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IPW65R125C7

IPW65R125C7
Mfr. #:
IPW65R125C7
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R125C7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW65R125C7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
111 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
101 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS C7
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
Infineon-Technologien
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
71 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPW65R125C7XKSA1 SP001080138
Gewichtseinheit:
1.340411 oz
Tags
IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Bild Teil # Beschreibung
50A02CH-TL-E

Mfr.#: 50A02CH-TL-E

OMO.#: OMO-50A02CH-TL-E

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Mfr.#: A1P25S12M3

OMO.#: OMO-A1P25S12M3

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Mfr.#: FCH041N60E

OMO.#: OMO-FCH041N60E

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Mfr.#: FCH125N65S3R0-F155

OMO.#: OMO-FCH125N65S3R0-F155

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Mfr.#: PA-T2X-38E

OMO.#: OMO-PA-T2X-38E

 Heat Sinks 38mm Heatsink Anodized
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Mfr.#: 381LQ221M400H452

OMO.#: OMO-381LQ221M400H452-CORNELL-DUBILIER-ELECTRONICS

 Aluminum Electrolytic Capacitors - Snap In 220uF 400V 20%
381LQ221M400J032

Mfr.#: 381LQ221M400J032

OMO.#: OMO-381LQ221M400J032-CORNELL-DUBILIER-ELECTRONICS

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Mfr.#: 50A02CH-TL-E

OMO.#: OMO-50A02CH-TL-E-ON-SEMICONDUCTOR

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Mfr.#: FCH041N60E

OMO.#: OMO-FCH041N60E-ON-SEMICONDUCTOR

 MOSFET N CH 600V 77A TO-247
Verfügbarkeit
Aktie:
674
Auf Bestellung:
2657
Menge eingeben:
Der aktuelle Preis von IPW65R125C7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,62 $
4,62 $
10
3,93 $
39,30 $
100
3,41 $
341,00 $
250
3,23 $
807,50 $
500
2,90 $
1 450,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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