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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK952R8-30B,127 DISTI # 568-6633-5-ND | Nexperia | MOSFET N-CH 30V 75A TO220AB RoHS: Compliant Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| BUK952R8-30B127 DISTI # BUK952R8-30B127 | Avnet, Inc. | - Bulk (Alt: BUK952R8-30B127) Min Qty: 439 Container: Bulk | Americas - 0 |
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| BUK952R8-30B,127 DISTI # 771-BUK952R8-30B127 | Nexperia | MOSFET HIGH PERF TRENCHMOS RoHS: Compliant | 0 | |
| BUK952R8-30B127 | NXP Semiconductors | Now Nexperia BUK952R8-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 199 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUK9520-55,127 |
MOSFET N-CH 55V 52A TO220AB |
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Mfr.#: BUK9528-100A,127 |
MOSFET N-CH 100V 49A TO220AB |
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Mfr.#: BUK9529-100B,127 |
MOSFET N-CH 100V 46A TO220AB |
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Mfr.#: BUK952R3-40E,127 |
MOSFET N-CH 40V 120A TO220AB |
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Mfr.#: BUK9520-100B127 OMO.#: OMO-BUK9520-100B127-1190 |
Now Nexperia BUK9520-100B - Power Field-Effect Transistor, 63A I(D), 100V, 0.0223ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK9520-55A127 OMO.#: OMO-BUK9520-55A127-1190 |
Now Nexperia BUK9520-55A - Power Field-Effect Transistor, 54A I(D), 55V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK9528-100A OMO.#: OMO-BUK9528-100A-1190 |
Neu und Original |
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Mfr.#: BUK952R8-60E127 OMO.#: OMO-BUK952R8-60E127-1190 |
- Bulk (Alt: BUK952R8-60E127) |
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Mfr.#: BUK9520-100B,127 |
IGBT Transistors MOSFET N-CHAN 100V 63A |
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Mfr.#: BUK9520-100A,127 |
RF Bipolar Transistors MOSFET RAIL PWR-MOS |