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FQU4N50TU-WS

FQU4N50TU-WS
Mfr. #:
FQU4N50TU-WS
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-CH/500V 2.6A/2.7OHM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQU4N50TU-WS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
2.6 A
Rds On - Drain-Source-Widerstand:
2.7 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
6.3 mm
Länge:
6.8 mm
Serie:
FQU4N50TU_WS
Transistortyp:
1 N-Channel
Breite:
2.5 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
5040
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
FQU4N50TU_WS
Gewichtseinheit:
0.012102 oz
Tags
FQU4N50T, FQU4N5, FQU4N, FQU4, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 500 V, 2.6 A, 2.7 Ω, IPAK
***ure Electronics
Single N-Channel 500 V 2.7 Ohm 13 nC 2.5 W DMOS Through Hole Mosfet - TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQU4N50TU-WS
DISTI # FQU4N50TU-WSOS-ND		ON SemiconductorMOSFET N-CH 500V 2.6A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5040In Stock
  • 5000:$0.3579
  • 2500:$0.3768
  • 500:$0.5113
  • 100:$0.6190
  • 25:$0.7536
  • 10:$0.7940
  • 1:$0.8900
FQU4N50TU_WS
DISTI # FQU4N50TU-WS		ON SemiconductorTrans MOSFET N-CH 500V 2.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU4N50TU-WS)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 50400:$0.2829
  • 30240:$0.2899
  • 20160:$0.2939
  • 10080:$0.2979
  • 5040:$0.2999
FQU4N50TU_WS
DISTI # FQU4N50TU_WS		ON SemiconductorTrans MOSFET N-CH 500V 2.6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU4N50TU_WS)
Min Qty: 1
Container: Bulk		Americas - 0
    FQU4N50TU-WS
    DISTI # 48AC1196    		ON SemiconductorQF 500V 2.7OHM IPAK / TUBE0
    • 1000:$0.6060
    • 500:$0.6540
    • 250:$0.7220
    • 100:$0.7950
    • 1:$1.0200
    FQU4N50TU-WSON SemiconductorSingle N-Channel 500 V 2.7 Ohm 13 nC 2.5 W DMOS Through Hole Mosfet - TO-251
    RoHS: Compliant    		456Tube
    • 25:$0.7000
    • 250:$0.4300
    • 1000:$0.3800
    • 2000:$0.3550
    FQU4N50TU-WS
    DISTI # 512-FQU4N50TU_WS    		ON SemiconductorMOSFET N-CH/500V 2.6A/2.7OHM
    RoHS: Compliant    		5020
    • 1:$0.8600
    • 10:$0.7390
    • 100:$0.5680
    • 500:$0.5020
    • 1000:$0.3960
    • 2500:$0.3780
    FQU4N50TU-WS
    DISTI # XSFP00000100086    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		246 in Stock0 on Order
    • 246:$0.5733
    • 233:$0.6143
    Bild Teil # Beschreibung
    SIHU3N50DA-GE3

    Mfr.#: SIHU3N50DA-GE3

    OMO.#: OMO-SIHU3N50DA-GE3

    		 MOSFET 500V Vds 30V Vgs IPAK (TO-251)
    SIHU3N50DA-GE3

    Mfr.#: SIHU3N50DA-GE3

    OMO.#: OMO-SIHU3N50DA-GE3-VISHAY

    		 MOSFET N-CHANNEL 500V 3A IPAK
    HIF6A-20PA-1.27DSA(71)

    Mfr.#: HIF6A-20PA-1.27DSA(71)

    OMO.#: OMO-HIF6A-20PA-1-27DSA-71--HIROSE

    		 Headers & Wire Housings 20P STRT SOCKET T/H NO PCB MT LK CLP GLD
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von FQU4N50TU-WS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,86 $
    0,86 $
    10
    0,74 $
    7,39 $
    100
    0,57 $
    56,80 $
    500
    0,50 $
    251,00 $
    1000
    0,40 $
    396,00 $
    2500
    0,38 $
    945,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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