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SI5922DU-T1-GE3

SI5922DU-T1-GE3
Mfr. #:
SI5922DU-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET 2 N-CH 30V 6A POWERPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5922DU-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5922DU-T1-GE3 DatasheetSI5922DU-T1-GE3 Datasheet (P4-P6)SI5922DU-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI592, SI59, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 19.2 mOhm 10.4 W TrenchFET Mosfet -PowerPAK ChipFET Dual
***ical
Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK ChipFET T/R
***et Europe
MOSFET Dual N-Channel 30V 6A 8-Pin PowerPAK T/R
***i-Key
MOSFET 2 N-CH 30V 6A POWERPAK
***ark
Mosfet, Dual N-Ch, 30V, Powerpak Chipfet; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:10.4W; Transistor Case Style:PowerPAK ChipFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, DOPPIO CA-N 30V POWERPAK CHIPFET; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0155ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:10.4W; Modello Case Transistor:PowerPAK ChipFET; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
SI5922DU-T1-GE3
DISTI # V72:2272_17597373		Vishay IntertechnologiesDual N-Channel 30 V (D-S) MOSFET5817
  • 75000:$0.1569
  • 30000:$0.1749
  • 15000:$0.1928
  • 6000:$0.2108
  • 3000:$0.2287
  • 1000:$0.2467
  • 500:$0.2647
  • 250:$0.2826
  • 100:$0.3006
  • 50:$0.4081
  • 25:$0.4122
  • 10:$0.4622
  • 1:$0.6058
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 30V 6A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1311In Stock
  • 1000:$0.2160
  • 500:$0.2796
  • 100:$0.3558
  • 10:$0.4770
  • 1:$0.5600
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 6A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1311In Stock
  • 1000:$0.2160
  • 500:$0.2796
  • 100:$0.3558
  • 10:$0.4770
  • 1:$0.5600
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 6A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1579
  • 15000:$0.1666
  • 6000:$0.1789
  • 3000:$0.1912
SI5922DU-T1-GE3
DISTI # 25817691		Vishay IntertechnologiesDual N-Channel 30 V (D-S) MOSFET5817
  • 43:$0.6058
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3		Vishay IntertechnologiesMOSFET Dual N-Channel 30V 6A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SI5922DU-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.1499
  • 30000:$0.1539
  • 18000:$0.1589
  • 12000:$0.1649
  • 6000:$0.1709
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3		Vishay IntertechnologiesMOSFET Dual N-Channel 30V 6A 8-Pin PowerPAK T/R (Alt: SI5922DU-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 500:€1.5900
  • 1000:€1.5900
  • 50:€1.6900
  • 100:€1.6900
  • 25:€1.8900
  • 10:€2.2900
  • 1:€2.9900
SI5922DU-T1-GE3
DISTI # 20AC3931		Vishay IntertechnologiesDUAL N-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.1520
  • 30000:$0.1590
  • 20000:$0.1710
  • 10000:$0.1830
  • 5000:$0.1980
  • 1:$0.2030
SI5922DU-T1-GE3
DISTI # 99Y9656		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes89
  • 500:$1.5800
  • 250:$1.6800
  • 100:$1.8000
  • 50:$1.9200
  • 25:$2.0500
  • 10:$2.1700
  • 1:$2.3000
SI5922DU-T1-GE3
DISTI # 78-SI5922DU-T1-GE3		Vishay IntertechnologiesMOSFET N-Ch 30V Vds 4.7nC Qg Typ
RoHS: Compliant		2857
  • 1:$0.5600
  • 10:$0.4250
  • 100:$0.3150
  • 500:$0.2590
  • 1000:$0.2000
  • 3000:$0.1830
  • 6000:$0.1710
  • 9000:$0.1590
  • 24000:$0.1530
SI5922DU-T1-GE3
DISTI # 2663705		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET
RoHS: Compliant		89
  • 1:$2.5500
SI5922DU-T1-GE3
DISTI # 2663705		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET50
  • 500:£1.4200
  • 250:£1.5200
  • 100:£1.6500
  • 10:£1.8500
  • 1:£2.2200
Bild Teil # Beschreibung
SI5922DU-T1-GE3

Mfr.#: SI5922DU-T1-GE3

OMO.#: OMO-SI5922DU-T1-GE3-VISHAY

 MOSFET 2 N-CH 30V 6A POWERPAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von SI5922DU-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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