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IPB65R110CFDAATMA1

IPB65R110CFDAATMA1
Mfr. #:
IPB65R110CFDAATMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB65R110CFDAATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB65R110CFDAATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IPB65R110
Verpackung
Spule
Teil-Aliasnamen
IPB65R110CFDA IPB65R110CFDAXT SP000896402
Gewichtseinheit
0.068654 oz
Handelsname
CoolMOS
Paket-Koffer
TO-263-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
ID-Dauer-Drain-Strom
99.6 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Rds-On-Drain-Source-Widerstand
110 mOhms
Transistor-Polarität
N-Kanal
Tags
IPB65R110CFDA, IPB65R11, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Japan
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R
***ronik
N-CH 650V 31,2A 110mOhm TO263-3
***i-Key
MOSFET N-CH TO263-3
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.099Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8mW; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8mW; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$3.8767
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1000In Stock
  • 500:$4.5846
  • 100:$5.4720
  • 10:$6.6550
  • 1:$7.3900
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1000In Stock
  • 500:$4.5846
  • 100:$5.4720
  • 10:$6.6550
  • 1:$7.3900
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R110CFDAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.3900
  • 2000:$3.3900
  • 4000:$3.3900
  • 6000:$3.3900
  • 10000:$3.3900
IPB65R110CFDAATMA1
DISTI # SP000896402		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: SP000896402)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€3.5900
  • 2000:€3.3900
  • 4000:€3.2900
  • 6000:€3.0900
  • 10000:€2.7900
IPB65R110CFDAATMA1
DISTI # 13AC9032		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes40
  • 500:$4.0500
  • 250:$4.4400
  • 100:$4.6500
  • 50:$5.0100
  • 25:$5.3600
  • 10:$5.6200
  • 1:$6.2100
IPB65R110CFDA
DISTI # 726-IPB65R110CFDA		Infineon Technologies AGMOSFET N-Ch 650V 99.6A D2PAK-2
RoHS: Compliant		725
  • 1:$6.2100
  • 10:$5.6100
  • 25:$5.3500
  • 100:$4.6400
  • 250:$4.4300
  • 500:$4.0400
  • 1000:$3.5200
  • 2000:$3.3900
IPB65R110CFDAATMA1
DISTI # 726-IPB65R110CFDAATM		Infineon Technologies AGMOSFET N-Ch 650V 99.6A D2PAK-2
RoHS: Compliant		995
  • 1:$6.2100
  • 10:$5.6100
  • 25:$5.3500
  • 100:$4.6400
  • 250:$4.4300
  • 500:$4.0400
  • 1000:$3.5200
  • 2000:$3.3900
IPB65R110CFDAATMA1
DISTI # 2726046		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-263-3
RoHS: Compliant		130
  • 100:£4.2600
  • 10:£4.9100
  • 1:£6.2800
IPB65R110CFDAATMA1
DISTI # 2726046		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-263-3
RoHS: Compliant		40
  • 500:$7.3100
  • 100:$8.7300
  • 10:$10.6100
  • 1:$11.7900
Bild Teil # Beschreibung
IPB65R110CFDA

Mfr.#: IPB65R110CFDA

OMO.#: OMO-IPB65R110CFDA

 MOSFET N-Ch 650V 99.6A D2PAK-2
IPB65R110CFDAATMA1

Mfr.#: IPB65R110CFDAATMA1

OMO.#: OMO-IPB65R110CFDAATMA1

 MOSFET N-Ch 650V 99.6A D2PAK-2
IPB65R110CFDATMA1

Mfr.#: IPB65R110CFDATMA1

OMO.#: OMO-IPB65R110CFDATMA1

 MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
IPB65R110CFDATMA2

Mfr.#: IPB65R110CFDATMA2

OMO.#: OMO-IPB65R110CFDATMA2-INFINEON-TECHNOLOGIES

 HIGH POWER_LEGACY
IPB65R110CFD

Mfr.#: IPB65R110CFD

OMO.#: OMO-IPB65R110CFD-1190

 MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
IPB65R110CFD 65F6110

Mfr.#: IPB65R110CFD 65F6110

OMO.#: OMO-IPB65R110CFD-65F6110-1190

 Neu und Original
IPB65R110CFDA

Mfr.#: IPB65R110CFDA

OMO.#: OMO-IPB65R110CFDA-1190

 Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: IPB65R110CFDA)
IPB65R110CFDA 65F6110A

Mfr.#: IPB65R110CFDA 65F6110A

OMO.#: OMO-IPB65R110CFDA-65F6110A-1190

 Neu und Original
IPB65R110CFDATMA1

Mfr.#: IPB65R110CFDATMA1

OMO.#: OMO-IPB65R110CFDATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 31.2A TO263
IPB65R110CFDAATMA1

Mfr.#: IPB65R110CFDAATMA1

OMO.#: OMO-IPB65R110CFDAATMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPB65R110CFDAATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,56 $
4,56 $
10
4,33 $
43,33 $
100
4,11 $
410,54 $
500
3,88 $
1 938,65 $
1000
3,65 $
3 649,20 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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