OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXFH18N90P

IXFH18N90P
Mfr. #:
IXFH18N90P
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH18N90P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFH18N90P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
FETs - Einzeln
Serie
IXFH18N90
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
540 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
44 ns
Anstiegszeit
33 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
18 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V to 6 V
Rds-On-Drain-Source-Widerstand
600 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
60 ns
Typische-Einschaltverzögerungszeit
40 ns
Qg-Gate-Ladung
97 nC
Vorwärts-Transkonduktanz-Min
10 S
Kanal-Modus
Erweiterung
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247
***pNet
N CH POLAR PMOS HiPerFET, 900V, 18A, TO-247
***ment14 APAC
MOSFET,N CH,900V,18A,TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:900V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:540W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:18A; Power Dissipation Pd:540W; Voltage Vgs Max:30V
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFH18N90P
DISTI # V99:2348_15877383		IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.2550
  • 500:$5.5250
  • 250:$6.0450
  • 100:$6.5820
  • 50:$6.7690
  • 25:$7.2560
  • 10:$8.4930
  • 1:$10.2311
IXFH18N90P
DISTI # IXFH18N90P-ND		IXYS CorporationMOSFET N-CH TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$7.6877
IXFH18N90P
DISTI # 25894581		IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.6491
  • 500:$5.9394
  • 250:$6.4984
  • 100:$7.0757
  • 50:$7.2767
  • 25:$7.8002
  • 10:$9.1300
  • 2:$9.9986
IXFH18N90P
DISTI # 747-IXFH18N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		440
  • 1:$10.7800
  • 10:$9.7000
  • 25:$8.0700
  • 50:$7.5000
  • 100:$7.3300
  • 250:$6.7000
  • 500:$6.1000
  • 1000:$5.8200
Bild Teil # Beschreibung
IXFH110N10P

Mfr.#: IXFH110N10P

OMO.#: OMO-IXFH110N10P

 MOSFET 110 Amps 100V 0.015 Rds
IXFH14N60P

Mfr.#: IXFH14N60P

OMO.#: OMO-IXFH14N60P

 MOSFET 600V 14A
IXFH16N50P3

Mfr.#: IXFH16N50P3

OMO.#: OMO-IXFH16N50P3

 MOSFET Polar3 HiPerFET Power MOSFET
IXFH102N15T

Mfr.#: IXFH102N15T

OMO.#: OMO-IXFH102N15T

 MOSFET 102 Amps 0V
IXFH15N60

Mfr.#: IXFH15N60

OMO.#: OMO-IXFH15N60

 MOSFET 15 Amps 600V
IXFH13N90

Mfr.#: IXFH13N90

OMO.#: OMO-IXFH13N90

 MOSFET 13 Amps 900V 0.8 Rds
IXFH170N10P

Mfr.#: IXFH170N10P

OMO.#: OMO-IXFH170N10P-IXYS-CORPORATION

 Darlington Transistors MOSFET 170 Amps 100V 0.009 Rds
IXFH12N100

Mfr.#: IXFH12N100

OMO.#: OMO-IXFH12N100-IXYS-CORPORATION

 MOSFET 1KV 12A
IXFH17N80Q

Mfr.#: IXFH17N80Q

OMO.#: OMO-IXFH17N80Q-IXYS-CORPORATION

 MOSFET 17 Amps 800V 0.60 Rds
IXFH15N60

Mfr.#: IXFH15N60

OMO.#: OMO-IXFH15N60-IXYS-CORPORATION

 MOSFET 15 Amps 600V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IXFH18N90P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,88 $
7,88 $
10
7,49 $
74,88 $
100
7,09 $
709,43 $
500
6,70 $
3 350,05 $
1000
6,31 $
6 306,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top