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STD12N60DM2AG

STD12N60DM2AG
Mfr. #:
STD12N60DM2AG
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STD12N60DM2AG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STD12N60DM2AG Mehr Informationen STD12N60DM2AG Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
440 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
14.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
110 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Serie:
STD12N60DM2AG
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
9.5 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
15 ns
Tags
STD12N60, STD12N6, STD12N, STD12, STD1, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STD12N60DM2AG N-channel Power MOSFET
STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is a part of the MDmesh™ DM2 fast-recovery diodes. This automotive grade N-channel power MOSFET offers very low recovery charge (Qrr) and recovery time (trr) combined with low RDS(on). The STD12N60DM2AG power MOSFET features low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. This power MOSFET is suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von STD12N60DM2AG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,62 $
1,62 $
10
1,38 $
13,80 $
100
1,10 $
110,00 $
500
0,96 $
481,50 $
1000
0,80 $
798,00 $
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