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MRF8S18120HSR3

MRF8S18120HSR3
Mfr. #:
MRF8S18120HSR3
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF8S18120HSR3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF8S18120HSR3 DatasheetMRF8S18120HSR3 Datasheet (P4-P6)MRF8S18120HSR3 Datasheet (P7-P9)MRF8S18120HSR3 Datasheet (P10-P12)MRF8S18120HSR3 Datasheet (P13-P14)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
800 mA
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 65 V
Gewinnen:
18.2 dB
Ausgangsleistung:
72 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-780
Verpackung:
Spule
Aufbau:
Single
Arbeitsfrequenz:
1.805 GHz to 1.88 GHz
Serie:
MRF8S18120H
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
1 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
10 V
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Teil # Aliase:
935310108128
Gewichtseinheit:
0.168010 oz
Tags
MRF8S18120HSR, MRF8S18120HS, MRF8S181, MRF8S18, MRF8S1, MRF8S, MRF8, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 120 W, Typ Gain in dB is 18.2 @ 1805 MHz, 28 V, LDMOS, SOT1793
***et
Transistor RF FET N-CH 65V 1805MHz to 1880MHz 3-Pin NI-780S T/R
***ical
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
***i-Key Marketplace
RF L BAND, N-CHANNEL POWER MOSFE
Teil # Mfg. Beschreibung Aktie Preis
MRF8S18120HSR3
DISTI # MRF8S18120HSR3TR-ND		NXP SemiconductorsFET RF 65V 1.81GHZ NI-780S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF8S18120HSR3
    DISTI # MRF8S18120HSR3CT-ND    		NXP SemiconductorsFET RF 65V 1.81GHZ NI-780S
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      MRF8S18120HSR3
      DISTI # MRF8S18120HSR3DKR-ND      		NXP SemiconductorsFET RF 65V 1.81GHZ NI-780S
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        MRF8S18120HSR3Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
        RoHS: Compliant        		675
        • 1000:$89.0000
        • 500:$93.6800
        • 100:$97.5300
        • 25:$101.7100
        • 1:$109.5400
        MRF8S18120HSR3
        DISTI # 841-MRF8S18120HSR3        		NXP SemiconductorsRF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
        RoHS: Compliant        		196
        • 1:$108.0100
        • 5:$105.9100
        • 10:$102.4200
        • 25:$98.0800
        • 50:$96.7400
        • 100:$89.9700
        • 250:$87.9500
        Bild Teil # Beschreibung
        MRF8S18120HSR3

        Mfr.#: MRF8S18120HSR3

        OMO.#: OMO-MRF8S18120HSR3

        		 RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
        MRF8S18260HR5

        Mfr.#: MRF8S18260HR5

        OMO.#: OMO-MRF8S18260HR5

        		 RF MOSFET Transistors HV8 1.8GHZ 260W NI1230-8
        MRF8S18210WGHSR5

        Mfr.#: MRF8S18210WGHSR5

        OMO.#: OMO-MRF8S18210WGHSR5

        		 RF MOSFET Transistors HV8 1.8GHZ 210W
        MRF8S18210WHSR5

        Mfr.#: MRF8S18210WHSR5

        OMO.#: OMO-MRF8S18210WHSR5

        		 RF MOSFET Transistors HV8 1.8GHZ 55W
        MRF8S18120HSR5

        Mfr.#: MRF8S18120HSR5

        OMO.#: OMO-MRF8S18120HSR5

        		 RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
        MRF8S18260HR5

        Mfr.#: MRF8S18260HR5

        OMO.#: OMO-MRF8S18260HR5-NXP-SEMICONDUCTORS

        		 FET RF 2CH 65V 1.81GHZ NI1230-8
        MRF8S18120HSR5

        Mfr.#: MRF8S18120HSR5

        OMO.#: OMO-MRF8S18120HSR5-NXP-SEMICONDUCTORS

        		 FET RF 65V 1.81GHZ NI-780S
        MRF8S18210WGHSR3

        Mfr.#: MRF8S18210WGHSR3

        OMO.#: OMO-MRF8S18210WGHSR3-NXP-SEMICONDUCTORS

        		 FET RF 65V 1.93GHZ NI880XGS
        MRF8S18260HR6

        Mfr.#: MRF8S18260HR6

        OMO.#: OMO-MRF8S18260HR6-NXP-SEMICONDUCTORS

        		 FET RF 2CH 65V 1.81GHZ NI1230-8
        MRF8S18120HR3

        Mfr.#: MRF8S18120HR3

        OMO.#: OMO-MRF8S18120HR3-NXP-SEMICONDUCTORS

        		 FET RF 65V 1.81GHZ NI-780
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von MRF8S18120HSR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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