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BSC070N10NS3GATMA1

BSC070N10NS3GATMA1
Mfr. #:
BSC070N10NS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC070N10NS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
114 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
36 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
29 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
BSC070N10NS3 BSC7N1NS3GXT G SP000778082
Gewichtseinheit:
0.010582 oz
Tags
BSC070N10NS3, BSC070N10N, BSC070N, BSC070, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 7 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
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***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
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***nell
MOSFET, N-CH, 100V, 13A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
BSC070N10NS3GATMA1
DISTI # V72:2272_06383503		Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		4188
  • 3000:$0.6068
  • 1000:$0.6130
  • 500:$0.7507
  • 250:$0.8361
  • 100:$0.8454
  • 25:$1.0488
  • 10:$1.0616
  • 1:$1.2038
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.7037
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8175
  • 500:$1.0354
  • 100:$1.3352
  • 10:$1.6890
  • 1:$1.9100
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8175
  • 500:$1.0354
  • 100:$1.3352
  • 10:$1.6890
  • 1:$1.9100
BSC070N10NS3GATMA1
DISTI # 31308611		Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		4188
  • 12:$1.2038
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC070N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5539
  • 10000:$0.5339
  • 20000:$0.5149
  • 30000:$0.4969
  • 50000:$0.4879
BSC070N10NS3GATMA1
DISTI # 47Y7995		Infineon Technologies AGMOSFET Transistor, N Channel, 90 A, 100 V, 0.0063 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
  • 1:$1.5800
  • 10:$1.3500
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 250:$0.9770
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1.
DISTI # 27AC1074		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:114W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.5540
  • 10000:$0.5340
  • 20000:$0.5150
  • 30000:$0.4970
  • 50000:$0.4880
BSC070N10NS3 G
DISTI # 726-BSC070N10NS3G		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
RoHS: Compliant		208
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1
DISTI # 726-BSC070N10NS3GATM		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
RoHS: Compliant		197
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1
DISTI # 9064359P		Infineon Technologies AGMOSFET N-CHANNEL 100V 90A OPTIMOS TDSON, RL4750
  • 50:£0.8650
  • 250:£0.7530
  • 500:£0.6610
  • 1250:£0.5220
BSC070N10NS3GATMA1
DISTI # 2443421		Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
RoHS: Compliant		7454
  • 5:£0.9400
  • 25:£0.8490
  • 100:£0.6620
  • 250:£0.6050
  • 500:£0.5470
BSC070N10NS3GATMA1
DISTI # C1S322000595923		Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		4688
  • 10:$1.0693
BSC070N10NS3GATMA1
DISTI # 2443421		Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
RoHS: Compliant		7172
  • 1:$2.5000
  • 10:$2.1400
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.1500
  • 5000:$1.1400
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Verfügbarkeit
Aktie:
17
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von BSC070N10NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,57 $
1,57 $
10
1,34 $
13,40 $
100
1,03 $
103,00 $
500
0,91 $
457,00 $
1000
0,72 $
722,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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