DMG6898LSD-13

Mfr. #:: DMG6898LSD-13
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET MOSFET N-CHAN
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DMG6898LSD-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMG6898LSD-13 Datasheet DMG6898LSD-13 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:: DMG6898LSD-13 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 9.5 A

Rds On - Drain-Source-Widerstand:: 11 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 500 mV

Vgs - Gate-Source-Spannung:: 12 V

Qg - Gate-Ladung:: 26 nC, 26 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.28 W

Aufbau:: Dual

Kanalmodus:: Erweiterung

Verpackung:: Spule

Produkt:: MOSFET Kleinsignal

Serie:: DMG6898

Transistortyp:: 2 N-Channel

Marke:: Eingebaute Dioden

Abfallzeit:: 12.33 ns, 12.33 ns

Produktart:: MOSFET

Anstiegszeit:: 12.49 ns, 12.49 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35.89 ns, 35.89 ns

Typische Einschaltverzögerungszeit:: 11.67 ns, 11.67 ns

Gewichtseinheit:: 0.002610 oz

Tags: DMG6898LSD, DMG68, DMG6, DMG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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Vacuum Packaging with PL

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DMG6898LSD-13 Beschreibung

***et: Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R

***ure Electronics: DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8

***ark: Mosfet, Dual, N-Ch, 20V, 9.5A Rohs Compliant: Yes |Diodes Inc. DMG6898LSD-13

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.28 W

***(Formerly Allied Electronics): 20V N-Channel Enhancement MOSFET SOIC8 | Diodes Inc DMN2028USS-13

***ment14 APAC: MOSFET,N CH,20V,9.8A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Source Voltage Vds:20V; On Resistance

***ark: Mosfet,n Channel,20V,7.3A,so8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. DMN2028USS-13

***nell: MOSFET,N CH,20V,9.8A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.8A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 9.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 12V

***(Formerly Allied Electronics): IRF8910PBF Dual N-channel MOSFET Transistor, 10 A, 20 V, 8-Pin SOIC | Infineon IRF8910PBF

***Yang: Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8

***SIT Distribution GmbH: Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

***enic: 20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***itex: Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8

***ure Electronics: Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R

***enic: 20V 8A 2W 18m´Î@4.5V8.3A 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: DUAL N CHANNEL MOSFET, 20V, SOIC; Transi; DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.015ohm; Rds(on) Test Voltage Vgs:12V

***ark: Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 18 mOhm PowerTrench Mosfet - SOIC-8

***enic: 20V 7.5A 18m´Î@4.5V7.5A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ical: Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC N T/R

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:7.5A; Current Id Max:7.5A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):18mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

DMG6898LSD-13 Mehr Informationen

DMx Enhancement Mode MOSFETs: Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DMG6898LSD-13 DISTI # V72:2272_06697794	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R RoHS: Compliant	2180	1000:$0.2463 500:$0.2920 250:$0.3432 100:$0.3573 25:$0.4531 10:$0.5537 1:$0.6283
DMG6898LSD-13 DISTI # V36:1790_06697794	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R RoHS: Compliant	0	2500:$0.2097
DMG6898LSD-13 DISTI # DMG6898LSD-13DICT-ND	Diodes Incorporated	MOSFET 2N-CH 20V 9.5A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9500In Stock	1000:$0.2472 500:$0.3090 100:$0.3909 10:$0.5100 1:$0.5800
DMG6898LSD-13 DISTI # DMG6898LSD-13DIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 9.5A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9500In Stock	1000:$0.2472 500:$0.3090 100:$0.3909 10:$0.5100 1:$0.5800
DMG6898LSD-13 DISTI # DMG6898LSD-13DITR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 9.5A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	12500:$0.1995 5000:$0.2025 2500:$0.2175
DMG6898LSD-13 DISTI # 26571827	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R RoHS: Compliant	95000	2500:$0.2250
DMG6898LSD-13 DISTI # 32440315	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R RoHS: Compliant	2180	39:$0.6283
DMG6898LSD-13 DISTI # DMG6898LSD-13	Diodes Incorporated	Trans MOSFET N-CH 20V 9.5A 8-Pin SOIC T/R (Alt: DMG6898LSD-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	125000:$0.1667 62500:$0.1711 25000:$0.1757 12500:$0.1781 7500:$0.1831 5000:$0.1912 2500:$0.2000
DMG6898LSD-13 DISTI # DMG6898LSD-13	Diodes Incorporated	Trans MOSFET N-CH 20V 9.5A 8-Pin SOIC T/R (Alt: DMG6898LSD-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.1729 15000:€0.1809 10000:€0.1839 5000:€0.1869 2500:€0.1969
DMG6898LSD-13 DISTI # DMG6898LSD-13	Diodes Incorporated	Trans MOSFET N-CH 20V 9.5A 8-Pin SOIC T/R - Tape and Reel (Alt: DMG6898LSD-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.1659 15000:$0.1689 10000:$0.1769 5000:$0.1859 2500:$0.1959
DMG6898LSD-13 DISTI # 70438044	Diodes Incorporated	MOSFET N-Channel 20V 9.5A SOIC8 RoHS: Compliant	0	50:$0.4300 250:$0.3700 1250:$0.3400 2500:$0.3100
DMG6898LSD-13 DISTI # 621-DMG6898LSD-13	Diodes Incorporated	MOSFET MOSFET N-CHAN RoHS: Compliant	7397	1:$0.6700 10:$0.5580 100:$0.3600 1000:$0.2880

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	Mfr.#: BSS123W OMO.#: OMO-BSS123W	MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
	Mfr.#: MCH3484-TL-W OMO.#: OMO-MCH3484-TL-W	MOSFET NCH 0.9V DRIVE SERIE
	Mfr.#: LSM6DS33TR OMO.#: OMO-LSM6DS33TR	IMUs - Inertial Measurement Units iNEMO inertial module: always-on 3D accelerometer and 3D gyroscope
	Mfr.#: MKS2C041001F00MSSD OMO.#: OMO-MKS2C041001F00MSSD-1190	Film Capacitors 1.0 uF 63 VDC 20%
	Mfr.#: MCH3481-TL-W OMO.#: OMO-MCH3481-TL-W-ON-SEMICONDUCTOR	MOSFET N-CH 20V 2A MCPH3
	Mfr.#: MCH3484-TL-W OMO.#: OMO-MCH3484-TL-W-ON-SEMICONDUCTOR	MOSFET N-CH 20V 4.5A MCPH3
	Mfr.#: JMK105C6105MV-F OMO.#: OMO-JMK105C6105MV-F-TAIYO-YUDEN	CAP CER 1UF 6.3V X6S 0402
	Mfr.#: LSM6DS33TR OMO.#: OMO-LSM6DS33TR-STMICROELECTRONICS	IMU ACCEL/GYRO I2C/SPI 16LGA

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1990
Menge eingeben:

Der aktuelle Preis von DMG6898LSD-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,67 $~~; ~~0,67 $~~

10: ~~0,56 $~~; ~~5,58 $~~

100: ~~0,36 $~~; ~~36,00 $~~

1000: ~~0,29 $~~; ~~288,00 $~~

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