CY7C1170KV18-550BZC

CY7C1170KV18-550BZC
Mfr. #:
CY7C1170KV18-550BZC
Hersteller:
Cypress Semiconductor
Beschreibung:
SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CY7C1170KV18-550BZC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CY7C1170KV18-550BZC Mehr Informationen CY7C1170KV18-550BZC Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
SRAM
RoHS:
N
Speichergröße:
18 Mbit
Organisation:
512 k x 36
Zugriffszeit:
-
Maximale Taktfrequenz:
550 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
820 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
FBGA-165
Verpackung:
Tablett
Speichertyp:
Flüchtig
Serie:
CY7C1170KV18
Typ:
Synchron
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
136
Unterkategorie:
Speicher & Datenspeicherung
Tags
CY7C1170K, CY7C117, CY7C11, CY7C1, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ure Electronics
CY7C2170KV Series 18 Mb (1M x 18) 550 MHz 1.8 V DDR II+ SRAM - FBGA-165
***ical
SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II+, 18432 Kb Density, 550 MHz Frequency, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et Europe
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***I SCT
1Mx18, 250Mhz, SRAM, FBGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***enic
LFBGA-165(15x17) SRAM ROHS
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Teil # Mfg. Beschreibung Aktie Preis
CY7C1170KV18-550BZC
DISTI # V36:1790_07838833
Cypress SemiconductorSRAM Chip Sync Single 1.8V 18M-bit 512K x 36 0.45ns 165-Pin FBGA Tray0
    CY7C1170KV18-550BZC
    DISTI # CY7C1170KV18-550BZC-ND
    Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
    RoHS: Not compliant
    Min Qty: 136
    Container: Tray
    Temporarily Out of Stock
    • 136:$47.7150
    CY7C1170KV18-550BZC
    DISTI # 727-7C1170KV18550BZC
    Cypress SemiconductorSRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
    RoHS: Not compliant
    0
    • 136:$45.8700
    CY7C1170KV18-550BZCCypress SemiconductorStandard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
    RoHS: Not Compliant
    246
    • 1000:$54.1800
    • 500:$57.0400
    • 100:$59.3800
    • 25:$61.9300
    • 1:$66.6900
    Bild Teil # Beschreibung
    CY7C1170KV18-400BZC

    Mfr.#: CY7C1170KV18-400BZC

    OMO.#: OMO-CY7C1170KV18-400BZC

    SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
    CY7C1170KV18-450BZXC

    Mfr.#: CY7C1170KV18-450BZXC

    OMO.#: OMO-CY7C1170KV18-450BZXC

    SRAM 18MB (512Kx36) 1.8v 450MHz DDR II SRAM
    CY7C1170KV18-550BZC

    Mfr.#: CY7C1170KV18-550BZC

    OMO.#: OMO-CY7C1170KV18-550BZC

    SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
    CY7C1170KV18-400BZXC

    Mfr.#: CY7C1170KV18-400BZXC

    OMO.#: OMO-CY7C1170KV18-400BZXC

    SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
    CY7C1170KV18-400BZXC

    Mfr.#: CY7C1170KV18-400BZXC

    OMO.#: OMO-CY7C1170KV18-400BZXC-CYPRESS-SEMICONDUCTOR

    IC SRAM 18M PARALLEL 165FBGA
    CY7C1170KV18-550BZC

    Mfr.#: CY7C1170KV18-550BZC

    OMO.#: OMO-CY7C1170KV18-550BZC-CYPRESS-SEMICONDUCTOR

    SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
    CY7C1170KV18-400BZC

    Mfr.#: CY7C1170KV18-400BZC

    OMO.#: OMO-CY7C1170KV18-400BZC-CYPRESS-SEMICONDUCTOR

    SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
    CY7C1170KV18-450BZXC

    Mfr.#: CY7C1170KV18-450BZXC

    OMO.#: OMO-CY7C1170KV18-450BZXC-CYPRESS-SEMICONDUCTOR

    SRAM 18MB (512Kx36) 1.8v 450MHz DDR II SRAM
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von CY7C1170KV18-550BZC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    136
    45,87 $
    6 238,32 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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