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TN0110N3-G-P002

TN0110N3-G-P002
Mfr. #:
TN0110N3-G-P002
Hersteller:
Microchip Technology
Beschreibung:
MOSFET N-CH Enhancmnt Mode MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TN0110N3-G-P002 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
TN0110N3-G-P002 Mehr Informationen TN0110N3-G-P002 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
350 mA
Rds On - Drain-Source-Widerstand:
4.5 Ohms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
5.33 mm
Länge:
5.21 mm
Produkt:
MOSFET Kleinsignal
Transistortyp:
1 N-Channel
Breite:
4.19 mm
Marke:
Mikrochip-Technologie
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
6 ns
Typische Einschaltverzögerungszeit:
2 ns
Gewichtseinheit:
0.016000 oz
Tags
TN0110N3-G, TN0110N3, TN0110N, TN011, TN01, TN0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
***rochip
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 3.0 Ohm
***ark
Mosfet, N-Channel Enhancement-Mode, 100V, 3.0 Ohm 3 To-92 Rvt/R Rohs Compliant: Yes |Microchip TN0110N3-G-P002
***rochip SCT
Enhancement-Mode N-Channel, 3Ω, 2V, TO-92-3, RoHS
*** Electronic Components
MOSFET N-CH Enhancmnt Mode MOSFET
***ure Electronics
N-Channel 100 V 4.5 Ohm 700 mW Enhancement Mode Vertical DMOS FET - TO-92
***ical
Trans MOSFET N-CH 100V 0.32A Automotive 3-Pin E-Line
***(Formerly Allied Electronics)
MOSFET N-Channel 100V 0.32A E-Line | Diodes Inc ZVNL110A
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ronik
N-CH-FET 0,32A 100V TO92E-LINE
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:320Ma; On Resistance Rds(On):3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Product Range:- Rohs Compliant: No
***ark
Mosfet, N-Ch, 100V, 0.32A, To-92 Rohs Compliant: Yes |Diodes Inc. ZVNL110ASTZ
***ure Electronics
N-Channel 100 V 3 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ical
Trans MOSFET N-CH 100V 0.32A Automotive 3-Pin E-Line T/R
***ure Electronics
N-Channel 100 V 4 Ohm Enhancement Mode Vertical DMOS FET- TO-92
***ical
Flamar Control Cable WSOR Jacket Unshielded 3 Circuits 21 AWG with Green/Yellow Ground 5.60mm Diameter 300.0m Length Gray
***ark
N CH DMOS FET, 100V, 320mA, TO-92; Transistor Polarity:N Channel; Continuous Drain Current, Id:320mA; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:320mA; Current Temperature:25°C; Device Marking:ZVN2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:6A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
TN0110N3-G-P002
DISTI # V72:2272_06515669		Microchip Technology IncTrans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 75000:$0.5875
  • 30000:$0.5939
  • 15000:$0.6004
  • 6000:$0.6069
  • 3000:$0.6121
  • 1000:$0.6188
  • 500:$0.6254
  • 250:$0.6323
  • 100:$0.6391
  • 50:$0.6949
  • 25:$0.7026
  • 10:$0.8098
  • 1:$0.8291
TN0110N3-G-P002
DISTI # TN0110N3-G-P002-ND		Microchip Technology IncMOSFET N-CH 100V 350MA TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.7416
TN0110N3-G-P002
DISTI # 25749249		Microchip Technology IncTrans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 1000:$0.6188
  • 500:$0.6254
  • 250:$0.6323
  • 100:$0.6391
  • 50:$0.6949
  • 25:$0.7026
  • 14:$0.8098
TN0110N3-G-P002
DISTI # TN0110N3-G-P002		Microchip Technology IncTrans MOSFET N-CH 100V 0.35A 3-Pin TO-92 T/R - Tape and Reel (Alt: TN0110N3-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.5109
  • 4000:$0.4939
  • 8000:$0.4779
  • 12000:$0.4629
  • 20000:$0.4559
TN0110N3-G-P002
DISTI # 70483877		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,100V,3.0 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$0.6800
TN0110N3-G-P002
DISTI # 689-TN0110N3-G-P002		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		3967
  • 1:$0.9800
  • 10:$0.9650
  • 25:$0.8140
  • 100:$0.7420
TN0110N3-G-P002
DISTI # C1S505201327069		Microchip Technology IncTrans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 100:$0.6391
  • 50:$0.6949
  • 25:$0.7026
  • 10:$0.8098
Bild Teil # Beschreibung
P0130AA 1EA3

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 SCRs THYRISTOR
1658622-8

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OMO.#: OMO-1658622-8

 Headers & Wire Housings .1CL IDC REC 2X17P C&M 30AU
CMF6010K000FKEB

Mfr.#: CMF6010K000FKEB

OMO.#: OMO-CMF6010K000FKEB

 Metal Film Resistors - Through Hole 1W 10Kohms 1%
YR1B210KCC

Mfr.#: YR1B210KCC

OMO.#: OMO-YR1B210KCC

 Metal Film Resistors - Through Hole 210 KOhm 1/4W 15PPM
G0034K000FB1280

Mfr.#: G0034K000FB1280

OMO.#: OMO-G0034K000FB1280-1098

 Wirewound Resistors - Through Hole 4Kohms 1% 2watts
PR02000201009JR500

Mfr.#: PR02000201009JR500

OMO.#: OMO-PR02000201009JR500-VISHAY

 Metal Film Resistors - Through Hole 2watts 10ohms 5%
PR02000201009JA100

Mfr.#: PR02000201009JA100

OMO.#: OMO-PR02000201009JA100-VISHAY

 Metal Film Resistors - Through Hole 2watt 10ohms 5%
86130163130345E1LF

Mfr.#: 86130163130345E1LF

OMO.#: OMO-86130163130345E1LF-AMPHENOL-ICC

 Headers & Wire Housings FEM CONN FLAT CABLE
MF1/4LCT52R301G

Mfr.#: MF1/4LCT52R301G

OMO.#: OMO-MF1-4LCT52R301G-1088

 Metal Film Resistors - Through Hole 1/4 WATT 300 OHM 2%
H4P3K0FZA

Mfr.#: H4P3K0FZA

OMO.#: OMO-H4P3K0FZA-TE-CONNECTIVITY-AMP

 Metal Film Resistors - Through Hole H4P 3K0 1% 100PPM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von TN0110N3-G-P002 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,97 $
0,97 $
10
0,96 $
9,64 $
25
0,81 $
20,33 $
100
0,74 $
74,10 $
250
0,65 $
163,00 $
500
0,56 $
278,00 $
1000
0,51 $
506,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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