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SIHG33N60EF-GE3

SIHG33N60EF-GE3
Mfr. #:
SIHG33N60EF-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG33N60EF-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHG33N60EF-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHG33N60, SIHG33, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-CH 650V 33A, EF Series Power MOSFET with Fast Body Diode in TO-247AC
***Components
N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin TO-27AC T/R
***ment14 APAC
MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3
***i-Key
MOSFET N-CH 600V 33A TO-247AC
***
N-CH 600V T0-247AC
***et
N-CHANNEL 600V
***nell
MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; MSL:-
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Teil # Mfg. Beschreibung Aktie Preis
SIHG33N60EF-GE3
DISTI # SIHG33N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		246In Stock
  • 100:$5.4945
  • 10:$6.6830
  • 1:$7.4300
SIHG33N60EF-GE3
DISTI # SIHG33N60EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-27AC T/R - Bulk (Alt: SIHG33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Bulk		Americas - 0
  • 500:$3.8900
  • 1000:$3.7900
  • 2000:$3.5900
  • 3000:$3.4900
  • 5000:$3.3900
SIHG33N60EF-GE3
DISTI # 31Y6761		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AC-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
  • 1:$6.7500
  • 10:$6.0800
  • 25:$5.5400
  • 50:$5.2700
  • 100:$5.0000
  • 250:$4.6000
SIHG33N60EF-GE3
DISTI # 78-SIHG33N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		362
  • 1:$6.7500
  • 10:$6.0800
  • 25:$5.5400
  • 100:$5.0000
  • 250:$4.6000
SIHG33N60EF-GE3
DISTI # 9034484P		Vishay IntertechnologiesMOSFET 600V 33A W/FAST DIODE TO-247AC, TU289
  • 10:£4.4000
  • 50:£4.0100
  • 100:£3.6200
  • 200:£3.5500
SIHG33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3-VISHAY

    		 MOSFET N-CH 600V 33A TO247AC
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3-VISHAY

    		 MOSFET N-CH 650V 31.6A TO-247AC
    SIHG33N60E-G3

    Mfr.#: SIHG33N60E-G3

    OMO.#: OMO-SIHG33N60E-G3-1190

    		 Neu und Original
    SIHG33N60E-GE3,G33N60E,

    Mfr.#: SIHG33N60E-GE3,G33N60E,

    OMO.#: OMO-SIHG33N60E-GE3-G33N60E--1190

    		 Neu und Original
    SIHG33N60E-GE3,SIHG33N60

    Mfr.#: SIHG33N60E-GE3,SIHG33N60

    OMO.#: OMO-SIHG33N60E-GE3-SIHG33N60-1190

    		 Neu und Original
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3-VISHAY

    		 Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von SIHG33N60EF-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,08 $
    5,08 $
    10
    4,83 $
    48,31 $
    100
    4,58 $
    457,65 $
    500
    4,32 $
    2 161,15 $
    1000
    4,07 $
    4 068,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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