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S25FL128SAGNFI011

S25FL128SAGNFI011
Mfr. #:
S25FL128SAGNFI011
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash 128Mb 3V 133MHz Serial NOR Flash
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL128SAGNFI011 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S25FL128SAGNFI011 Mehr Informationen S25FL128SAGNFI011 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
WSON-8
Serie:
S25FL128S
Speichergröße:
128 Mbit
Maximale Taktfrequenz:
133 MHz
Oberflächentyp:
SPI
Organisation:
16 M x 8
Timing-Typ:
Asynchron
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
100 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Verpackung:
Rohr
Speichertyp:
NOCH
Geschwindigkeit:
133 MHz
Die Architektur:
Finsternis
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
82
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SpiegelBit
Gewichtseinheit:
0.000384 oz
Tags
S25FL128SAGNFI01, S25FL128SAGNFI, S25FL128SAGN, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Product Description Demo for Development.
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
FL Serial NOR Flash
Cypress FL Serial NOR Flash memory offers a reduced pin count for lower system cost while providing optimal read/write performance for a variety of automotive, networking, consumer electronics, and industrial applications. With read speeds up to 133MHz clock speed in Single/Dual/Quad I/O mode and 80MHz for double data rate (DDR) modes, the FL family delivers up to 80 MBytes/sec of read throughput. In addition, industry-leading programming performance of up to 1.5 MBytes/s speeds manufacturing throughput and lowers programming costs dramatically. The family features densities from 4Mb up to 1Gb with a 3.0V power supply. Select devices are available with an I/O supply voltage of 1.65V to 3.6V.Learn More
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25 MirrorBit® Flash Non-Volatile Memory
Cypress S25 MirrorBit® Flash Non-Volatile Memory uses MirrorBit technology, which stores two data bits in each memory array transistor; Eclipse architecture, which dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.  S25 MirrorBit® Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
FL Serial NOR Flash Memory
Cypress FL Serial NOR Flash Memory offer a reduced pin count for lower system cost while providing optimal read/write performance. This makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. There are four product groups in the FL family: FL-S, FL-L, FL1-K and FL-P.Learn More
Teil # Mfg. Beschreibung Aktie Preis
S25FL128SAGNFI011
DISTI # S25FL128SAGNFI011-ND		Cypress SemiconductorIC FLASH 128M SPI 133MHZ 8WSON
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1066:$2.4646
  • 574:$2.5922
  • 328:$2.6914
  • 164:$2.7015
  • 82:$3.0122
  • 25:$3.0292
  • 10:$3.0960
  • 1:$3.4100
S25FL128SAGNFI011
DISTI # 76T1522		Cypress SemiconductorFLASH MEMORY, 128 MBIT, 133 MHZ, 8-WSON,Flash Memory Type:Serial NOR,Memory Size:128Mbit,Flash Memory Configuration:-,IC Interface Type:SPI,Memory Case Style:WSON,No. of Pins:8Pins,Clock Frequency:133MHz,Access Time:- RoHS Compliant: Yes0
  • 1:$2.9300
  • 10:$2.6600
  • 25:$2.6300
  • 50:$2.5900
  • 100:$2.3200
  • 250:$2.3100
  • 500:$2.2200
S25FL128SAGNFI010
DISTI # 797-25FL128SAGNFI010		Cypress SemiconductorNOR Flash 128Mb 3V 133MHz Serial NOR Flash
RoHS: Compliant		0
  • 1:$2.9300
  • 10:$2.6600
  • 25:$2.6300
  • 50:$2.5900
  • 100:$2.3200
  • 250:$2.3100
S25FL128SAGNFI011
DISTI # 797-25FL128SAGNFI011		Cypress SemiconductorNOR Flash 128Mb 3V 133MHz Serial NOR Flash
RoHS: Compliant		0
  • 1:$2.9300
  • 10:$2.6600
  • 25:$2.6300
  • 50:$2.5900
  • 100:$2.3200
  • 250:$2.3100
  • 500:$2.2200
S25FL128SAGNFI011
DISTI # 2340543		Cypress SemiconductorMEMORY, FLASH, 128MB, 8WSON
RoHS: Compliant		0
  • 1:£2.5000
  • 10:£2.0100
  • 25:£1.9900
  • 50:£1.9600
  • 100:£1.7500
S25FL128SAGNFI011
DISTI # 2340543		Cypress SemiconductorMEMORY, FLASH, 128MB, 8WSON
RoHS: Compliant		0
  • 1:$4.6500
  • 10:$4.2200
  • 25:$4.1600
  • 50:$4.1000
  • 100:$3.6800
  • 250:$3.6600
  • 500:$3.5200
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Verfügbarkeit
Aktie:
48
Auf Bestellung:
2031
Menge eingeben:
Der aktuelle Preis von S25FL128SAGNFI011 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,92 $
2,92 $
10
2,65 $
26,50 $
25
2,62 $
65,50 $
50
2,58 $
129,00 $
100
2,31 $
231,00 $
250
2,30 $
575,00 $
500
2,21 $
1 105,00 $
1000
2,12 $
2 120,00 $
2500
2,07 $
5 175,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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