IPB80N03S4L-03

IPB80N03S4L-03
Mfr. #:
IPB80N03S4L-03
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB80N03S4L-03 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB80N03S4L-03 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
140 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
136 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS-T2
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
62 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPB80N03S4L03ATMA1 IPB8N3S4L3XT SP000274982
Gewichtseinheit:
0.139332 oz
Tags
IPB80N03S4L-0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB80N03S4L03ATMA1
DISTI # V72:2272_06384649
Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
850
  • 500:$0.8349
  • 250:$0.8491
  • 100:$0.9434
  • 25:$1.1967
  • 10:$1.2095
  • 1:$1.5683
IPB80N03S4L03ATMA1
DISTI # V36:1790_06384649
Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.5136
  • 500000:$0.5140
  • 100000:$0.5681
  • 10000:$0.6757
  • 1000:$0.6944
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
669In Stock
  • 500:$0.9060
  • 100:$1.0967
  • 10:$1.4070
  • 1:$1.5700
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
669In Stock
  • 500:$0.9060
  • 100:$1.0967
  • 10:$1.4070
  • 1:$1.5700
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.5926
  • 5000:$0.6157
  • 2000:$0.6481
  • 1000:$0.6944
IPB80N03S4L03ATMA1
DISTI # 33642556
Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
5000
  • 1000:$0.7098
IPB80N03S4L03ATMA1
DISTI # 32404270
Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
850
  • 12:$1.5683
IPB80N03S4L-03
DISTI # IPB80N03S4L-03
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: IPB80N03S4L-03)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 50000:$0.5335
  • 25000:$0.5404
  • 10000:$0.5474
  • 5000:$0.5546
  • 3000:$0.5696
  • 2000:$0.5854
  • 1000:$0.6021
IPB80N03S4L-03
DISTI # IPB80N03S4L03
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N03S4L03)
RoHS: Not Compliant
Min Qty: 962
Container: Bulk
Americas - 0
  • 9620:$0.5589
  • 4810:$0.5689
  • 2886:$0.5889
  • 1924:$0.6109
  • 962:$0.6339
IPB80N03S4L-03
DISTI # IPB80N03S4L-03
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N03S4L-03)
RoHS: Not Compliant
Min Qty: 642
Container: Bulk
Americas - 0
  • 6420:$0.5589
  • 3210:$0.5689
  • 1926:$0.5889
  • 1284:$0.6109
  • 642:$0.6339
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB80N03S4L03ATMA1)
RoHS: Compliant
Min Qty: 642
Container: Bulk
Americas - 0
  • 6420:$0.4949
  • 3210:$0.5039
  • 1926:$0.5219
  • 1284:$0.5409
  • 642:$0.5609
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L-03ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB80N03S4L-03ATMA1)
RoHS: Compliant
Min Qty: 658
Container: Bulk
Americas - 0
  • 6580:$0.4819
  • 3290:$0.4909
  • 1974:$0.5079
  • 1316:$0.5269
  • 658:$0.5469
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L03ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.5599
  • 6000:$0.5699
  • 4000:$0.5899
  • 2000:$0.6119
  • 1000:$0.6349
IPB80N03S4L03ATMA1
DISTI # SP000274982
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000274982)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€0.5589
  • 6000:€0.5969
  • 4000:€0.6559
  • 2000:€0.7339
  • 1000:€0.9409
IPB80N03S4L03ATMA1
DISTI # 49AC0285
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes935
  • 500:$0.8460
  • 250:$0.9020
  • 100:$0.9570
  • 50:$1.0500
  • 25:$1.1500
  • 10:$1.2400
  • 1:$1.4500
IPB80N03S4L-03
DISTI # 726-IPB80N03S4L-03
Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant
322
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9480
  • 500:$0.8380
  • 1000:$0.6620
  • 2000:$0.5870
  • 10000:$0.5650
IPB80N03S4L03ATMA1
DISTI # 726-IPB80N03S4L03ATM
Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant
925
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9480
  • 500:$0.8380
  • 1000:$0.6620
  • 2000:$0.5870
  • 10000:$0.5650
IPB80N03S4L-03Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
1000
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
IPB80N03S4L-03ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
8000
  • 1000:$0.5000
  • 500:$0.5300
  • 100:$0.5500
  • 25:$0.5700
  • 1:$0.6200
IPB80N03S4L03Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
2000
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
IPB80N03S4L03ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
2749
  • 1000:$0.5100
  • 500:$0.5400
  • 100:$0.5600
  • 25:$0.5900
  • 1:$0.6300
IPB80N03S4L03ATMA1
DISTI # 8922191P
Infineon Technologies AGMOSFET N-CHANNEL 30V 80A OPTIMOS TO263, RL640
  • 2000:£0.5690
  • 500:£0.6570
  • 200:£0.7440
IPB80N03S4L03ATMA1
DISTI # 2839453
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263
RoHS: Compliant
935
  • 5000:$0.8770
  • 1000:$0.9290
  • 500:$0.9740
  • 250:$1.1300
  • 100:$1.3400
  • 25:$1.6400
  • 5:$1.8900
IPB80N03S4L03ATMA1
DISTI # 2839453
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263900
  • 500:£0.6460
  • 250:£0.6880
  • 100:£0.7300
  • 10:£0.9970
  • 1:£1.2600
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Verfügbarkeit
Aktie:
302
Auf Bestellung:
2285
Menge eingeben:
Der aktuelle Preis von IPB80N03S4L-03 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,44 $
1,44 $
10
1,23 $
12,30 $
100
0,95 $
94,80 $
500
0,84 $
419,00 $
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