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STB36N60M6

STB36N60M6
Mfr. #:
STB36N60M6
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB36N60M6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB36N60M6 Mehr Informationen STB36N60M6 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
D2PAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
85 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.25 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
44.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Serie:
STB36N60M6
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
7.3 ns
Produktart:
MOSFET
Anstiegszeit:
5.3 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50.2 ns
Typische Einschaltverzögerungszeit:
15.2 ns
Tags
STB36, STB3, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
N-channel 600V, 85mΩ typ., 30A MDmesh M6 Power MOSFET in a D²PAK package
***ical
Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R
***ark
STPOWER N-CHANNEL MOSFETS > 350 V TO 700 V
***nell
MOSFET, N-CH, 600V, 30A, 150DEG C, 208W; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 30A, 150DEG C, 208W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:208W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ M6 MOSFETs
STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Qg) with an optimized capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh™ M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for operation at high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V and are available in a wide range of packaging options including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications including chargers, adapters, silver box modules, LED lighting, telecom, server and solar.
Teil # Mfg. Beschreibung Aktie Preis
STB36N60M6
DISTI # V72:2272_18454206		STMicroelectronicsPTD HIGH VOLTAGE1000
  • 1000:$1.9970
  • 500:$2.3640
  • 250:$2.5270
  • 100:$2.6870
  • 25:$3.1310
  • 10:$3.1940
  • 1:$4.1294
STB36N60M6
DISTI # 497-18734-1-ND		STMicroelectronicsD2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		978In Stock
  • 500:$2.5583
  • 100:$3.0052
  • 10:$3.6680
  • 1:$4.0800
STB36N60M6
DISTI # 497-18734-6-ND		STMicroelectronicsD2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		978In Stock
  • 500:$2.5583
  • 100:$3.0052
  • 10:$3.6680
  • 1:$4.0800
STB36N60M6
DISTI # 497-18734-2-ND		STMicroelectronicsD2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.9152
  • 2000:$1.9900
  • 1000:$2.0947
STB36N60M6
DISTI # 33360136		STMicroelectronicsPTD HIGH VOLTAGE1000
  • 4:$4.1294
STB36N60M6
DISTI # STB36N60M6		STMicroelectronicsN-channel 600V, 85mΩ typ., 30A MDmesh M6 Power MOSFET in a D²PAK package - Tape and Reel (Alt: STB36N60M6)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 3000
  • 10000:$1.8199
  • 6000:$1.8579
  • 4000:$1.9441
  • 2000:$2.0357
  • 1000:$2.1364
STB36N60M6
DISTI # STB36N60M6		STMicroelectronicsN-channel 600V, 85mΩ typ., 30A MDmesh M6 Power MOSFET in a D²PAK package (Alt: STB36N60M6)
RoHS: Compliant
Min Qty: 1
Container: Package		Europe - 0
  • 1000:€2.6900
  • 500:€2.8900
  • 100:€3.0900
  • 50:€3.1900
  • 25:€3.2900
  • 10:€3.3900
  • 1:€3.7900
STB36N60M6
DISTI # 94AC2211		STMicroelectronicsMOSFET, N-CH, 600V, 30A, 150DEG C, 208W,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes143
  • 1000:$2.6600
  • 500:$2.7500
  • 250:$2.8400
  • 100:$3.0800
  • 50:$3.3000
  • 25:$3.5200
  • 10:$3.7300
  • 1:$4.0100
STB36N60M6
DISTI # 511-STB36N60M6		STMicroelectronicsMOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package
RoHS: Compliant		950
  • 1:$3.7800
  • 10:$3.2100
  • 100:$2.7800
  • 250:$2.6400
  • 500:$2.3700
  • 1000:$2.0000
  • 2000:$1.9000
STB36N60M6
DISTI # 2987018		STMicroelectronicsMOSFET, N-CH, 600V, 30A, 150DEG C, 208W
RoHS: Compliant		143
  • 1000:$4.6300
  • 500:$5.5600
  • 250:$6.1400
  • 100:$6.4600
  • 10:$7.4500
  • 1:$9.5100
STB36N60M6
DISTI # 2987018		STMicroelectronicsMOSFET, N-CH, 600V, 30A, 150DEG C, 208W173
  • 500:£2.3500
  • 250:£2.3600
  • 100:£2.3700
  • 10:£2.3800
  • 1:£3.1000
Bild Teil # Beschreibung
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OMO.#: OMO-LM3481MM-NOPB

 Switching Controllers HI EFF LOW-SIDE N CH CONTROLLER
LMV358AIDR

Mfr.#: LMV358AIDR

OMO.#: OMO-LMV358AIDR-TEXAS-INSTRUMENTS

 Op Amp Dual GP R-R O/P ±2.75V/5.5V 8-Pin SOIC T/R
DSPIC33CK64MP206-I/PT

Mfr.#: DSPIC33CK64MP206-I/PT

OMO.#: OMO-DSPIC33CK64MP206-I-PT-MICROCHIP-TECHNOLOGY

 16 Bit DSC, 64KB Flash, 8KB RAM, 100MHz, 28Pin, 3 OpAmp, 3 Comp, PTG
LM3481MM/NOPB

Mfr.#: LM3481MM/NOPB

OMO.#: OMO-LM3481MM-NOPB-TEXAS-INSTRUMENTS

 Switching Controllers HI EFF LOW-SIDE N CH CONTROLLER
Verfügbarkeit
Aktie:
938
Auf Bestellung:
2921
Menge eingeben:
Der aktuelle Preis von STB36N60M6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,78 $
3,78 $
10
3,21 $
32,10 $
100
2,78 $
278,00 $
250
2,64 $
660,00 $
500
2,37 $
1 185,00 $
1000
2,00 $
2 000,00 $
2000
1,90 $
3 800,00 $
5000
1,83 $
9 150,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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