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PD57018-E

PD57018-E
Mfr. #:
PD57018-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors POWER RF Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD57018-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PD57018-E Mehr Informationen PD57018-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.5 A
Vds - Drain-Source-Durchbruchspannung:
65 V
Rds On - Drain-Source-Widerstand:
760 mOhms
Gewinnen:
16.5 dB
Ausgangsleistung:
18 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Formed-4
Verpackung:
Rohr
Aufbau:
Single
Höhe:
3.5 mm
Länge:
7.5 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD57018-E
Typ:
HF-Leistungs-MOSFET
Breite:
9.4 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
1 S
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
31.7 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Gewichtseinheit:
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Teil # Mfg. Beschreibung Aktie Preis
PD57018-E
DISTI # V36:1790_06556195		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		5
  • 100:$23.6900
  • 10:$27.2500
  • 1:$29.4000
PD57018-E
DISTI # 497-5305-5-ND		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
RoHS: Compliant
Min Qty: 1
Container: Tube		555In Stock
  • 100:$25.5208
  • 50:$28.5430
  • 1:$32.4000
PD57018-E
DISTI # 16486842		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		2490
  • 3:$31.7500
PD57018-E
DISTI # 24188752		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		22
  • 100:$24.5000
  • 10:$28.6906
  • 1:$31.1040
PD57018-E
DISTI # 26164719		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		5
  • 1:$29.4000
PD57018-E
DISTI # PD57018-E		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube (Alt: PD57018-E)
RoHS: Compliant
Min Qty: 400
Container: Tube		Asia - 0
  • 400:$23.4876
  • 800:$22.3691
  • 1200:$21.3524
  • 2000:$20.4240
  • 4000:$19.5730
  • 10000:$19.0440
  • 20000:$18.5428
PD57018-E
DISTI # PD57018-E		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD57018-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$25.0900
  • 800:$23.8900
  • 1600:$22.8900
  • 2400:$21.7900
  • 4000:$21.3900
PD57018-E
DISTI # 45AC7468		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF,Drain Source Voltage Vds:65V,Continuous Drain Current Id:2.5A,Power Dissipation Pd:31.7W,Operating Frequency Min:-,Operating Frequency Max:945MHz,RF Transistor Case:PowerSO-10RF,No. of RoHS Compliant: Yes306
  • 1:$35.2200
  • 5:$34.8900
  • 10:$32.7400
  • 25:$31.4200
  • 50:$29.9300
  • 100:$28.4400
  • 250:$27.2800
PD57018-E
DISTI # 511-PD57018-E		STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant		92
  • 1:$32.4100
  • 5:$32.0700
  • 10:$29.8900
  • 25:$28.5500
  • 100:$25.5300
  • 250:$24.3500
PD57018TR-E
DISTI # 511-PD57018TR-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
  • 1:$32.4100
  • 5:$32.0700
  • 10:$29.8900
  • 25:$28.5500
  • 100:$25.5300
  • 250:$24.3500
  • 600:$23.1800
PD57018-E
DISTI # PD57018-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		2490
  • 400:$24.3600
  • 500:$23.0600
  • 1000:$21.9000
PD57018-E
DISTI # C1S730200502153		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		22
  • 10:$30.3000
  • 5:$33.0000
  • 1:$40.1000
PD57018-E
DISTI # 2807339		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
RoHS: Compliant		276
  • 1:£24.3300
  • 5:£23.2300
  • 10:£22.1200
  • 50:£20.5000
  • 100:£18.8700
PD57018-E
DISTI # 2807339		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
RoHS: Compliant		276
  • 1:$51.6400
  • 50:$45.5000
  • 100:$40.6800
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OMO.#: OMO-LM358ADR

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OMO.#: OMO-INA168NA-3K

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Mfr.#: 2499-003-X7W0-103ZLF

OMO.#: OMO-2499-003-X7W0-103ZLF

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INA168NA/3K

Mfr.#: INA168NA/3K

OMO.#: OMO-INA168NA-3K-TEXAS-INSTRUMENTS

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VLS6045EX-151M

Mfr.#: VLS6045EX-151M

OMO.#: OMO-VLS6045EX-151M-TDK

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LM358ADR

Mfr.#: LM358ADR

OMO.#: OMO-LM358ADR-TEXAS-INSTRUMENTS

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Mfr.#: 0402ZD105KAT2A

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Verfügbarkeit
Aktie:
201
Auf Bestellung:
2184
Menge eingeben:
Der aktuelle Preis von PD57018-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
32,41 $
32,41 $
5
32,07 $
160,35 $
10
29,89 $
298,90 $
25
28,55 $
713,75 $
100
25,53 $
2 553,00 $
250
24,35 $
6 087,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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