2N5116-E3

2N5116-E3
Mfr. #:
2N5116-E3
Hersteller:
Vishay Semiconductors
Beschreibung:
JFET 30V 10pA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5116-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
JFET
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TO-206AA
Polarität des Transistors:
P-Kanal
Aufbau:
Single
Vgs - Gate-Source-Durchbruchspannung:
30 V
Verpackung:
Schüttgut
Typ:
JFET
Marke:
Vishay Semiconductors
Werkspackungsmenge:
200
Tags
2N5116, 2N511, 2N51, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans JFET P-CH 3-Pin TO-206AA
***ser
P-Channel FETs 30V 10pA
***i-Key
JFET P-CH 30V TO-18
***et
TO18 PCH JFET
***ark
Transistors - JFET; Transistor Polarity:Dual P Channel; Package/Case:TO-206AA; Continuous Drain Current, Id:-25mA; Current Rating:-50mA; Gate-Source Breakdown Voltage:30V; Gate-Source Cutoff Voltage:4V; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***ment14 APAC
P CHANNEL JFET, 45V, TO-206AA; Transisto; P CHANNEL JFET, 45V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:45V; Gate-Source Cutoff Voltage Vgs(off) Max:4V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +200°C; No. of Pins:3; Current Rating:-50mA
***nell
JFET, CANALE P, 30V, TO-206AA-3; Tensione di Rottura Vbr:30V; Corrente Drain Min a Tensione Gate Nulla Idss:-5mA; Corrente Drain Max a Tensione Gate Nulla Idss:-25mA; Tensione di Cutoff Gate-Source Vgs (off) Max:4V; Modello Case Transistor:TO-206AA; Tipo di Transistor:JFET; Numero di Pin:3 Pin; Temperatura di Esercizio Max:200°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-
Teil # Mfg. Beschreibung Aktie Preis
2N5116-E3
DISTI # 2N5116-E3-ND
Vishay SiliconixJFET P-CH 30V TO-18
RoHS: Compliant
Min Qty: 200
Container: Tube
Limited Supply - Call
    2N5116-E3
    DISTI # 781-2N5116-E3
    Vishay IntertechnologiesJFET 30V 10pA
    RoHS: Compliant
    0
      2N5116-E3
      DISTI # 2547293
      Vishay IntertechnologiesJFET, P CHANNEL, 30V, TO-206AA-3
      RoHS: Compliant
      0
      • 500:$112.7000
      • 200:$116.5200
      • 100:$120.6000
      • 50:$124.9900
      • 25:$132.2000
      • 1:$137.4900
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von 2N5116-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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