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BSC079N10NSGATMA1

BSC079N10NSGATMA1
Mfr. #:
BSC079N10NSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC079N10NSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Breite:
5.15 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
BSC079N10NS BSC79N1NSGXT G SP000379590
Tags
BSC079N10NSG, BSC079N1, BSC079, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 7.9 mOhm 66 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 13.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:100A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ark
MOSFET Transistor, N Channel, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
*** Source Electronics
Trans MOSFET N-CH 100V 14.9A Automotive 8-Pin TDSON EP T/R
***ure Electronics
N-Channel 100 V 6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 100V, 90A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 100V, 90A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 100V, 60A, 7.5mΩ
***ark
TAPE REEL/PT5 100V/20V Nch Dual Cool PowerTrench MOSFET.
***nell
MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***roFlash
Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 48-WFQFN Exposed Pad 34 32K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 512KB FLASH 48HWQFN
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***ure Electronics
Single N-Channel 100 V 10 mOhm 44 nC OptiMOS™ Power Mosfet - TDSON-8
***ow.cn
BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 64A, 7.2mΩ
***r Electronics
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 120 V 64 A 7.2 mOhm PowerTrench Mosfet - Power-56
***ark
PT5 120/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
***ment14 APAC
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:120V; On Resistance
***el Electronic
Embedded - Microcontrollers 1 (Unlimited) 20-LSSOP (0.173, 4.40mm Width) 13 384 x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tube 16-Bit MCU 16-bit R8C CISC 4KB Flash 3.3V/5V 20-Pin LSSOP Tube
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ark
MOSFET Transistor, N Channel, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
***ure Electronics
Single N-Channel 80 V 11 mOhm 56 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:80V; On Resistance
***nell
MOSFET, N CH, 80V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 114W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***emi
N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ
***ure Electronics
Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:50A
Teil # Mfg. Beschreibung Aktie Preis
BSC079N10NSGATMA1
DISTI # BSC079N10NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.1780
BSC079N10NSGATMA1
DISTI # BSC079N10NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
  • 1000:$1.3534
  • 500:$1.6334
  • 100:$2.1001
  • 10:$2.6130
  • 1:$2.8900
BSC079N10NSGATMA1
DISTI # BSC079N10NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
  • 1000:$1.3534
  • 500:$1.6334
  • 100:$2.1001
  • 10:$2.6130
  • 1:$2.8900
BSC079N10NSGXT
DISTI # BSC079N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.9489
  • 10000:$0.9149
  • 20000:$0.8819
  • 30000:$0.8519
  • 50000:$0.8369
BSC079N10NS G
DISTI # 726-BSC079N10NSG		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		4020
  • 1:$2.4300
  • 10:$2.0600
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.2000
Bild Teil # Beschreibung
BSC079N10NSGATMA1

Mfr.#: BSC079N10NSGATMA1

OMO.#: OMO-BSC079N10NSGATMA1

 MOSFET MV POWER MOS
BSC079N10NSGXT

Mfr.#: BSC079N10NSGXT

OMO.#: OMO-BSC079N10NSGXT-1190

 Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1)
BSC079N10NS

Mfr.#: BSC079N10NS

OMO.#: OMO-BSC079N10NS-1190

 Neu und Original
BSC079N10NS3G

Mfr.#: BSC079N10NS3G

OMO.#: OMO-BSC079N10NS3G-1190

 Neu und Original
BSC079N10NSG

Mfr.#: BSC079N10NSG

OMO.#: OMO-BSC079N10NSG-1190

 100V,100A,N Channel Power MOSFET
BSC079N10NSGATMA1

Mfr.#: BSC079N10NSGATMA1

OMO.#: OMO-BSC079N10NSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 100A TDSON-8
BSC079N10NSGS

Mfr.#: BSC079N10NSGS

OMO.#: OMO-BSC079N10NSGS-1190

 Neu und Original
BSC079N10NS G

Mfr.#: BSC079N10NS G

OMO.#: OMO-BSC079N10NS-G-128

 MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von BSC079N10NSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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