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FJNS3212RTA

FJNS3212RTA
Mfr. #:
FJNS3212RTA
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJNS3212RTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJNS3212RTA Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
47 kOhms
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
DC-Kollektor/Basisverstärkung hfe Min:
100
Kollektor- Emitterspannung VCEO Max:
40 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Munitionspackung
DC-Stromverstärkung hFE Max:
600
Emitter- Basisspannung VEBO:
5 V
Höhe:
3.7 mm
Länge:
4 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
2.31 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.006286 oz
Tags
FJNS321, FJNS3, FJNS, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
FJNS3212RTA
DISTI # FJNS3212RTA-ND		ON SemiconductorTRANS PREBIAS NPN 300MW TO92S
RoHS: Compliant
Min Qty: 12000
Container: Tape & Box (TB)		Limited Supply - Call
    FJNS3212RTA
    DISTI # 512-FJNS3212RTA    		ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      FJNS3204RBU

      Mfr.#: FJNS3204RBU

      OMO.#: OMO-FJNS3204RBU

      		 Bipolar Transistors - Pre-Biased 50V/100mA/47K 47K
      FJNS3211RTA

      Mfr.#: FJNS3211RTA

      OMO.#: OMO-FJNS3211RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJNS3212RBU

      Mfr.#: FJNS3212RBU

      OMO.#: OMO-FJNS3212RBU

      		 Bipolar Transistors - Pre-Biased NPN/40V/100mA/47K
      FJNS3215RTA

      Mfr.#: FJNS3215RTA

      OMO.#: OMO-FJNS3215RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJNS3203RBU

      Mfr.#: FJNS3203RBU

      OMO.#: OMO-FJNS3203RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJNS3204RBU

      Mfr.#: FJNS3204RBU

      OMO.#: OMO-FJNS3204RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92S
      FJNS3209RBU

      Mfr.#: FJNS3209RBU

      OMO.#: OMO-FJNS3209RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92S
      FJNS3209RTA

      Mfr.#: FJNS3209RTA

      OMO.#: OMO-FJNS3209RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92S
      FJNS3211RBU

      Mfr.#: FJNS3211RBU

      OMO.#: OMO-FJNS3211RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92S
      FJNS3213RBU

      Mfr.#: FJNS3213RBU

      OMO.#: OMO-FJNS3213RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92S
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von FJNS3212RTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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