IRFB4410PBF

Mfr. #:: IRFB4410PBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MOSFT 100V 96A 10mOhm 120nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFB4410PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 96 A

Rds On - Drain-Source-Widerstand:: 8 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 120 nC

Pd - Verlustleistung:: 250 W

Aufbau:: Single

Verpackung:: Rohr

Höhe:: 15.65 mm

Länge:: 10 mm

Transistortyp:: 1 N-Channel

Breite:: 4.4 mm

Marke:: Infineon-Technologien

Produktart:: MOSFET

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001556060

Gewichtseinheit:: 0.211644 oz

Tags: IRFB4410P, IRFB4410, IRFB44, IRFB4, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB4410PBF Beschreibung

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V

***ure Electronics: Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 100V 88A 10mΩ 175°C TO-220 IRFB4410PBF

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J +/-5%

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***(Formerly Allied Electronics): IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB

*** Source Electronics: MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W

***roFlash: Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***eco: Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube

***emi: N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10

***Yang: Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***ure Electronics: N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB

***r Electronics: Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 820A; SMD Marking: FDP3632; Voltage Vgs Max: 4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

***eco: Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de

***ure Electronics: Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): Fairchild HUF75545P3 N-channel MOSFET Transistor; 75 A; 55 V; 3-Pin TO-220AB

***ure Electronics: N-Channel 80 V 0.01 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***emi: N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ

***Yang: Trans MOSFET N-CH 80V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***nell: MOSFET,N CH,80V,75A,TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss

***r Electronics: Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ

***ure Electronics: N-Channel 75 V 6 mOhm Power Trench Mosfet - TO-220

***Yang: Trans MOSFET N-CH 75V 16A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***inecomponents.com: TO220AB, SINGLE, NCH, 75V, 0.0063 OHM POWERTRENCH MOSFET

***enic: 75V 16A 255W 6m´Î@10V80A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFB4410PBF DISTI # V99:2348_13889751	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube	287	2000:$0.8507 1000:$0.9452 500:$1.0502 100:$1.3051 10:$1.8787 1:$2.1595
IRFB4410PBF DISTI # IRFB4410PBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 96A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	1452In Stock	1000:$1.3039 500:$1.5737 100:$2.0233 10:$2.5180 1:$2.7900
IRFB4410PBF DISTI # 31087006	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube	34305	650:$0.8784 250:$0.9168 50:$1.0080
IRFB4410PBF DISTI # 30609309	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube	3000	200:$2.1292 100:$2.4225 50:$2.8560 10:$3.5063 7:$3.9780
IRFB4410PBF DISTI # 26198065	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube	287	100:$1.3051 10:$1.8787 7:$2.1595
IRFB4410PBF DISTI # IRFB4410PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4410PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 741	1:$1.3409 10:$1.1999 25:$1.1969 50:$1.1939 100:$0.9519 500:$0.8299 1000:$0.8269
IRFB4410PBF DISTI # SP001556060	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB (Alt: SP001556060) RoHS: Compliant Min Qty: 1	Europe - 3785	1:€1.3519 10:€1.2099 25:€1.2069 50:€1.2039 100:€0.9599 500:€0.8349 1000:€0.7519
IRFB4410PBF DISTI # IRFB4410PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4410PBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRFB4410PBF DISTI # 97K1977	Infineon Technologies AG	MOSFET Transistor, N Channel, 96 A, 100 V, 0.008 ohm, 20 V, 4 V RoHS Compliant: Yes	1189	1:$2.6500 10:$2.2600 100:$1.8000 500:$1.5800 1000:$1.3100 2500:$1.2200
IRFB4410PBF. DISTI # 27AC6769	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:96A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4V,Power Dissipation Pd:250W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$2.6500 10:$2.2600 100:$1.8000 500:$1.5800 1000:$1.3100 2500:$1.2200
IRFB4410PBF DISTI # 70017255	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 8 Milliohms,ID 88A,TO-220AB,PD 200W,VF 1.3V RoHS: Compliant	0	3000:$4.9300
IRFB4410PBF DISTI # 942-IRFB4410PBF	Infineon Technologies AG	MOSFET MOSFT 100V 96A 10mOhm 120nC RoHS: Compliant	1140	1:$2.4100 10:$2.0500 100:$1.6400 500:$1.4400 1000:$1.1900 2000:$1.1100
IRFB4410PBF	International Rectifier	Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	1102	1000:$1.0800 500:$1.1400 100:$1.1800 25:$1.2300 1:$1.3300
IRFB4410PBF	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	21
IRFB4410PBF DISTI # 6504766P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 88A TO220AB, TU	2855	25:£0.5300
IRFB4410PBF DISTI # 6504766	Infineon Technologies AG	MOSFET N-CHANNEL 100V 88A TO220AB, PK	275	5:£0.5620 25:£0.5300
IRFB4410PBF DISTI # IRFB4410PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,96A,250W,TO220AB	405	1:$1.3800 3:$1.2500 10:$1.0300 50:$0.9100
IRFB4410PBF DISTI # TMOSP12129	Infineon Technologies AG	N-CH 100V 96A 10mOhm TO220-3 RoHS: Compliant	Stock DE - 1150Stock US - 0	50:$1.0740 150:$1.0120 250:$0.9509 550:$0.8588 1250:$0.8282
IRFB4410PBF	Infineon Technologies AG	INSTOCK	2932
IRFB4410PBF DISTI # C1S322000600021	Infineon Technologies AG	MOSFETs	3000	2000:$1.6000 200:$1.6700 100:$1.9000 50:$2.2400 10:$2.7500 1:$3.1200
IRFB4410PBF DISTI # C1S322000488809	Infineon Technologies AG	MOSFETs	287	100:$1.3051 10:$1.8787
IRFB4410PBF DISTI # 9052046	Infineon Technologies AG	MOSFET, N, 100V, TO-220 RoHS: Compliant	1331	1:£1.7500 10:£1.4500 100:£1.3000 250:£1.2000 500:£1.1200
IRFB4410PBF DISTI # XSKDRABV0030608	INF	RoHS: Compliant	50	650:$1.0700
IRFB4410PBF DISTI # 9052046	Infineon Technologies AG	MOSFET, N, 100V, TO-220 RoHS: Compliant	192	1:$3.8200 10:$3.2500 100:$2.6000 500:$2.2800 1000:$1.8800 2000:$1.7600

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von IRFB4410PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,40 $~~; ~~2,40 $~~

10: ~~2,04 $~~; ~~20,40 $~~

100: ~~1,63 $~~; ~~163,00 $~~

500: ~~1,43 $~~; ~~715,00 $~~

1000: ~~1,18 $~~; ~~1 180,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRFB4410PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes