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SMUN5313DW1T1G

SMUN5313DW1T1G
Mfr. #:
SMUN5313DW1T1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SMUN5313DW1T1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SMUN5313DW1T1G DatasheetSMUN5313DW1T1G Datasheet (P4-P6)SMUN5313DW1T1G Datasheet (P7-P9)SMUN5313DW1T1G Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Dual
Polarität des Transistors:
NPN, PNP
Typischer Eingangswiderstand:
47 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Pd - Verlustleistung:
187 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
MUN5313DW1
Verpackung:
Spule
Marke:
ON Semiconductor
Anzahl der Kanäle:
2 Channel
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Qualifikation:
AEC-Q101
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000265 oz
Tags
SMUN531, SMUN53, SMUN5, SMUN, SMU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nsix Microsemi
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***Yang
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
***emi
Complementary Bipolar Digital Transistor (BRT)
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
MUN Series 50 V 100 mA 10 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
***Yang
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SC-88 T/R - Product that comes on tape, but is not reeled
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***(Formerly Allied Electronics)
MUN5314DW1T1G NPN+PNP Digi Transistor,100 mA 50V 10 kOhm,Ratio Of.21,6-Pin SC-88 | ON Semiconductor MUN5314DW1T1G
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:50V; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:47kohm RoHS Compliant: Yes
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
***nsix Microsemi
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***ure Electronics
MUN Series 50 V 100 mA 47 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***p One Stop Global
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
***enic
2 NPN pre-biased (Dual) 187mW 100mA 50V SC-70-6(SOT-363) Digital Transistors ROHS
***ark
Brt Transistor, 50V, 47K/47Kohm, Sc88; C; Digital Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Rohs Compliant: Yes
***nell
TRANS, 50V, 47/47KOHM, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***ical
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
***ure Electronics
MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***(Formerly Allied Electronics)
ON Semi SMUN5214DW1T1G Dual NPN BipolarTransistor; 0.1 A; 50 V; 6-Pin SOT-363
***enic
2 NPN pre-biased (Dual) 250mW 100mA 50V SOT-363 Digital Transistors ROHS
***nell
TRANS, AEC-Q101, DUAL NPN, 50V, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
SMUN5313DW1T1G
DISTI # SMUN5313DW1T1GOSTR-ND		ON SemiconductorTRANS NPN/PNP PREBIAS SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 30000:$0.0814
  • 15000:$0.0871
  • 6000:$0.0955
  • 3000:$0.1011
SMUN5313DW1T1G
DISTI # SMUN5313DW1T1GOSCT-ND		ON SemiconductorTRANS NPN/PNP PREBIAS SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1157
  • 500:$0.1505
  • 100:$0.2199
  • 10:$0.3530
  • 1:$0.4700
SMUN5313DW1T1G
DISTI # SMUN5313DW1T1GOSDKR-ND		ON SemiconductorTRANS NPN/PNP PREBIAS SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1157
  • 500:$0.1505
  • 100:$0.2199
  • 10:$0.3530
  • 1:$0.4700
SMUN5313DW1T1G
DISTI # SMUN5313DW1T1G		ON SemiconductorTrans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: SMUN5313DW1T1G)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0689
  • 6000:$0.0689
  • 12000:$0.0679
  • 18000:$0.0669
  • 30000:$0.0659
SMUN5313DW1T1G
DISTI # SMUN5313DW1T1G		ON SemiconductorTrans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: SMUN5313DW1T1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SMUN5313DW1T1G
    DISTI # 76T7382    		ON SemiconductorSS SC88 BR XSTR DUAL 50V / REEL0
    • 1:$0.5120
    • 50:$0.2980
    • 100:$0.1430
    • 250:$0.1380
    • 500:$0.1340
    • 1000:$0.0940
    • 6000:$0.0860
    • 18000:$0.0840
    SMUN5313DW1T1G
    DISTI # 13AC6250    		ON SemiconductorTRANS, AEC-Q101, NPN/PNP, 50V, SOT-363,Digital Transistor Polarity:NPN and PNP Complement,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:47kohm,Base-Emitter Resistor R2:47kohmRoHS Compliant: Yes3000
    • 1:$0.4430
    • 25:$0.3070
    • 50:$0.2250
    • 100:$0.1430
    • 250:$0.1320
    • 500:$0.1210
    • 1000:$0.1100
    SMUN5313DW1T1G
    DISTI # 863-SMUN5313DW1T1G    		ON SemiconductorBipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
    RoHS: Compliant    		372
    • 1:$0.4400
    • 10:$0.3040
    • 100:$0.1400
    • 1000:$0.1070
    • 3000:$0.0910
    • 9000:$0.0830
    SMUN5313DW1T1G
    DISTI # 2724483    		ON SemiconductorTRANS, AEC-Q101, NPN/PNP, 50V, SOT-363
    RoHS: Compliant    		0
    • 5:£0.3140
    • 25:£0.2980
    • 100:£0.1720
    • 250:£0.1450
    • 500:£0.1180
    SMUN5313DW1T1G
    DISTI # C1S541901259398    		ON SemiconductorTrans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SOT-363 T/R
    RoHS: Compliant    		36000
    • 12000:$0.0208
    • 6000:$0.0226
    • 3000:$0.0231
    SMUN5313DW1T1G
    DISTI # 2724483    		ON SemiconductorTRANS, AEC-Q101, NPN/PNP, 50V, SOT-363
    RoHS: Compliant    		0
    • 1:$0.7460
    • 10:$0.5630
    • 100:$0.3510
    • 500:$0.2400
    • 1000:$0.1850
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    Verfügbarkeit
    Aktie:
    14
    Auf Bestellung:
    1997
    Menge eingeben:
    Der aktuelle Preis von SMUN5313DW1T1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,44 $
    0,44 $
    10
    0,30 $
    3,04 $
    100
    0,14 $
    14,00 $
    1000
    0,11 $
    107,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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