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MJW3281AG

MJW3281AG
Mfr. #:
MJW3281AG
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 15A 230V 200W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MJW3281AG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJW3281AG DatasheetMJW3281AG Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
230 V
Kollektor- Basisspannung VCBO:
230 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
0.4 V
Maximaler DC-Kollektorstrom:
15 A
Bandbreitenprodukt fT gewinnen:
30 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
MJW3281A
Höhe:
21.08 mm
Länge:
16.26 mm
Verpackung:
Rohr
Breite:
5.3 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
15 A
DC-Kollektor/Basisverstärkung hfe Min:
50
Pd - Verlustleistung:
200 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
30
Unterkategorie:
Transistoren
Gewichtseinheit:
1.340411 oz
Tags
MJW3281A, MJW328, MJW3, MJW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
15 A, 230 V, 200 Watt, NPN Bipolar Power Junction Transistor
***th Star Micro
MJW3281A: Complementary NPN-PNP Silicon Power Bipolar Transistors
***Yang
Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube
***ure Electronics
MJL Series 230 V 15 A PNP Complementary Silicon Power Transistor TO-247
***r Electronics
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, NPN, 230V, 15A, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power
***nell
TRANSISTOR, NPN, 230V, 15A, TO-247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 200W; DC Collector Current: 15A; DC Current Gain hFE: 12hFE; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***emi
15 A, 250 V NPN Darlington Bipolar Power Transistor
***(Formerly Allied Electronics)
ON Semi MJH11022G NPN Darlington Transistor; 15 A 250 V HFE:100; 3-Pin TO-247
***r Electronics
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
***ure Electronics
MJH Series 250 V 15 A Complementary Darlington Silicon Power Transistor - TO-247
***nell
DARLINGTON TRANSISTOR, NPN, 250V, TO-247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 150W; DC Collector Current: 15A; DC Current Gain hFE: 15000hFE;
***ark
Transistor,bjt,npn,250V V(Br)Ceo,16A I(C),to-247Ac Rohs Compliant: Yes
***emi
Bipolar Transistor, NPN, 250 V, 16 A
***Yang
Trans GP BJT NPN 250V 16A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube
***ure Electronics
MJL Series 250 V 16 A Flange Mount NPN Silicon Power Transistor - TO-247
*** Stop Electro
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, BIPLOAR NPN 16A TO247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: -; Power Dissipation Pd: 200W; DC Collector Current: 16A; DC Current Gain hFE: 20hFE; Transistor C
***th Star Micro
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output disk head positioners and linear applications.
***(Formerly Allied Electronics)
ON Semi MJW21194G NPN Bipolar Transistor; 16 A; 250 V; 3-Pin TO-247
***ical
Trans GP BJT NPN 250V 16A 200000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
***ure Electronics
MJL Series 250 V 16 A Flange Mount NPN Silicon Power Transistor - TO-247
***nell
TRANSISTOR BIPOLAR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 2A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-
Teil # Mfg. Beschreibung Aktie Preis
MJW3281AG
DISTI # V99:2348_07305067		ON SemiconductorTrans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		55
  • 500:$1.7630
  • 250:$1.8470
  • 100:$2.0240
  • 10:$2.2220
  • 1:$2.6840
MJW3281AG
DISTI # MJW3281AGOS-ND		ON SemiconductorTRANS NPN 230V 15A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		5005In Stock
  • 1020:$1.8038
  • 510:$2.1388
  • 120:$2.5124
  • 30:$2.8990
  • 1:$3.4100
MJW3281AG
DISTI # 27607882		ON SemiconductorTrans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		55
  • 10:$2.2220
  • 5:$2.6830
MJW3281AG
DISTI # MJW3281AG		ON SemiconductorTrans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-247 Rail (Alt: MJW3281AG)
RoHS: Compliant
Min Qty: 300		Asia - 1500
  • 30:$9.8100
  • 60:$1.8865
  • 90:$1.8167
  • 150:$1.7518
  • 300:$1.6914
  • 750:$1.6350
  • 1500:$1.6082
MJW3281AG
DISTI # MJW3281AG		ON SemiconductorTrans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: MJW3281AG)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$2.2900
  • 10:$2.0900
  • 25:$2.0900
  • 50:$2.0900
  • 100:$1.8900
  • 500:$1.6900
  • 1000:$1.6900
MJW3281AG
DISTI # 50AC6116		ON SemiconductorTRANSISTOR, NPN, 230V, 15A, TO-247,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:230V,Transition Frequency ft:30MHz,Power Dissipation Pd:200W,DC Collector Current:15A,DC Current Gain hFE:12hFE,Transistor Case RoHS Compliant: Yes98
  • 1:$3.3000
  • 10:$2.8200
MJW3281AG.
DISTI # 15AC3564		ON SemiconductorTransistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:230V,Transition Frequency ft:30MHz,Power Dissipation Pd:200W,DC Collector Current:15A,DC Current Gain hFE:125hFE,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
  • 1:$3.3000
  • 10:$2.8200
MJW3281AGON SemiconductorMJL Series 230 V 15 A PNP Complementary Silicon Power Transistor TO-247
RoHS: Compliant		150Tube
  • 10:$2.8700
  • 50:$2.1800
  • 100:$2.0800
  • 250:$1.9500
  • 500:$1.8600
MJW3281AGON Semiconductor 
RoHS: Not Compliant		3058
  • 1000:$1.8300
  • 500:$1.9300
  • 100:$2.0000
  • 25:$2.0900
  • 1:$2.2500
MJW3281AG
DISTI # 863-MJW3281AG		ON SemiconductorBipolar Transistors - BJT 15A 230V 200W NPN
RoHS: Compliant		1716
  • 1:$3.1100
  • 10:$2.6400
  • 100:$2.2900
  • 250:$2.1700
  • 500:$1.9500
MJW3281A
DISTI # 863-MJW3281A		ON SemiconductorBipolar Transistors - BJT 15A 230V 200W NPN
RoHS: Not compliant		0
    MJW3281AG
    DISTI # 2845316    		ON SemiconductorTRANSISTOR, NPN, 230V, 15A, TO-247
    RoHS: Compliant    		118
    • 1:£2.7300
    • 10:£2.0600
    • 100:£1.7900
    • 250:£1.6900
    • 500:£1.5200
    MJW3281AG
    DISTI # C1S541900354784    		ON SemiconductorTrans GP BJT NPN 230V 15A 200000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		55
    • 10:$2.3390
    • 1:$2.6630
    MJW3281AG
    DISTI # 2845316    		ON SemiconductorTRANSISTOR, NPN, 230V, 15A, TO-247
    RoHS: Compliant    		98
    • 1:$5.4400
    • 30:$4.6300
    • 120:$4.0100
    • 510:$3.4100
    • 1020:$2.8800
    Bild Teil # Beschreibung
    2SC1815

