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IXYH40N65C3H1

IXYH40N65C3H1
Mfr. #:
IXYH40N65C3H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/80A XPT Copacked TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYH40N65C3H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXYH40N65C3H1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
GenX3, XPT
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247 (IXYH)
Aufbau
Single
Leistung max
300W
Reverse-Recovery-Time-trr
120ns
Strom-Kollektor-Ic-Max
80A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
180A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 40A
Schaltenergie
860μJ (on), 400μJ (off)
Gate-Gebühr
70nC
Td-ein-aus-25°C
26ns/106ns
Testbedingung
400V, 30A, 10 Ohm, 15V
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.85 V
Kontinuierlicher Kollektorstrom-bei-25-C
80 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
30 V
Kontinuierlicher Kollektor-Strom-Ic-Max
80 A
Tags
IXYH40N65C, IXYH40N6, IXYH4, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 RoHS Compliant: Yes
***i-Key
IGBT 650V 80A 300W TO247
***nell
IGBT, SINGLE, 650V, 40A, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXYH40N65C3H1
DISTI # IXYH40N65C3H1-ND		IXYS CorporationIGBT 650V 80A 300W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.0917
IXYH40N65C3H1
DISTI # 747-IXYH40N65C3H1		IXYS CorporationIGBT Transistors 650V/80A XPT Copacked TO-247
RoHS: Compliant		328
  • 1:$7.4300
  • 10:$6.6900
  • 25:$6.0900
  • 50:$5.5700
  • 100:$5.5000
  • 250:$5.0100
  • 500:$4.6100
  • 1000:$4.0100
IXYH40N65C3H1
DISTI # 2470019		IXYS CorporationIGBT, SINGLE, 650V, 40A, TO-247
RoHS: Compliant		6
  • 1:$11.7600
  • 10:$10.5900
  • 25:$9.6400
  • 50:$8.8100
  • 100:$8.7100
  • 250:$7.9300
  • 500:$7.3000
  • 1000:$6.3500
IXYH40N65C3H1
DISTI # 2470019		IXYS CorporationIGBT, SINGLE, 650V, 40A, TO-247
RoHS: Compliant		9
  • 1:£7.6900
  • 5:£7.0300
  • 10:£5.7600
Bild Teil # Beschreibung
IXYH40N90C3D1

Mfr.#: IXYH40N90C3D1

OMO.#: OMO-IXYH40N90C3D1

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Mfr.#: IXYH40N65C3H1

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IXYH40N90C3

Mfr.#: IXYH40N90C3

OMO.#: OMO-IXYH40N90C3

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IXYH40N120B3

Mfr.#: IXYH40N120B3

OMO.#: OMO-IXYH40N120B3

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IXYH40N65B3D1

Mfr.#: IXYH40N65B3D1

OMO.#: OMO-IXYH40N65B3D1

 IGBT Transistors DISC IGBT XPT-GENX3
IXYH40N65B3D1

Mfr.#: IXYH40N65B3D1

OMO.#: OMO-IXYH40N65B3D1-IXYS-CORPORATION

 IGBT
IXYH40N65C3D1

Mfr.#: IXYH40N65C3D1

OMO.#: OMO-IXYH40N65C3D1-IXYS-CORPORATION

 IGBT 650V 80A 300W TO247
IXYH40N120C3

Mfr.#: IXYH40N120C3

OMO.#: OMO-IXYH40N120C3-IXYS-CORPORATION

 IGBT Transistors GenX3 1200V XPT IGBT
IXYH40N65C3H1

Mfr.#: IXYH40N65C3H1

OMO.#: OMO-IXYH40N65C3H1-IXYS-CORPORATION

 IGBT Transistors 650V/80A XPT Copacked TO-247
IXYH40N65C3

Mfr.#: IXYH40N65C3

OMO.#: OMO-IXYH40N65C3-IXYS-CORPORATION

 IGBT Transistors 650V/80A XPT C3-Class TO-247
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IXYH40N65C3H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,02 $
6,02 $
10
5,71 $
57,14 $
100
5,41 $
541,35 $
500
5,11 $
2 556,40 $
1000
4,81 $
4 812,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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