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IPL65R650C6SATMA1

IPL65R650C6SATMA1
Mfr. #:
IPL65R650C6SATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 6.7A ThinPAK 5x6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPL65R650C6SATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPL65R650C6SATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
ThinPAK-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
6.7 A
Rds On - Drain-Source-Widerstand:
650 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
21 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
56.8 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
CoolMOS C6
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Infineon-Technologien
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
IPL65R650C6S SP001163082
Gewichtseinheit:
0.002677 oz
Tags
IPL65R6, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 6.7A 8-Pin Thin-PAK EP T/R
***et
Trans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R
***ineon SCT
The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
*** Source Electronics
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / 650V CoolMOS C6 Power Transistor
*** Stop Electro
Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS™ Power Mosfet - TO-252-3
***roFlash
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,7.3A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Power Dissipation Pd:63W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ark
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) DPAK
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
N-Channel 600 V 650 mOhm 12 nC CoolMOS™ P6 Power Transistor - ThinPAK 5x6
***ark
Mosfet, N-Ch, 600V, 6.7A, Tson; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.59Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes |Infineon IPL60R650P6SATMA1
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
*** Electronics
STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***ark
MOSFET, N-CH, 650V, 7A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in DPAK package
***ark
MOSFET, N CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; On Resistance Rds(on):0.56ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPL65R650C6SATMA1
DISTI # IPL65R650C6SATMA1-ND		Infineon Technologies AGMOSFET N-CH 8TSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6806
IPL65R650C6SATMA1
DISTI # IPL65R650C6SATMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R - Tape and Reel (Alt: IPL65R650C6SATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.6189
  • 30000:$0.6299
  • 20000:$0.6519
  • 10000:$0.6759
  • 5000:$0.7019
IPL65R650C6SATMA1
DISTI # SP001163082		Infineon Technologies AGTrans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R (Alt: SP001163082)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.5789
  • 30000:€0.6239
  • 20000:€0.6759
  • 10000:€0.7379
  • 5000:€0.9019
IPL65R650C6SATMA1
DISTI # 726-IPL65R650C6SATMA		Infineon Technologies AGMOSFET N-Ch 650V 6.7A ThinPAK 5x6
RoHS: Compliant		2480
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.9270
  • 1000:$0.7320
  • 5000:$0.6490
  • 10000:$0.6240
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OMO.#: OMO-551SDCGI8

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FERD20U50DJF-TR

Mfr.#: FERD20U50DJF-TR

OMO.#: OMO-FERD20U50DJF-TR

 Rectifiers Field Effect Rectifier
IPL65R1K5C6SATMA1

Mfr.#: IPL65R1K5C6SATMA1

OMO.#: OMO-IPL65R1K5C6SATMA1

 MOSFET N-Ch 650V 3A ThinPAK 5x6
SPD04N60C3ATMA1

Mfr.#: SPD04N60C3ATMA1

OMO.#: OMO-SPD04N60C3ATMA1

 MOSFET LOW POWER_LEGACY
WSL1206R2000FEA18

Mfr.#: WSL1206R2000FEA18

OMO.#: OMO-WSL1206R2000FEA18

 Current Sense Resistors - SMD 1/2watt .2ohms 1%
IHLP1616BZER4R7M11

Mfr.#: IHLP1616BZER4R7M11

OMO.#: OMO-IHLP1616BZER4R7M11-VISHAY-DALE

 Fixed Inductors 4.7uH 20%
IHLP2020BZER4R7M11

Mfr.#: IHLP2020BZER4R7M11

OMO.#: OMO-IHLP2020BZER4R7M11-VISHAY-DALE

 Fixed Inductors 4.7uH 20%
551SDCGI8

Mfr.#: 551SDCGI8

OMO.#: OMO-551SDCGI8-INTEGRATED-DEVICE-TECH

 Clock Buffer Low Skew 1 to 4 50fs 50ps 200 MHz
SPD04N60C3ATMA1

Mfr.#: SPD04N60C3ATMA1

OMO.#: OMO-SPD04N60C3ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 4.5A TO252-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IPL65R650C6SATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,60 $
1,60 $
10
1,36 $
13,60 $
100
1,04 $
104,00 $
500
0,93 $
463,50 $
1000
0,73 $
732,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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