IPP048N12N3GXKSA1

Mfr. #:: IPP048N12N3GXKSA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MV POWER MOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPP048N12N3GXKSA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220-3

Handelsname:: OptiMOS

Verpackung:: Rohr

Höhe:: 15.65 mm

Länge:: 10 mm

Breite:: 4.4 mm

Marke:: Infineon-Technologien

Produktart:: MOSFET

Unterkategorie:: MOSFETs

Teil # Aliase:: G IPP048N12N3 IPP48N12N3GXK SP000652734

Gewichtseinheit:: 0.211644 oz

Tags: IPP048N12N3G, IPP048N12N3, IPP048N1, IPP048, IPP04, IPP0, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP048N12N3GXKSA1 Beschreibung

***ure Electronics: Single N-Channel 120 V 4.8 mOhm 137 nC OptiMOS Power Mosfet - TO-220-3

*** electronic: Transistor MOSFET N-Ch. 100A/120V TO220

***ow.cn: Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-220 Tube

***nell: MOSFET, N-CH, 120V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***ineon SCT: The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO220-3, RoHS

***ineon: The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

***icroelectronics: N-CHANNEL 120V-0.013 OHM-80A TO-220 STripFET II MOSFET

***ical: Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 120 V 18 mO 140 nC Flange Mount STripFET II Power Mosfet - TO-220

***ponent Stockers USA: 80 A 120 V 0.018 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.013Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 120V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 38A TO-220FP

***ure Electronics: N-Channel 100 V 15 mOhm Flange Mount STripFET II Power MOSFET - TO-220

***enic: 100V 80A 300W 15m´Î@10V40A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 100 V 10.5 mO STripFET II MosFet - TO-220

***enic: 100V 110A 312W 10.5m´Î@10V60A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***(Formerly Allied Electronics): MOSFET N-Ch 100V 110A UltraFET II TO220

***r Electronics: Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 312W

***ure Electronics: Single N-Channel 100 V 5.4 mOhm 136 nC OptiMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS

***nell: MOSFET, N CH, 100A, 100V, PG-TO220-3; Transistor Polarity:N; Current Id Max:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.1mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO220; No. of Pins:3; Transistor Type:Power MOSFET

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB

***Yang: Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

*** Electronics: FAIRCHILD SEMICONDUCTOR FDP054N10 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0046 ohm, 10 V, 3.5 V

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ark: 100V 4.5MOHM TO220 3L JEDEC GREEN EMC - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102)

***emi: N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ

***ical: Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Rail

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPP048N12N3GXKSA1 DISTI # V99:2348_06378758	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	475	2500:$2.2990 500:$2.6310 100:$3.1180 25:$3.6290 10:$3.8370 1:$4.7399
IPP048N12N3GXKSA1 DISTI # V36:1790_06378758	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	500000:$1.8360 250000:$1.8390 50000:$2.0920 5000:$2.5440 500:$2.6200
IPP048N12N3GXKSA1 DISTI # IPP048N12N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 120V 100A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	1425In Stock	2500:$2.2007 500:$2.7468 100:$3.2267 25:$3.7232 10:$3.9380 1:$4.3800
IPP048N12N3GXKSA1 DISTI # 28997049	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	500:$1.9343
IPP048N12N3GXKSA1 DISTI # 27551358	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	475	3:$4.7399
IPP048N12N3GXKSA1 DISTI # IPP048N12N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP048N12N3GXKSA1) Min Qty: 178 Container: Bulk	Americas - 0	1780:$1.6900 534:$1.7900 890:$1.7900 356:$1.8900 178:$1.9900
IPP048N12N3GXKSA1 DISTI # IPP048N12N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP048N12N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$1.9900 5000:$1.9900 1000:$2.0900 2000:$2.0900 500:$2.1900
IPP048N12N3GXKSA1 DISTI # IPP048N12N3G	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 (Alt: IPP048N12N3G) RoHS: Compliant Min Qty: 500	Asia - 0
IPP048N12N3GXKSA1 DISTI # SP000652734	Infineon Technologies AG	Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 (Alt: SP000652734) RoHS: Compliant Min Qty: 1	Europe - 0	500:€1.5900 250:€1.7700 100:€1.8600 10:€2.1400 1:€3.1500
IPP048N12N3GXKSA1 DISTI # 50Y2054	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 120 V, 0.0041 ohm, 10 V, 3 V RoHS Compliant: Yes	3	500:$2.6400 250:$2.9400 100:$3.1000 50:$3.2600 25:$3.4200 10:$3.5800 1:$4.2100
IPP048N12N3 G DISTI # 726-IPP048N12N3GXK	Infineon Technologies AG	MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 RoHS: Compliant	324	1:$4.1700 10:$3.5400 100:$3.0700 250:$2.9100 500:$2.6100
IPP048N12N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	431	1000:$1.8600 500:$1.9500 100:$2.0300 25:$2.1200 1:$2.2800
IPP048N12N3GXKSA1 DISTI # 8977440P	Infineon Technologies AG	MOSFET N-CHANNEL 120V 100A OPTIMOS TO220, TU	158	40:£1.6530
IPP048N12N3GXKSA1 DISTI # IPP048N12N3GXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,120V,120A,300W,PG-TO220-3	266	50:$2.2200 10:$2.5600 3:$2.8900 1:$3.2200
IPP048N12N3GXKSA1 DISTI # 2480848	Infineon Technologies AG	MOSFET, N-CH, 120V, 100A, TO-220-3	5	500:£2.0100 250:£2.2400 100:£2.3600 10:£2.7300 1:£3.6000
IPP048N12N3GXKSA1 DISTI # 2480848	Infineon Technologies AG	MOSFET, N-CH, 120V, 100A, TO-220-3 RoHS: Compliant	3	500:$3.9300 250:$4.3900 100:$4.6300 10:$5.3300 1:$6.2800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPP048N12N3 G OMO.#: OMO-IPP048N12N3-G	MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
	Mfr.#: IPP048N12N3GXKSA1 OMO.#: OMO-IPP048N12N3GXKSA1	MOSFET MV POWER MOS
	Mfr.#: IPP048N12N OMO.#: OMO-IPP048N12N-1190	Neu und Original
	Mfr.#: IPP048N12N3 OMO.#: OMO-IPP048N12N3-1190	Neu und Original
	Mfr.#: IPP048N12N3 G OMO.#: OMO-IPP048N12N3-G-1190	Trans MOSFET N-CH 120V 100A 3-Pin TO-220 Tube - Bulk (Alt: IPP048N12N3 G)
	Mfr.#: IPP048N12N3G OMO.#: OMO-IPP048N12N3G-1190	Neu und Original
	Mfr.#: IPP048N12N3G 048N12N OMO.#: OMO-IPP048N12N3G-048N12N-1190	Neu und Original
	Mfr.#: IPP048N12N3GXKSA1 OMO.#: OMO-IPP048N12N3GXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 120V 100A TO220-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von IPP048N12N3GXKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

IPP048N12N3G 4
IPP048N12N3 5
IPP048N1 6
IPP048 12
IPP04 81
IPP0 487
IPP 1415

IPP048N12N3GXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes