TK31N60X,S1F

TK31N60X,S1F
Mfr. #:
TK31N60X,S1F
Hersteller:
Toshiba
Beschreibung:
MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TK31N60X,S1F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31N60X,S1F DatasheetTK31N60X,S1F Datasheet (P4-P6)TK31N60X,S1F Datasheet (P7-P9)TK31N60X,S1F Datasheet (P10)
ECAD Model:
Mehr Informationen:
TK31N60X,S1F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
30.8 A
Rds On - Drain-Source-Widerstand:
73 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
230 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
DTMOSIV
Verpackung:
Spule
Höhe:
20.95 mm
Länge:
15.94 mm
Serie:
TK31N60X
Transistortyp:
1 N-Channel
Breite:
5.02 mm
Marke:
Toshiba
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
130 ns
Typische Einschaltverzögerungszeit:
55 ns
Gewichtseinheit:
1.340411 oz
Tags
TK31N60X,S, TK31N60X, TK31N, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***o
    A***o
    UA

    Everything is fine

    2019-03-04
    E**h
    E**h
    CL

    The product did not arrive, but the seller responded immediately

    2019-06-19
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 600V 30.8A 3-Pin TO-247
***i-Key
MOSFET N-CH 600V 30.8A TO-247
***
600V HIGH SPEED 88MOHM DTMOS
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Teil # Mfg. Beschreibung Aktie Preis
TK31N60X,S1F
DISTI # V99:2348_13896271
Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247 Tube25
  • 2500:$2.4030
  • 1000:$2.5070
  • 500:$2.9250
  • 250:$3.2320
  • 100:$3.5510
  • 30:$3.8680
  • 10:$3.9120
  • 1:$4.6960
TK31N60X,S1F
DISTI # TK31N60XS1F-ND
Toshiba America Electronic ComponentsMOSFET N-CH 600V 30.8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
146In Stock
  • 1020:$3.0030
  • 510:$3.5607
  • 120:$4.3972
  • 30:$4.8263
  • 1:$6.0100
TK31N60X,S1F(S
DISTI # 30603332
Toshiba America Electronic ComponentsTK31N60X,S1F(S430
  • 120:$2.9707
  • 60:$3.4552
  • 10:$3.8760
  • 6:$4.7175
TK31N60X,S1F
DISTI # 25885836
Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247 Tube25
  • 10:$3.8340
  • 3:$4.5870
TK31N60X,S1F
DISTI # TK31N60X,S1F
Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 30.8A 3-Pin TO-247 - Rail/Tube (Alt: TK31N60X,S1F)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 0
  • 30:$2.9900
  • 60:$2.7900
  • 120:$2.6900
  • 180:$2.4900
  • 300:$2.4900
TK31N60X,S1F
DISTI # 757-TK31N60XS1F
Toshiba America Electronic ComponentsMOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
RoHS: Compliant
28
  • 1:$5.4600
  • 10:$4.3900
  • 30:$4.3900
  • 100:$4.0000
  • 250:$3.6100
  • 500:$3.2400
  • 1000:$2.7300
  • 2500:$2.6000
TK31N60X,S1F(S
DISTI # 1250566
Toshiba America Electronic ComponentsMOSFET N-CHANNEL 600V 30.8A TO247, PK18
  • 2:£2.6200
  • 10:£2.3600
  • 20:£2.1750
  • 50:£2.1400
  • 100:£2.1200
TK31N60X,S1F
DISTI # C1S751201156592
Toshiba America Electronic ComponentsMOSFETs
RoHS: Compliant
25
  • 10:$3.8340
  • 1:$4.5870
TK31N60X,S1F(S
DISTI # C1S751201141934
Toshiba America Electronic ComponentsMOSFETs Silicon N-Channel MOS (DTMOSIV-H)
RoHS: Not Compliant
190
  • 120:$2.3300
  • 60:$2.7100
  • 10:$3.0400
  • 1:$3.7000
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OMO.#: OMO-KNP100JR-73-270R

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Mfr.#: 06033C105KAT2A

OMO.#: OMO-06033C105KAT2A-428

Cap Ceramic 1uF 25V X7R 10% Pad SMD 0603 125C T/R
AY2222M35Y5US63L7

Mfr.#: AY2222M35Y5US63L7

OMO.#: OMO-AY2222M35Y5US63L7-VISHAY

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INA181A2IDBVR

Mfr.#: INA181A2IDBVR

OMO.#: OMO-INA181A2IDBVR-TEXAS-INSTRUMENTS

INA181A2IDBVR
Verfügbarkeit
Aktie:
106
Auf Bestellung:
2089
Menge eingeben:
Der aktuelle Preis von TK31N60X,S1F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,46 $
5,46 $
10
4,39 $
43,90 $
100
4,00 $
400,00 $
250
3,61 $
902,50 $
500
3,24 $
1 620,00 $
1000
2,73 $
2 730,00 $
2500
2,60 $
6 500,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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