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FDMS3602S

FDMS3602S
Mfr. #:
FDMS3602S
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 25V Dual N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS3602S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMS3602S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
15 A
Rds On - Drain-Source-Widerstand:
5.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
19 nC, 45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Dual
Handelsname:
Power-Stage PowerTrench
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS3602S
Transistortyp:
2 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
67 S, 132 S
Abfallzeit:
1.8 ns, 3.2 ns
Produktart:
MOSFET
Anstiegszeit:
2 ns, 4.2 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 nS, 31 nS
Typische Einschaltverzögerungszeit:
7.9 nS, 12 nS
Gewichtseinheit:
0.003175 oz
Tags
FDMS3602, FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V
***et Europe
Transistor MOSFET Array Dual N-CH 25V 65A/135A 8-Pin Power 56 T/R
***nell
MOSFET, NN CH, ASYMMETRIC, 25V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
FDMS36xxS Power Stage Dual Asymmetric MOSFETs
ON Semiconductor FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide the highest output current capability among all 5mm x 6mm dual MOSFET solutions on the market. The FDMS36xxS dual asymmetric MOSFETs incorporate a control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET have been designed to provide optimal power efficiency for output currents up to 30A. These ON Semiconductor devices achieve industry-leading sub-2mΩ low side rDS(on) at high performance computing rated breakdown voltages. FDMS36xxS MOSFETs are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMS3602S
DISTI # V36:1790_06338027		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO0
  • 3000000:$1.1840
  • 1500000:$1.1850
  • 300000:$1.2630
  • 30000:$1.3780
  • 3000:$1.3970
FDMS3602S
DISTI # FDMS3602SCT-ND		ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7748In Stock
  • 1000:$1.5141
  • 500:$1.7953
  • 100:$2.1089
  • 10:$2.5740
  • 1:$2.8700
FDMS3602S
DISTI # FDMS3602SDKR-ND		ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7748In Stock
  • 1000:$1.5141
  • 500:$1.7953
  • 100:$2.1089
  • 10:$2.5740
  • 1:$2.8700
FDMS3602S
DISTI # FDMS3602STR-ND		ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$1.3440
  • 3000:$1.3965
FDMS3602S
DISTI # 27107471		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO3000
  • 3000:$1.3970
FDMS3602S
DISTI # FDMS3602S		ON SemiconductorTrans MOSFET N-CH 25V 15A/26A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3602S)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 6000:$1.1900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 3000:$1.2900
FDMS3602S
DISTI # FDMS3602S		ON SemiconductorTrans MOSFET N-CH 25V 15A/26A 8-Pin Power 56 T/R - Bulk (Alt: FDMS3602S)
Min Qty: 226
Container: Bulk		Americas - 0
  • 2260:$1.2900
  • 226:$1.3900
  • 452:$1.3900
  • 678:$1.3900
  • 1130:$1.3900
FDMS3602S
DISTI # FDMS3602S		ON SemiconductorTrans MOSFET N-CH 25V 15A/26A 8-Pin Power 56 T/R (Alt: FDMS3602S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 18000:€1.2900
  • 30000:€1.2900
  • 12000:€1.4900
  • 6000:€1.6900
  • 3000:€2.0900
FDMS3602S
DISTI # FDMS3602S		ON SemiconductorTrans MOSFET N-CH 25V 15A/26A 8-Pin Power 56 T/R (Alt: FDMS3602S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$1.6393
  • 75000:$1.6667
  • 30000:$1.7241
  • 15000:$1.7857
  • 9000:$1.8518
  • 6000:$1.9231
  • 3000:$2.0000
FDMS3602S_P
DISTI # FDMS3602S-P		ON SemiconductorTrans MOSFET N-CH 25V 30A/40A 8-Pin PQFN T/R (Alt: FDMS3602S-P)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDMS3602S
    DISTI # 54T8337    		ON SemiconductorDUAL N CHANNEL MOSFET, 25V, 40A, POWER56, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 30000:$1.2300
    • 18000:$1.2500
    • 12000:$1.3000
    • 6000:$1.4000
    • 3000:$1.5000
    • 1:$1.5700
    FDMS3602S
    DISTI # 512-FDMS3602S    		ON SemiconductorMOSFET 25V Dual N-Channel PowerTrench MOSFET
    RoHS: Compliant    		184
    • 1:$2.6400
    • 10:$2.2500
    • 100:$1.9500
    • 250:$1.8500
    • 500:$1.6600
    • 1000:$1.4000
    • 3000:$1.3300
    • 6000:$1.2800
    FDMS3602SFairchild Semiconductor CorporationPower Field-Effect Transistor, 15A I(D), 25V, 0.0056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		15137
    • 1000:$1.4600
    • 500:$1.5400
    • 100:$1.6000
    • 25:$1.6700
    • 1:$1.8000
    FDMS3602SFairchild Semiconductor Corporation 39
    • 2:$3.0000
    • 8:$2.2500
    • 24:$1.8750
    FDMS3602SFreescale Semiconductor 31
    • 31:$1.5000
    • 9:$2.5000
    • 1:$4.0000
    FDMS3602S
    DISTI # 7599605P    		ON SemiconductorMOSFET DUAL N-CH 25V 15A/26A POWER 56, RL138
    • 25:£0.9400
    Bild Teil # Beschreibung
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    OMO.#: OMO-FMMT624TA

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    OMO.#: OMO-LTC3876IUHF-PBF

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    218-4LPSTF

    Mfr.#: 218-4LPSTF

    OMO.#: OMO-218-4LPSTF

    		 DIP Switches / SIP Switches 4 pos. low profile Btm Seal Tape Off
    218-4LPSTF

    Mfr.#: 218-4LPSTF

    OMO.#: OMO-218-4LPSTF-CTS-ELECTRONIC-COMPONENTS

    		 DIP Switches / SIP Switches 4 pos. low profile Btm Seal Tape Off
    FMMT624TA

    Mfr.#: FMMT624TA

    OMO.#: OMO-FMMT624TA-DIODES

    		 Bipolar Transistors - BJT NPN SuperSOT
    10112634-101LF

    Mfr.#: 10112634-101LF

    OMO.#: OMO-10112634-101LF-AMPHENOL-ICC

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    Verfügbarkeit
    Aktie:
    184
    Auf Bestellung:
    2167
    Menge eingeben:
    Der aktuelle Preis von FDMS3602S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,64 $
    2,64 $
    10
    2,25 $
    22,50 $
    100
    1,95 $
    195,00 $
    250
    1,85 $
    462,50 $
    500
    1,66 $
    830,00 $
    1000
    1,40 $
    1 400,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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