We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| GT50JR21(STA1,E,S) DISTI # C1S751201056609 | Toshiba America Electronic Components | IGBT Chip | 40 |
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| GT50JR21STA1 | Toshiba America Electronic Components | RoHS: Compliant | Europe - 100 | |
| GT50JR21STA1ES | Toshiba America Electronic Components | RoHS: Compliant | Europe - 150 | |
| GT50JR21(STA1ES) | Toshiba America Electronic Components | IGBT Transistors LOW SATURATION/FAST SWITCHING RoHS: Compliant | Americas - | |
| GT50JR21(STA1,E,S) | Toshiba America Electronic Components | LOW SATURATION/FAST SWITCHING RoHS: Compliant | Americas - |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: GT50JR21 OMO.#: OMO-GT50JR21-1190 |
IGBT N-CH 600V 50A ENHANCEMENT TO3PN, TU |
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Mfr.#: GT50JR21(STA1ES) OMO.#: OMO-GT50JR21-STA1ES--1190 |
IGBTs (Alt: GT50JR21(STA1,E,S)) |
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Mfr.#: GT50JR21STA1 OMO.#: OMO-GT50JR21STA1-1190 |
IGBT Transistors LOW SATURATION/FAST SWITCHING |
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Mfr.#: GT50JR22 OMO.#: OMO-GT50JR22-1190 |
IGBT N-CH 600V 50A ENHANCEMENT TO3PN, EA |
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Mfr.#: GT50JR22(S1WD E S OMO.#: OMO-GT50JR22-S1WD-E-S-1190 |
Neu und Original |
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Mfr.#: GT50JR22(S1WLD,E,STOSHIB |
Neu und Original |
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Mfr.#: GT50JR22(S1WLDES OMO.#: OMO-GT50JR22-S1WLDES-1190 |
Neu und Original |
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Mfr.#: GT50JR22(STA1,E,S) OMO.#: OMO-GT50JR22-STA1-E-S--1190 |
Neu und Original |
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Mfr.#: GT50JR22(STA1ES) OMO.#: OMO-GT50JR22-STA1ES--1190 |
Neu und Original |
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Mfr.#: GT50JR22,50JR22 OMO.#: OMO-GT50JR22-50JR22-1190 |
Neu und Original |