    Mfr.#: 2SC1815

    OMO.#: OMO-2SC1815

    		 Bipolar Transistors - BJT 60Vcbo 50Vceo 5.0V 150mA 400mA 400mW
    TTC004B,Q

    Mfr.#: TTC004B,Q

    OMO.#: OMO-TTC004B-Q

    		 Bipolar Transistors - BJT NPN 2.5A 1.5W 280 HFE 0.5V Trans
    BC549CTA

    Mfr.#: BC549CTA

    OMO.#: OMO-BC549CTA

    		 Bipolar Transistors - BJT NPN 30V 100mA HFE/8
    MJE15030G

    Mfr.#: MJE15030G

    OMO.#: OMO-MJE15030G

    		 Bipolar Transistors - BJT 8A 150V 50W NPN
    MJE15032G

    Mfr.#: MJE15032G

    OMO.#: OMO-MJE15032G

    		 Bipolar Transistors - BJT 8A 250V 50W NPN
    MJW1302AG

    Mfr.#: MJW1302AG

    OMO.#: OMO-MJW1302AG

    		 Bipolar Transistors - BJT 15A 250V 200W PNP
    MJW21195G

    Mfr.#: MJW21195G

    OMO.#: OMO-MJW21195G

    		 Bipolar Transistors - BJT 16A 250V 200W PNP
    MJW21196G

    Mfr.#: MJW21196G

    OMO.#: OMO-MJW21196G

    		 Bipolar Transistors - BJT 16A 250V 200W NPN
    MJE15033G

    Mfr.#: MJE15033G

    OMO.#: OMO-MJE15033G

    		 Bipolar Transistors - BJT 8A 250V 50W PNP
    2SC1815

    Mfr.#: 2SC1815

    OMO.#: OMO-2SC1815-CENTRAL-SEMICONDUCTOR

    		 TRANS NPN 50V 0.15A
    Verfügbarkeit
    Aktie:
    707
    Auf Bestellung:
    2690
    Menge eingeben:
    Der aktuelle Preis von MJW3281AG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,10 $
    3,10 $
    10
    2,63 $
    26,30 $
    100
    2,28 $
    228,00 $
    250
    2,16 $
    540,00 $
    500
    1,94 $
    970,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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