SI1034X-T1-GE3

Mfr. #:: SI1034X-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET 2N-CH 20V 0.18A SC89-6
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1034X-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: IC-Chips

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI1034X-GE3

Gewichtseinheit: 0.001129 oz

Montageart: SMD/SMT

Handelsname: TrenchFET

Paket-Koffer: SOT-563, SOT-666

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: SC-89-6

Aufbau: Dual

FET-Typ: 2 N-Channel (Dual)

Leistung max: 250mW

Transistor-Typ: 2 N-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 180mA

Rds-On-Max-Id-Vgs: 5 Ohm @ 200mA, 4.5V

Vgs-th-Max-Id: 1.2V @ 250μA

Gate-Lade-Qg-Vgs: 0.75nC @ 4.5V

Pd-Verlustleistung: 250 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 25 ns

Anstiegszeit: 25 ns

Vgs-Gate-Source-Spannung: 5 V

ID-Dauer-Drain-Strom: 380 mA

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Widerstand: 5 Ohms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 50 ns

Typische-Einschaltverzögerungszeit: 50 ns

Kanal-Modus: Erweiterung

Tags: SI1034, SI103, SI10, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1034X-T1-GE3 Beschreibung

***ure Electronics: Single N-Channel 20 V 10 Ohm Surface Mount Power MosFet - SC-89-6

***p One Stop Global: Trans MOSFET N-CH 20V 0.18A 6-Pin SOT-563F T/R

***ical: Trans MOSFET N-CH 20V 0.18A 6-Pin SC-89 T/R

***nell: N CHANNEL, MOSFET, 20V, 200mA, SC-89

***i-Key: MOSFET 2N-CH 20V 0.18A SC89-6

***: 20V, [email protected], DUAL

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:200Ma; Drain Source Voltage Vds:20V; On Resistance Rds(On):10Ohm; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:250Mw; No. Of Pins:3Pins Rohs Compliant: No

***ment14 APAC: N CHANNEL, MOSFET, 20V, 200mA, SC-89; Tr; N CHANNEL, MOSFET, 20V, 200mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.2V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1034X-T1-GE3 DISTI # V72:2272_07431893	Vishay Intertechnologies	Trans MOSFET N-CH 20V 0.18A 6-Pin SC-89 T/R RoHS: Compliant	308	250:$0.2395 100:$0.2661 25:$0.3851 10:$0.3925 1:$0.5085
SI1034X-T1-GE3 DISTI # V36:1790_07431893	Vishay Intertechnologies	Trans MOSFET N-CH 20V 0.18A 6-Pin SC-89 T/R RoHS: Compliant	0	300000:$0.1398 3000:$0.1449
SI1034X-T1-GE3 DISTI # SI1034X-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 0.18A SC89-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19117In Stock	1000:$0.1839 500:$0.2379 100:$0.3028 10:$0.4060 1:$0.4700
SI1034X-T1-GE3 DISTI # SI1034X-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 0.18A SC89-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19117In Stock	1000:$0.1839 500:$0.2379 100:$0.3028 10:$0.4060 1:$0.4700
SI1034X-T1-GE3 DISTI # SI1034X-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 0.18A SC89-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	15000In Stock	75000:$0.1330 30000:$0.1344 15000:$0.1417 6000:$0.1522 3000:$0.1628
SI1034X-T1-GE3 DISTI # 31003537	Vishay Intertechnologies	Trans MOSFET N-CH 20V 0.18A 6-Pin SC-89 T/R RoHS: Compliant	308	250:$0.2575 100:$0.2861 51:$0.4140
SI1034X-T1-GE3 DISTI # SI1034X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 0.18A 6-Pin SOT-563F T/R (Alt: SI1034X-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.0427 75000:$0.0434 30000:$0.0441 15000:$0.0457 9000:$0.0474 6000:$0.0492 3000:$0.0512
SI1034X-T1-GE3 DISTI # SI1034X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 0.18A 6-Pin SOT-563F T/R - Tape and Reel (Alt: SI1034X-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1282 18000:$0.1318 12000:$0.1355 6000:$0.1412 3000:$0.1456
SI1034X-T1-GE3 DISTI # 16P3683	Vishay Intertechnologies	N CHANNEL, MOSFET, 20V, 200mA, SC-89,Transistor Polarity:N Channel,Continuous Drain Current Id:200mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):10ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$0.1730 500:$0.2230 250:$0.2470 100:$0.2720 50:$0.3190 25:$0.3660 1:$0.4750
SI1034X-T1-GE3. DISTI # 16AC0249	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:200mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):10ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:250mW,No. of Pins:3Pins RoHS Compliant: No	0	30000:$0.1290 18000:$0.1320 12000:$0.1360 6000:$0.1420 1:$0.1460
SI1034X-T1-GE3 DISTI # 781-SI1034X-T1-GE3	Vishay Intertechnologies	MOSFET Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V RoHS: Compliant	23763	1:$0.4700 10:$0.3610 100:$0.2680 500:$0.2200 1000:$0.1700 3000:$0.1540 6000:$0.1440 9000:$0.1350
SI1034X-T1-GE3	Vishay Intertechnologies		57250
SI1034X-T1-GE3	Vishay Intertechnologies		42000
SI1034X-T1-GE3	Vishay Siliconix	180 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	15	16:$0.2550 1:$0.3400
SI1034XT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 0.18A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	6000
SI1034X-T1-GE3	SLX	INSTOCK	210
SI1034X-T1-GE3	Vishay Intertechnologies	INSTOCK	210
SI1034X-T1-GE3	Vishay Intertechnologies	MOSFET Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V RoHS: Compliant	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI1034X-T1-GE3 OMO.#: OMO-SI1034X-T1-GE3	MOSFET Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V
	Mfr.#: SI1034X-T1-E3 OMO.#: OMO-SI1034X-T1-E3	MOSFET RECOMMENDED ALT 781-SI1034X-T1-GE3
	Mfr.#: SI1034X-T1-E3 OMO.#: OMO-SI1034X-T1-E3-VISHAY	MOSFET 2N-CH 20V 0.18A SOT563F
	Mfr.#: SI1034X-T1-GE3 OMO.#: OMO-SI1034X-T1-GE3-VISHAY	MOSFET 2N-CH 20V 0.18A SC89-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von SI1034X-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,06 $~~; ~~0,06 $~~

10: ~~0,06 $~~; ~~0,61 $~~

100: ~~0,06 $~~; ~~5,76 $~~

500: ~~0,05 $~~; ~~27,20 $~~

1000: ~~0,05 $~~; ~~51,20 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI1034 7
SI103 73
SI10 423
SI1 1080

SI1034X-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes