CGH40120F

CGH40120F
Mfr. #:
CGH40120F
Hersteller:
N/A
Beschreibung:
RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGH40120F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGH40120F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Cree
Produktkategorie
IC-Chips
Verpackung
Rohr
Montageart
Schraube
Betriebstemperaturbereich
-
Paket-Koffer
440193
Technologie
GaN SiC
Aufbau
Single
Transistor-Typ
HEMT
Gewinnen
19 dB
Klasse
-
Ausgangsleistung
120 W
Pd-Verlustleistung
-
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Anwendung
-
Arbeitsfrequenz
1 GHz to 2.5 GHz
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Widerstand
-
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
-
Entwicklungs-Kit
CGH40120F-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Gate-Source-Cutoff-Spannung
-
Maximum-Drain-Gate-Spannung
-
NF-Geräusch-Abbildung
-
P1dB-Kompressionspunkt
-
Tags
CGH4012, CGH401, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440193
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Teil # Mfg. Beschreibung Aktie Preis
CGH40120F
DISTI # CGH40120F-ND
WolfspeedRF MOSFET HEMT 28V 440193
RoHS: Compliant
Min Qty: 1
Container: Tray
629In Stock
  • 1:$302.8500
CGH40120F-TB
DISTI # CGH40120F-TB-ND
WolfspeedBOARD DEMO AMP CIRCUIT CGH40120
RoHS: Not compliant
Min Qty: 1
Container: Bulk
Temporarily Out of Stock
  • 1:$550.0000
CGH40120F
DISTI # 941-CGH40120F
Cree, Inc.RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
RoHS: Compliant
167
  • 1:$302.8500
CGH40120F-TB
DISTI # 941-CGH40120F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
CGH40120F
DISTI # CGH40120F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
100
  • 1:$302.8500
CGH40120F-TB
DISTI # CGH40120F-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
0
  • 2:$550.0000
Bild Teil # Beschreibung
CGH40035F

Mfr.#: CGH40035F

OMO.#: OMO-CGH40035F

RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
CGH40006P

Mfr.#: CGH40006P

OMO.#: OMO-CGH40006P

RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
CGH40090PP-TB

Mfr.#: CGH40090PP-TB

OMO.#: OMO-CGH40090PP-TB

RF Development Tools Test Board without GaN HEMT
CGH492T350W5L

Mfr.#: CGH492T350W5L

OMO.#: OMO-CGH492T350W5L

Aluminum Electrolytic Capacitors - Screw Terminal 4900uF 350V-10+50%
CGH40010F-TB

Mfr.#: CGH40010F-TB

OMO.#: OMO-CGH40010F-TB

RF Development Tools Test Board without GaN HEMT
CGH40006P-TB

Mfr.#: CGH40006P-TB

OMO.#: OMO-CGH40006P-TB-WOLFSPEED

BOARD DEMO AMP CIRCUIT CGH40006P
CGH40045

Mfr.#: CGH40045

OMO.#: OMO-CGH40045-1190

Neu und Original
CGH40025F

Mfr.#: CGH40025F

OMO.#: OMO-CGH40025F-WOLFSPEED

RF JFET Transistors DC-6GHz 28V 25W Gain 13dB GaN HEMT
CGH40045F

Mfr.#: CGH40045F

OMO.#: OMO-CGH40045F-WOLFSPEED

RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
CGH482T450X5L

Mfr.#: CGH482T450X5L

OMO.#: OMO-CGH482T450X5L-CORNELL-DUBILIER-ELECTRONICS

Aluminum Electrolytic Capacitors - Screw Terminal 4800uF 450V-10+50%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von CGH40120F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
454,28 $
454,28 $
10
431,56 $
4 315,61 $
100
408,85 $
40 884,75 $
500
386,13 $
193 066,90 $
1000
363,42 $
363 420,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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