SISH108DN-T1-GE3

SISH108DN-T1-GE3
Mfr. #:
SISH108DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH108DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISH108DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
4.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
88 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SISH10, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH108DN-T1-GE3
DISTI # V99:2348_22831165
Vishay IntertechnologiesSISH108DN-T1-GE36000
  • 3000:$0.2024
  • 1000:$0.2249
  • 500:$0.2869
  • 100:$0.3855
  • 10:$0.5574
  • 1:$0.6578
SISH108DN-T1-GE3
DISTI # SISH108DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6050In Stock
  • 1000:$0.2046
  • 500:$0.2648
  • 100:$0.3370
  • 10:$0.4510
  • 1:$0.5300
SISH108DN-T1-GE3
DISTI # SISH108DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6050In Stock
  • 1000:$0.2046
  • 500:$0.2648
  • 100:$0.3370
  • 10:$0.4510
  • 1:$0.5300
SISH108DN-T1-GE3
DISTI # SISH108DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 30000:$0.1558
  • 15000:$0.1578
  • 6000:$0.1695
  • 3000:$0.1811
SISH108DN-T1-GE3
DISTI # 33140901
Vishay IntertechnologiesSISH108DN-T1-GE36000
  • 24000:$0.1480
  • 9000:$0.1639
  • 6000:$0.1821
  • 3000:$0.2024
  • 1000:$0.2249
  • 500:$0.2869
  • 100:$0.3855
  • 45:$0.5574
SISH108DN-T1-GE3
DISTI # 99AC9580
Vishay IntertechnologiesMOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes50
  • 1000:$0.2910
  • 500:$0.3640
  • 250:$0.4020
  • 100:$0.4400
  • 50:$0.4870
  • 25:$0.5340
  • 10:$0.5810
  • 1:$0.7170
SISH108DN-T1-GE3
DISTI # 78-SISH108DN-T1-GE3
Vishay IntertechnologiesMOSFET 20V Vds,20/-16V Vgs PowerPAK 1212-8SH
RoHS: Compliant
5890
  • 1:$0.7100
  • 10:$0.5740
  • 100:$0.4350
  • 500:$0.3600
  • 1000:$0.2880
  • 3000:$0.2600
  • 6000:$0.2430
  • 9000:$0.2340
  • 24000:$0.2250
SISH108DN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds,20/-16V Vgs PowerPAK 1212-8SHAmericas -
    SISH108DN-T1-GE3
    DISTI # 3019126
    Vishay IntertechnologiesMOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W
    RoHS: Compliant
    50
    • 5000:$0.4620
    • 1000:$0.4860
    • 500:$0.6190
    • 250:$0.6920
    • 100:$0.7600
    • 25:$1.0300
    • 5:$1.1200
    SISH108DN-T1-GE3
    DISTI # 3019126
    Vishay IntertechnologiesMOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W50
    • 500:£0.2120
    • 250:£0.2490
    • 100:£0.2860
    • 25:£0.3970
    • 5:£0.4260
    Bild Teil # Beschreibung
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    ESP32-WROOM-32

    Mfr.#: ESP32-WROOM-32

    OMO.#: OMO-ESP32-WROOM-32

    WiFi Modules (802.11) SMD Module, ESP32-D0WDQ6, 32Mbits SPI flash, UART
    ESP32-WROOM-32D

    Mfr.#: ESP32-WROOM-32D

    OMO.#: OMO-ESP32-WROOM-32D

    WiFi Modules (802.11) SMD Module, ESP32-D0WD, 32Mbits SPI flash, UART mode,
    ESP32-WROOM-32

    Mfr.#: ESP32-WROOM-32

    OMO.#: OMO-ESP32-WROOM-32-ESPRESSIF-SYSTEMS

    SMD MODULE, ESP32-D0WDQ6, 32MBIT
    TPS563201DDCR

    Mfr.#: TPS563201DDCR

    OMO.#: OMO-TPS563201DDCR-TEXAS-INSTRUMENTS

    Conv DC-DC 4.5V to 17V Synchronous Step Down Single-Out 0.76V to 7V 3A 6-Pin TSOT-23 T/R
    CMS-181325-078S

    Mfr.#: CMS-181325-078S

    OMO.#: OMO-CMS-181325-078S-CUI

    speaker, 18 x 13 mm, 2.5 mm deep, mylar, Nd-Fe-B, .7 W, 8 ohm, 1100 Hz, spring contacts
    TLV75733PDBVR

    Mfr.#: TLV75733PDBVR

    OMO.#: OMO-TLV75733PDBVR-TEXAS-INSTRUMENTS

    IC REG LINEAR 3.3V 1A SOT23-5
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SISH108DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,71 $
    0,71 $
    10
    0,57 $
    5,74 $
    100
    0,44 $
    43,50 $
    500
    0,36 $
    180,00 $
    1000
    0,29 $
    288,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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