorBipolar Transistors - BJT 30A 60V 200W NPN
RoHS: Compliant		371
  • 1:$4.3800
  • 10:$3.7300
  • 100:$3.2300
  • 200:$3.0600
  • 500:$2.7500
  • 1000:$2.3200
  • 2000:$2.2000
2N5302
DISTI # 863-2N5302		ON SemiconductorBipolar Transistors - BJT 30A 60V 200W NPN
RoHS: Not compliant		0
    2N5302G
    DISTI # C1S541900338856    		ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray
    RoHS: Compliant    		100
    • 100:$2.9060
    • 10:$3.2960
    • 1:$3.7760
    2N5302G
    DISTI # 1459023    		ON SemiconductorTRANSISTOR, NPN, TO-3
    RoHS: Compliant    		427
    • 1:£3.7400
    • 10:£2.7100
    • 100:£2.2100
    • 250:£2.1100
    • 500:£2.0000
    2N5302G
    DISTI # 1459023    		ON SemiconductorTRANSISTOR, NPN, TO-3
    RoHS: Compliant    		427
    • 1:$6.9300
    • 10:$5.9100
    • 100:$5.1200
    • 200:$4.8500
    • 500:$4.3500
    • 1000:$3.6800
    • 2000:$3.4900
    • 5000:$3.3500
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    Verfügbarkeit
    Aktie:
    269
    Auf Bestellung:
    2252
    Menge eingeben:
    Der aktuelle Preis von 2N5302G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,44 $
    6,44 $
    10
    5,82 $
    58,20 $
    50
    5,55 $
    277,50 $
    100
    4,82 $
    482,00 $
    200
    4,60 $
    920,00 $
    500
    4,19 $
    2 095,00 $
    1000
    3,65 $
    3 650,00 $
    2500
    3,52 $
    8 800,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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