AFT05MS003NT1

AFT05MS003NT1
Mfr. #:
AFT05MS003NT1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AFT05MS003NT1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AFT05MS003NT1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.6 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 30 V
Gewinnen:
20.8 dB
Ausgangsleistung:
3.2 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
SOT-89-3
Verpackung:
Spule
Arbeitsfrequenz:
1.8 MHz to 941 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
1 Channel
Pd - Verlustleistung:
30.5 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 12 V
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Teil # Aliase:
935312585147
Gewichtseinheit:
0.001792 oz
Tags
AFT05MS00, AFT05MS, AFT05, AFT0, AFT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
AFT05MS003NT1 RF MOSFET Transistor
NXP AFT05MS003NT1 RF MOSFET Transistor is designed for handheld two-way radio applications with frequencies ranging from 1.8MHz to 941MHz. The AFT05MS003NT1 transistor has integrated stability enhancements and Electro Static Discharge (ESD) protection. This transistor provides thermal performance with full power across the wideband. The high gain, ruggedness, and wideband performance of this device make it ideal for large-signal and common-source amplifier applications. The AFT05MS003NT1 transistor (T1 = 1000 units) is available with 12mm tape width and 7" reel packed in the SOT-89 package.
Teil # Mfg. Beschreibung Aktie Preis
AFT05MS003NT1
DISTI # AFT05MS003NT1CT-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1080In Stock
  • 500:$2.3547
  • 100:$2.7122
  • 10:$3.2420
  • 1:$3.5800
AFT05MS003NT1
DISTI # AFT05MS003NT1DKR-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1080In Stock
  • 500:$2.3547
  • 100:$2.7122
  • 10:$3.2420
  • 1:$3.5800
AFT05MS003NT1
DISTI # AFT05MS003NT1TR-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 2000:$1.8911
  • 1000:$1.9749
AFT05MS003NT1
DISTI # AFT05MS003NT1
Avnet, Inc.Trans MOSFET N-CH 30V 3-Pin SOT-89 T/R - Tape and Reel (Alt: AFT05MS003NT1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 1000:$1.6900
  • 2000:$1.5900
  • 4000:$1.5900
  • 6000:$1.4900
  • 10000:$1.4900
AFT05MS003NT1
DISTI # AFT05MS003NT1
Avnet, Inc.Trans MOSFET N-CH 30V 3-Pin SOT-89 T/R (Alt: AFT05MS003NT1)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.6900
  • 2000:€1.5900
  • 4000:€1.5900
  • 6000:€1.3900
  • 10000:€1.2900
AFT05MS003NT1
DISTI # AFT05MS003NT1
Avnet, Inc.Trans MOSFET N-CH 30V 3-Pin SOT-89 T/R (Alt: AFT05MS003NT1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 3000:$1.7099
  • 6000:$1.6624
  • 9000:$1.6174
  • 15000:$1.5749
  • 30000:$1.5544
  • 75000:$1.5345
  • 150000:$1.4961
AFT05MS003NT1
DISTI # 31AC6113
Avnet, Inc.Trans MOSFET N-CH 30V 3-Pin SOT-89 T/R - Product that comes on tape, but is not reeled (Alt: 31AC6113)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$3.1600
  • 10:$2.9000
  • 25:$2.6400
  • 50:$2.5100
  • 100:$2.3700
  • 250:$2.1800
  • 500:$1.9800
AFT05MS003NT1
DISTI # 31AC6113
NXP SemiconductorsRF LDMOS, N-CH, 30V, SOT-89,Drain Source Voltage Vds:30V,Continuous Drain Current Id:-,Power Dissipation Pd:30.5W,Operating Frequency Min:1.8MHz,Operating Frequency Max:941MHz,RF Transistor Case:SOT-89,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes100
  • 1:$3.1600
  • 10:$2.9000
  • 25:$2.6400
  • 50:$2.5100
  • 100:$2.3700
  • 250:$2.1800
  • 500:$1.9800
AFT05MS003NT1
DISTI # 841-AFT05MS003NT1
NXP SemiconductorsRF MOSFET Transistors AFT05MS003N/SIL3///REEL 7 Q2 NDP
RoHS: Compliant
13164
  • 1:$3.1600
  • 10:$2.9000
  • 25:$2.6400
  • 100:$2.3700
  • 250:$2.1800
  • 500:$1.9800
  • 1000:$1.7800
  • 2000:$1.7400
AFT05MS003NT1
DISTI # AFT05MS003NT1
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
5170
  • 1:$3.2100
  • 10:$2.9100
  • 25:$2.7100
AFT05MS003NT1
DISTI # 2776248
NXP SemiconductorsTRANSISTOR, RF, 30V, SOT-89-3
RoHS: Compliant
693
  • 1:£2.7400
  • 10:£2.0300
  • 100:£1.8300
  • 250:£1.6800
  • 500:£1.5300
AFT05MS003NT1
DISTI # 2776248
NXP SemiconductorsTRANSISTOR, RF, 30V, SOT-89-3
RoHS: Compliant
650
  • 1:$4.3700
  • 10:$3.9500
  • 100:$3.5300
  • 250:$3.2500
  • 500:$3.0700
  • 1000:$2.9100
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OMO.#: OMO-LTST-S220KFKT-LITE-ON

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Mfr.#: MCP4662-502E/UN

OMO.#: OMO-MCP4662-502E-UN-MICROCHIP-TECHNOLOGY

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Verfügbarkeit
Aktie:
12
Auf Bestellung:
1995
Menge eingeben:
Der aktuelle Preis von AFT05MS003NT1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,30 $
3,30 $
10
3,01 $
30,10 $
100
2,50 $
250,00 $
500
2,12 $
1 060,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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