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IRF300P226

IRF300P226
Mfr. #:
IRF300P226
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET IFX OPTIMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF300P226 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
300 V
Id - Kontinuierlicher Drainstrom:
75 A
Rds On - Drain-Source-Widerstand:
19 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
191 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
313 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
97 S
Abfallzeit:
32 ns
Produktart:
MOSFET
Anstiegszeit:
44 ns
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
79 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
SP001582442
Tags
IRF300, IRF30, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
300V Single N-Channel StrongIRFET™ in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dv/dt and di/dt Capability; Pb-Free ; RoHS Compliant ; Halogen-Free | Target Applications: UPS and Inverter applications; Half-bridge and full-bridge topologies; Resonant mode power supplies; DC/DC and AC/DC converters; OR-ing and redundant power switches; Brushed and BLDC Motor drive applications; Battery powered circuits
***nell
MOSFET, N-CH, 300V, 100A, 556W, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 556W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: StrongIRFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRF300P226
DISTI # IRF300P226-ND		Infineon Technologies AGMOSFET IFX OPTIMOS TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		400In Stock
  • 800:$4.9235
  • 400:$5.8531
  • 10:$7.7470
  • 1:$8.6100
IRF300P226
DISTI # 31345226		Infineon Technologies AGIFX OPTIMOS400
  • 1:$8.6100
IRF300P226
DISTI # IRF300P226		Infineon Technologies AGTrans MOSFET N-CH 300V 50A 3-Pin TO-247AC - Rail/Tube (Alt: IRF300P226)
RoHS: Compliant
Min Qty: 400
Container: Tube		Americas - 400
  • 400:$4.4900
  • 800:$4.2900
  • 1600:$4.0900
  • 2400:$3.9900
  • 4000:$3.8900
IRF300P226
DISTI # 726-IRF300P226		Infineon Technologies AGMOSFET IFX OPTIMOS
RoHS: Compliant		0
  • 1:$7.4500
  • 10:$6.7300
  • 25:$6.4200
  • 100:$5.5800
  • 250:$5.3300
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Verfügbarkeit
Aktie:
121
Auf Bestellung:
2104
Menge eingeben:
Der aktuelle Preis von IRF300P226 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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