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IRG4IBC20UDPBF

IRG4IBC20UDPBF
Mfr. #:
IRG4IBC20UDPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V UltraFast 8-60kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4IBC20UDPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4IBC20UDPBF DatasheetIRG4IBC20UDPBF Datasheet (P4-P6)IRG4IBC20UDPBF Datasheet (P7-P9)IRG4IBC20UDPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.081130 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3 Full Pack
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB Full-Pak
Aufbau
Single
Leistung max
34W
Reverse-Recovery-Time-trr
37ns
Strom-Kollektor-Ic-Max
11.4A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
52A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 6.5A
Schaltenergie
160μJ (on), 130μJ (off)
Gate-Gebühr
27nC
Td-ein-aus-25°C
39ns/93ns
Testbedingung
480V, 6.5A, 50 Ohm, 15V
Pd-Verlustleistung
34 W
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.1 V
Kontinuierlicher Kollektorstrom-bei-25-C
11.4 A
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
IRG4IBC20U, IRG4IBC2, IRG4IBC, IRG4IB, IRG4I, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 11.4A 34000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***ernational Rectifier
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
***ure Electronics
N Channel 600 V 34 W 27 nC Flange Mount UltraFast CoPack IGBT - TO-220FP
***nell
IGBT, TO-220 FULLPAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:11.4A; Voltage, Vce Sat Max:1.85V; Power Dissipation:34W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:52A; No. of Pins:3; Power, Pd:34W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:220ns; Time, Rise:17ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF7NC60HD Series 600 V 10 A N-Channel Very Fast PowerMESH IGBT - TO-220FP
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UD series si designed for applications such as motor control and general inverters where high speed switching is a required feature.
***et
IGBT 600V 8A 35W TO220F
***i-Key
IGBT SHORT CIRC 600V 5A TO-220F
***i-Key Marketplace
IGBT, 8A, 600V, N-CHANNEL
***el Electronic
RES 4.7K OHM 1% 1/16W 0402
***ser
IGBTs 600V/5A/w/FRD
***et
Motor / Motion / Ignition Controllers & Drivers 600V/6.5A/w/FRD
***i-Key
IGBT 600V 13A 45W TO220F
***i-Key Marketplace
IGBT, 13A, 600V, N-CHANNEL
***ser
IGBTs 600V/6.5A/w/FRD
***p One Stop Global
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
10 A, 600 V, fast IGBT with Ultrafast diode
***ical
Trans IGBT Chip N-CH 650V 14A 33300mW 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
650 V, 15 A IGBT with anti-parallel diode in TO-247 package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 33.3W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Teil # Mfg. Beschreibung Aktie Preis
IRG4IBC20UDPBF
DISTI # IRG4IBC20UDPBF-ND		Infineon Technologies AGIGBT 600V 11.4A 34W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube		Limited Supply - Call
    IRG4IBC20UDPBF
    DISTI # 63J7500    		Infineon Technologies AGSINGLE IGBT, 600V, 11.4A,DC Collector Current:11.4A,Collector Emitter Saturation Voltage Vce(on):2.27V,Power Dissipation Pd:34W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes89
    • 1:$1.2000
    • 10:$1.2000
    • 25:$1.2000
    • 50:$1.2000
    • 100:$1.2000
    • 250:$1.2000
    • 500:$1.2000
    IRG4IBC20UDPBF
    DISTI # 70018443    		Infineon Technologies AG600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-220 FULLPAK PACKAGE
    RoHS: Compliant    		0
    • 700:$3.2100
    • 1400:$3.1460
    • 3500:$3.0500
    • 7000:$2.9210
    • 17500:$2.7290
    IRG4IBC20UDPBF
    DISTI # 942-IRG4IBC20UDPBF    		Infineon Technologies AGIGBT Transistors 600V UltraFast 8-60kHz
    RoHS: Compliant    		560
    • 1:$2.8100
    • 10:$2.3900
    • 100:$1.9100
    • 500:$1.6700
    • 1000:$1.3900
    IRG4IBC20UDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		1862
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    IRG4IBC20UDPBFInternational RectifierInsulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		273400
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    IRG4IBC20UDPBF
    DISTI # IRG4IBC20UDPBF    		Infineon Technologies AGTransistor: IGBT,600V,11.4A,34W,TO220AB203
    • 1:$1.7400
    • 3:$1.5600
    • 10:$1.2300
    • 50:$1.1000
    Bild Teil # Beschreibung
    IRG4IBC30WPBF

    Mfr.#: IRG4IBC30WPBF

    OMO.#: OMO-IRG4IBC30WPBF

    		 IGBT Transistors 600V Warp 60-150kHz
    IRG4IBC10UDPBF

    Mfr.#: IRG4IBC10UDPBF

    OMO.#: OMO-IRG4IBC10UDPBF

    		 IGBT Transistors 600V UltraFast 8-60kHz
    IRG4IBC20KD

    Mfr.#: IRG4IBC20KD

    OMO.#: OMO-IRG4IBC20KD-INFINEON-TECHNOLOGIES

    		 IGBT 600V 11.5A 34W TO220FP
    IRG4IBC20KDPBF.

    Mfr.#: IRG4IBC20KDPBF.

    OMO.#: OMO-IRG4IBC20KDPBF--1190

    		 Neu und Original
    IRG4IBC20UDPBF.

    Mfr.#: IRG4IBC20UDPBF.

    OMO.#: OMO-IRG4IBC20UDPBF--1190

    		 Neu und Original
    IRG4IBC30FD

    Mfr.#: IRG4IBC30FD

    OMO.#: OMO-IRG4IBC30FD-INFINEON-TECHNOLOGIES

    		 IGBT 600V 20.3A 45W TO220FP
    IRG4IBC30KD

    Mfr.#: IRG4IBC30KD

    OMO.#: OMO-IRG4IBC30KD-INFINEON-TECHNOLOGIES

    		 IGBT 600V 17A 45W TO220FP
    IRG4IBC30S,IRG4IBC30SPBF

    Mfr.#: IRG4IBC30S,IRG4IBC30SPBF

    OMO.#: OMO-IRG4IBC30S-IRG4IBC30SPBF-1190

    		 Neu und Original
    IRG4IBC30W

    Mfr.#: IRG4IBC30W

    OMO.#: OMO-IRG4IBC30W-INFINEON-TECHNOLOGIES

    		 IGBT 600V 17A 45W TO220FP
    IRG4IBC40UD

    Mfr.#: IRG4IBC40UD

    OMO.#: OMO-IRG4IBC40UD-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IRG4IBC20UDPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,66 $
    1,66 $
    10
    1,58 $
    15,82 $
    100
    1,50 $
    149,85 $
    500
    1,42 $
    707,65 $
    1000
    1,33 $
    1 332,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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