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FQI8N60CTU

FQI8N60CTU
Mfr. #:
FQI8N60CTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Channel Adv Q-FET C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQI8N60CTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
7.5 A
Rds On - Drain-Source-Widerstand:
1.2 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FQI8N60C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
8.7 S
Abfallzeit:
64.5 ns
Produktart:
MOSFET
Anstiegszeit:
60.5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
81 ns
Typische Einschaltverzögerungszeit:
16.5 ns
Teil # Aliase:
FQI8N60CTU_NL
Gewichtseinheit:
0.073511 oz
Tags
FQI8N6, FQI8N, FQI8, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 600 V, 7.5 A, 1.2 Ω, I2PAK
***ark
MOSFET, N-CH, 600V, 7.5A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQI8N60CTU
DISTI # 26637301		ON Semiconductor600V N-CHANNEL ADVANCE Q-FET C3000
  • 1000:$0.7599
FQI8N60CTU
DISTI # FQI8N60CTU-ND		ON SemiconductorMOSFET N-CH 600V 7.5A I2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		964In Stock
  • 1000:$1.0411
  • 500:$1.2564
  • 100:$1.6154
  • 10:$2.0100
  • 1:$2.2300
FQI8N60CTU
DISTI # FQI8N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI8N60CTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7789
  • 2000:$0.7739
  • 4000:$0.7639
  • 6000:$0.7539
  • 10000:$0.7349
FQI8N60CTU
DISTI # FQI8N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI8N60CTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4949
  • 10:€1.1639
  • 25:€0.9649
  • 50:€0.8139
  • 100:€0.7959
  • 500:€0.7709
  • 1000:€0.7539
FQI8N60CTU
DISTI # 512-FQI8N60CTU		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
RoHS: Compliant		991
  • 1:$1.9300
  • 10:$1.6400
  • 100:$1.3100
  • 500:$1.1500
  • 1000:$0.9470
  • 2000:$0.8820
  • 5000:$0.8490
FQI8N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		24817
  • 1000:$1.1500
  • 500:$1.2100
  • 100:$1.2600
  • 25:$1.3100
  • 1:$1.4100
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Mfr.#: 2200LL-391-H-RC

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Mfr.#: 1101001000045

OMO.#: OMO-1101001000045-1190

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Mfr.#: 1N4007G

OMO.#: OMO-1N4007G-ON-SEMICONDUCTOR

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Mfr.#: 2200LL-391-H-RC

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 Fixed Inductors TOROID INDUCTR 390uH LOW LOSS HI CURRNT
Verfügbarkeit
Aktie:
989
Auf Bestellung:
2972
Menge eingeben:
Der aktuelle Preis von FQI8N60CTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,73 $
1,73 $
10
1,47 $
14,70 $
100
1,17 $
117,00 $
500
1,03 $
515,00 $
1000
0,85 $
854,00 $
2000
0,80 $
1 590,00 $
5000
0,77 $
3 830,00 $
10000
0,74 $
7 360,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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