RJH65T46DPQ-A0#T0

RJH65T46DPQ-A0#T0
Mfr. #:
RJH65T46DPQ-A0#T0
Hersteller:
Renesas Electronics
Beschreibung:
IGBT Transistors IGBT - 650V/40A/TO-247A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RJH65T46DPQ-A0#T0 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH65T46DPQ-A0#T0 DatasheetRJH65T46DPQ-A0#T0 Datasheet (P4-P6)RJH65T46DPQ-A0#T0 Datasheet (P7-P9)RJH65T46DPQ-A0#T0 Datasheet (P10)
ECAD Model:
Mehr Informationen:
RJH65T46DPQ-A0#T0 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Renesas Elektronik
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247A-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
340.9 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
Renesas Elektronik
Gate-Emitter-Leckstrom:
+/- 1 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Gewichtseinheit:
0.211644 oz
Tags
RJH65T4, RJH65T, RJH65, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, Renesas Electronics RJH65T46DPQ-A0#T0 IGBT, 80 A 650 V, 3-Pin TO-247A
***ical
Trans IGBT Chip N-CH 650V 80A 340900mW 3-Pin(3+Tab) TO-247A Tube
***i-Key
IGBT TRENCH 650V 80A TO247A
***et
IGBT - 650V40ATO-247A
IGBT Transistors
Renesas IGBT Transistors incorporate Trench gate, thin wafer technology, and feature built-in fast recovery diode in one package. These transistors include single configuration and incorporate through hole mounting style. The IGBT transistor's collector to emitter voltage ranges from 600V to 650V. Typical applications include current resonance circuit, inverters, induction heating, microwave oven, and power factor correction circuit.Learn More
Bild Teil # Beschreibung
967067-1

Mfr.#: 967067-1

OMO.#: OMO-967067-1

Automotive Connectors WIRE SEAL 24-18AWG
CC45SL3DD220JYNNA

Mfr.#: CC45SL3DD220JYNNA

OMO.#: OMO-CC45SL3DD220JYNNA

Ceramic Disc Capacitors D: 5.5mm 2kV 22pF SL 5% LS:5mm
1718760-3

Mfr.#: 1718760-3

OMO.#: OMO-1718760-3

Automotive Connectors Tab 1.2 X 0.6 LL
CC45SL3DD470JYGNA

Mfr.#: CC45SL3DD470JYGNA

OMO.#: OMO-CC45SL3DD470JYGNA

Ceramic Disc Capacitors D: 5.5mm 2kV 47pF SL 5% LS:5mm
1718760-3

Mfr.#: 1718760-3

OMO.#: OMO-1718760-3-TE-CONNECTIVITY

Automotive Connectors Tab 1.2 X 0.6 LL
CC45SL3DD220JYNNA

Mfr.#: CC45SL3DD220JYNNA

OMO.#: OMO-CC45SL3DD220JYNNA-TDK

Ceramic Disc Capacitors CC45 22pF 2.0KV SL 5% Cut Leads
CC45SL3DD470JYGNA

Mfr.#: CC45SL3DD470JYGNA

OMO.#: OMO-CC45SL3DD470JYGNA-TDK

Ceramic Disc Capacitors CC45 47pF 2kv SL 5% long kink
967067-1

Mfr.#: 967067-1

OMO.#: OMO-967067-1-TE-CONNECTIVITY

Automotive Connectors WIRE SEAL 24-18AWG
Verfügbarkeit
Aktie:
107
Auf Bestellung:
2090
Menge eingeben:
Der aktuelle Preis von RJH65T46DPQ-A0#T0 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,22 $
6,22 $
10
5,55 $
55,50 $
25
5,00 $
125,00 $
50
4,78 $
239,00 $
100
4,56 $
456,00 $
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