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IPB081N06L3GATMA1

IPB081N06L3GATMA1
Mfr. #:
IPB081N06L3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB081N06L3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
6.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
79 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
35 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
26 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
G IPB081N06L3 IPB81N6L3GXT SP000398076
Gewichtseinheit:
0.139332 oz
Tags
IPB081N06L3G, IPB081, IPB08, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
IPB081N06L3GATMA1
DISTI # V72:2272_06384674		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		990
  • 500:$0.8331
  • 250:$0.8476
  • 100:$0.9417
  • 25:$1.1252
  • 10:$1.2502
  • 1:$1.6010
IPB081N06L3GATMA1
DISTI # V36:1790_06384674		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.5248
  • 500000:$0.5252
  • 100000:$0.5803
  • 10000:$0.6904
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 10000:$0.6055
  • 5000:$0.6291
  • 2000:$0.6622
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # 31919767		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		990
  • 12:$1.6010
IPB081N06L3GXT
DISTI # IPB081N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB081N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6029
  • 2000:$0.6249
  • 1000:$0.6489
IPB081N06L3GATMA1
DISTI # 60R2670		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes681
  • 500:$0.8650
  • 100:$0.9790
  • 10:$1.2700
  • 1:$1.4800
IPB081N06L3 G
DISTI # 726-IPB081N06L3G		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		3004
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 726-IPB081N06L3GATMA		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		2030
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 8269525P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL975
  • 1000:£0.4720
  • 500:£0.5830
  • 250:£0.6220
  • 100:£0.6600
IPB081N06L3GATMA1
DISTI # 1775548		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-3
RoHS: Compliant		681
  • 2000:$0.9040
  • 1000:$1.0200
  • 500:$1.2900
  • 100:$1.4600
  • 10:$1.9000
  • 1:$2.2200
IPB081N06L3GATMA1
DISTI # XSKDRABV0051843		Infineon Technologies AG 
RoHS: Compliant		2200 in Stock0 on Order
  • 2200:$0.7747
  • 1000:$0.8300
IPB081N06L3GATMA1
DISTI # 1775548		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31791
  • 500:£0.6670
  • 250:£0.7110
  • 100:£0.7540
  • 10:£1.0300
  • 1:£1.3100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB081N06L3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,47 $
1,47 $
10
1,26 $
12,60 $
100
0,97 $
96,90 $
500
0,86 $
428,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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